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SiGe bipolar technologies for low phase noise RF and microwave applications (invited) 1-gen-2000 Regis, M.; Borgarino, M.; Bary, L.; Llopis, O.; Graffeuil, J.; Gruhle, A.; Kovacic, S.; Plana, R.
SiGe technologies for the new information society 1-gen-2000 Regis, M.; Bary, L.; Coustou, A.; Sadowy, J.; Tournier, E.; Borgarino, M.; Llopis, O.; Grafeuil, J.; Plana, R.
Excess noise modelling of SiGe BicMOS devices 1-gen-2000 Ibarra, J.; Vescovi, D.; Bary, L.; Borgarino, M.; Kovacic, S.; Lafontaine, H.; Graffeuil, J.; Plana, R.
Low frequency noise behavior of SiGe BICMOS HBT and their related phase noise performances 1-gen-2000 Regis, M.; Flotats, E.; Borgarino, M.; Kovacic, S.; Lafontaine, H.; Llopis, O.; Tournier, E.; Bary, L.; Plana, R.
SiGe bipolar technologies for low phase noise RF and microwave applications 1-gen-2000 Regis, M.; Borgarino, M.; Bary, L.; Llopis, O.; Graffeuil, J.; Gruhle, A.; Kovacic, S.; Plana, R.
Hot carrier effects on the correlation resistance in Si/SiGe heterojunction bipolar transistors 1-gen-2000 Borgarino, M.; Bary, L.; Kuchenbecker, J.; Tartarin, J. G.; Lafontaine, H.; Kovacic, T.; Plana, R.; Graffeuil, J.; Fantini, F.
On the effects of hot carriers on the RF characteristics of Si/SiGe heterojunction bipolar transistors 1-gen-2000 Borgarino, Mattia; J. G., Tartarin; J., Kuchenbecker; T., Parra; H., Lafontaine; H., Kovacic; R., Plana; J., Graffeuil
Comprehensive experimental and numerical assessment of hot electron reliability of power HFETs 1-gen-2001 R., Menozzi; G., Sozzi; Verzellesi, Giovanni; Borgarino, Mattia; Canali, Claudio; C., Lanzieri
The low frequency noise in electron devices: an engineering sight 1-gen-2001 Borgarino, Mattia; Fantini, Fausto
Hot Carrier Effects in Si/SiGe HBT's 1-gen-2001 Borgarino, Mattia; J., Kuchenbecker; Jg, Tartarin; L., Bary; T., Kovacic; R., Plana; Fantini, Fausto; J., Graffeuil
Failure mechanisms in compound semiconductor electron devices 1-gen-2001 Fantini, Fausto; R., Menozzi; Borgarino, Mattia; L., Cattani; D., Dieci
Reliability investigation in SiGe HBT’s 1-gen-2001 J., Kuchenbecker; Borgarino, Mattia; L., Bary; G., Cibiel; O., Llopis; J. G., Tartarin; J., Graffeuil; S., Kovacic; J. L., Roux; R., Plana
Noise behavior in SiGe devices 1-gen-2001 M., Regis; Borgarino, Mattia; L., Bary; O., Llopis; J., Graffeuil; L., Escotte; U., Koenig; R., Plana
Transimpedance amplifier based full low frequency noise characterization set-up for Si/SiGe HBTs 1-gen-2001 L., Bary; Borgarino, Mattia; R., Plana; T., Parra; S., Kovacic; H., Lafontaine; J., Graffeuil
Impact of gamma irradiation on the RF phase noise capability of UHV/CVD SiGe HBTs 1-gen-2001 G., Niu; J. B., Juraver; Borgarino, Mattia; Z., Jin; J. D., Cressler; R., Plana; O., Llopis; S., Mathew; S., Zhang; S., Clark; A. J., Joseph
Investigation of the Hot-Carrier Degradation in Si/SiGe HBT’s by Intrinsic Low Frequency Noise Source Modeling 1-gen-2001 Borgarino, Mattia; Kuchenbecker, J.; Tartarin, J. C.; Bary, L.; Kovacic, S.; Plana, R.; Menozzi, R.; Fantini, Fausto; Graffeuil, J.
Reliability physics of compound semiconductor transistors for microwave applications 1-gen-2001 Borgarino, Mattia; R., Menozzi; D., Dieci; L., Cattani; Fantini, Fausto
Gate-lag effects in AlGaAs/GaAs power HFET's 1-gen-2001 Borgarino, Mattia; G., Sozzi; Mazzanti, Andrea; Verzellesi, Giovanni
Experimental/numerical investigation of the physical mechanisms behind high-field degradation of power HFETs and their implications on device design 1-gen-2001 R., Menozzi; G., Sozzi; Verzellesi, Giovanni; Borgarino, Mattia; C., Lanzieri; Canali, Claudio
Low Phase Noise, Fully Integrated Monolithic VCO in X Band Based on HBT Technology 1-gen-2001 Z., Ouarch; F., Arlot; Borgarino, Mattia; M., Prigent; L., Bary; M., Camiade
Mostrati risultati da 41 a 60 di 125
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