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Mostrati risultati da 2 a 21 di 40
Titolo Data di pubblicazione Autore(i) File
Application and benefits of target programming algorithms for ferroelectric HfO2transistors 1-gen-2020 Zhou, H.; Ocker, J.; Padovani, A.; Pesic, M.; Trentzsch, M.; Dunkel, S.; Mulaosmanovic, H.; Slesazeck, S.; Larcher, L.; Beyer, S.; Muller, S.; Mikolajick, T.
Breakdown in the metal/high-k gate stack: Identifying the “weak link” in the multilayer dielectric 1-gen-2008 G., Bersuker; D., Heh; C., Young; H., Park; P., Khanal; Larcher, Luca; Padovani, Andrea; P., Lenahan; J., Ryan; B. H., Lee; H., Tseng; R., Jammy
Characterization and modelling of low-frequency noise in PCM devices 1-gen-2008 P., Fantini; G., Betti Beneventi; A., Calderoni; Larcher, Luca; Pavan, Paolo; F., Pellizzer
CMOS and Interconnect Reliability - Flash Reliability/Hot Carrier Effects 1-gen-2003 Pavan, P.; Owens, A.
Coexistence of volatile and non-volatile resistive switching in 2D h-BN based electronic synapses 1-gen-2018 Shi, Y.; Pan, C.; Chen, V.; Raghavan, N.; Pey, K. L.; Puglisi, F. M.; Pop, E.; Wong, H. -S. P.; Lanza, M.
Comprehensive physical modeling of forming and switching operations in HfO2 RRAM devices 1-gen-2011 Vandelli, Luca; Padovani, Andrea; Larcher, Luca; G., Broglia; G., Ori; Montorsi, Monia; G., Bersuker; Pavan, Paolo
Connecting the physical and electrical properties of Hafnia-based RRAM 1-gen-2013 B., Butcher; G., Bersuker; D., Gilmer; P., Kirsch; Larcher, Luca; Padovani, Andrea; Vandelli, Luca; R., Geer; P. D., Kirsch
Correlation between DC and rf degradation due to deep levels in AlGaN/GaN HEMTs 1-gen-2009 Chini, Alessandro; Fantini, Fausto; DI LECCE, Valerio; Esposto, Michele; Stocco, A.; Ronchi, N.; Zanon, F.; Meneghesso, G.; Zanoni, E.
Deconvoluting charge trapping and nucleation interplay in FeFETs: Kinetics and Reliability 1-gen-2019 Pesic, M.; Padovani, A.; Slcsazeck, S.; Mikolajick, T.; Larcher, L.
Demonstration of Improved Transient Response of Inverters with Steep Slope Strained Si NW TFETs by Reduction of TAT with Pulsed I-V and NW Scaling 1-gen-2013 L., Knoll; Q. T., Zhao; A., Nichau; S., Richter; G. V., Luong; S., Trellenkamp; A., Schäfer; Selmi, Luca; K. K., Bourdelle; S., Mantl
Design and Optimization of β-Ga 2 O 3 on (h-BN layered) Sapphire for High Efficiency Power Transistors: A Device-Circuit-Package Perspective 1-gen-2018 Mahajan, B. K.; Chen, Y. -P.; Ahn, W.; Zagni, N.; Alam, M. A.
Electroluminescence analysis of time-dependent reverse-bias degradation of HEMTs: A complete model 1-gen-2011 M., Meneghini; A., Stocco; M., Bertin; N., Ronchi; Chini, Alessandro; D., Marcon; G., Meneghesso; E., Zanoni
Experimental and physics-based modeling assessment of strain induced mobility enhancement in FinFETs 1-gen-2009 Serra, N; Conzatti, F; Esseni, David; DE MICHIELIS, M; Palestri, Pierpaolo; Selmi, Luca; Thomas, S; WHALL T., E; PARKER E. H., C; LEADLEY D., R; Witters, L; Hikavyy, A; HYTCH M., J; Houdellier, F; Snoeck, E; WANG T., J; LEE W., C; Vellianitis, G; VAN DAL M. J., H; Duriez, B; Doornbos, G; Lander, R. J. P.
An Experimental Study of Low Field Electron Mobility in Double-Gate, Ultra-Thin SOI MOSFETs 1-gen-2001 Esseni, David; M., Mastrapasqua; C., Fiegna; G. K., Celler; Selmi, Luca; Sangiorgi, Enrico
Flexible CMOS electronics based on p-type Ge2Sb2Te5 and n-type InGaZnO4 semiconductors 1-gen-2018 Daus, A.; Han, S.; Knobelspies, S.; Cantarella, G.; Vogt, C.; Munzenrieder, N.; Troster, G.
Integration of solution-processed (7,5) SWCNTs with sputtered and spray-coated metal oxides for flexible complementary inverters 1-gen-2015 Petti, L; Bottacchi, F; Münzenrieder, N; Faber, H; Cantarella, G; Vogt, C; Büthe, L; Namal, I; Späth, F; Hertel, T; Anthopoulos, T; Tröster, G
Investigating the Statistical-Physical Nature of MgO Dielectric Breakdown in STT-MRAM at Different Operating Conditions 1-gen-2019 Lim, J. H.; Raghavan, N.; Padovani, A.; Kwon, J. H.; Yamane, K.; Yang, H.; Naik, V. B.; Larcher, L.; Lee, K. H.; Pey, K. L.
Investigation of the role of H-related defects in Al2O3 blocking layer on charge-trap memory retention by atomistic simulations and device physical modelling 1-gen-2010 Molas, G.; Masoero, L.; Blaise, P.; Padovani, A.; Colonna, J. P.; Vianello, E.; Bocquet, M.; Nowak, E.; Gasulla, M.; Cueto, O.; Grampeix, H.; Martin, F.; Kies, R.; Brianceau, P.; Gely, M.; Papon, A. M.; Lafond, D.; Barnes, J. P.; Licitra, C.; Ghibaudo, G.; Larcher, L.; Deleonibus, S.; De Salvo, B.
Low-Field Mobility and High-Field Drift Velocity in Graphene Nanoribbons and Graphene Bilayers 1-gen-2010 Bresciani, Marco; Paussa, Alan; Palestri, Pierpaolo; Esseni, David; Selmi, Luca
Metal oxide RRAM switching mechanism based on conductive filament microscopic properties 1-gen-2010 G., Bersuker; D. C., Gilmer; D., Veksler; J., Yum; H., Park; S., Lian; Vandelli, Luca; Padovani, Andrea; Larcher, Luca; K., Mckenna; A., Shluger; V., Iglesias; M., Porti; M., Nafría; W., Taylor; P. D., Kirsch; R., Jammy
Mostrati risultati da 2 a 21 di 40
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