Sfoglia per Autore
SiGe bipolar technologies for low phase noise RF and microwave applications (invited)
2000 Regis, M.; Borgarino, M.; Bary, L.; Llopis, O.; Graffeuil, J.; Gruhle, A.; Kovacic, S.; Plana, R.
SiGe technologies for the new information society
2000 Regis, M.; Bary, L.; Coustou, A.; Sadowy, J.; Tournier, E.; Borgarino, M.; Llopis, O.; Grafeuil, J.; Plana, R.
Excess noise modelling of SiGe BicMOS devices
2000 Ibarra, J.; Vescovi, D.; Bary, L.; Borgarino, M.; Kovacic, S.; Lafontaine, H.; Graffeuil, J.; Plana, R.
Low frequency noise behavior of SiGe BICMOS HBT and their related phase noise performances
2000 Regis, M.; Flotats, E.; Borgarino, M.; Kovacic, S.; Lafontaine, H.; Llopis, O.; Tournier, E.; Bary, L.; Plana, R.
SiGe bipolar technologies for low phase noise RF and microwave applications
2000 Regis, M.; Borgarino, M.; Bary, L.; Llopis, O.; Graffeuil, J.; Gruhle, A.; Kovacic, S.; Plana, R.
Hot carrier effects on the correlation resistance in Si/SiGe heterojunction bipolar transistors
2000 Borgarino, M.; Bary, L.; Kuchenbecker, J.; Tartarin, J. G.; Lafontaine, H.; Kovacic, T.; Plana, R.; Graffeuil, J.; Fantini, F.
On the effects of hot carriers on the RF characteristics of Si/SiGe heterojunction bipolar transistors
2000 Borgarino, Mattia; J. G., Tartarin; J., Kuchenbecker; T., Parra; H., Lafontaine; H., Kovacic; R., Plana; J., Graffeuil
Comprehensive experimental and numerical assessment of hot electron reliability of power HFETs
2001 R., Menozzi; G., Sozzi; Verzellesi, Giovanni; Borgarino, Mattia; Canali, Claudio; C., Lanzieri
The low frequency noise in electron devices: an engineering sight
2001 Borgarino, Mattia; Fantini, Fausto
Hot Carrier Effects in Si/SiGe HBT's
2001 Borgarino, Mattia; J., Kuchenbecker; Jg, Tartarin; L., Bary; T., Kovacic; R., Plana; Fantini, Fausto; J., Graffeuil
Failure mechanisms in compound semiconductor electron devices
2001 Fantini, Fausto; R., Menozzi; Borgarino, Mattia; L., Cattani; D., Dieci
Reliability investigation in SiGe HBT’s
2001 J., Kuchenbecker; Borgarino, Mattia; L., Bary; G., Cibiel; O., Llopis; J. G., Tartarin; J., Graffeuil; S., Kovacic; J. L., Roux; R., Plana
Noise behavior in SiGe devices
2001 M., Regis; Borgarino, Mattia; L., Bary; O., Llopis; J., Graffeuil; L., Escotte; U., Koenig; R., Plana
Transimpedance amplifier based full low frequency noise characterization set-up for Si/SiGe HBTs
2001 L., Bary; Borgarino, Mattia; R., Plana; T., Parra; S., Kovacic; H., Lafontaine; J., Graffeuil
Impact of gamma irradiation on the RF phase noise capability of UHV/CVD SiGe HBTs
2001 G., Niu; J. B., Juraver; Borgarino, Mattia; Z., Jin; J. D., Cressler; R., Plana; O., Llopis; S., Mathew; S., Zhang; S., Clark; A. J., Joseph
Investigation of the Hot-Carrier Degradation in Si/SiGe HBT’s by Intrinsic Low Frequency Noise Source Modeling
2001 Borgarino, Mattia; Kuchenbecker, J.; Tartarin, J. C.; Bary, L.; Kovacic, S.; Plana, R.; Menozzi, R.; Fantini, Fausto; Graffeuil, J.
Reliability physics of compound semiconductor transistors for microwave applications
2001 Borgarino, Mattia; R., Menozzi; D., Dieci; L., Cattani; Fantini, Fausto
Gate-lag effects in AlGaAs/GaAs power HFET's
2001 Borgarino, Mattia; G., Sozzi; Mazzanti, Andrea; Verzellesi, Giovanni
Experimental/numerical investigation of the physical mechanisms behind high-field degradation of power HFETs and their implications on device design
2001 R., Menozzi; G., Sozzi; Verzellesi, Giovanni; Borgarino, Mattia; C., Lanzieri; Canali, Claudio
Low Phase Noise, Fully Integrated Monolithic VCO in X Band Based on HBT Technology
2001 Z., Ouarch; F., Arlot; Borgarino, Mattia; M., Prigent; L., Bary; M., Camiade
Titolo | Data di pubblicazione | Autore(i) | File |
---|---|---|---|
SiGe bipolar technologies for low phase noise RF and microwave applications (invited) | 1-gen-2000 | Regis, M.; Borgarino, M.; Bary, L.; Llopis, O.; Graffeuil, J.; Gruhle, A.; Kovacic, S.; Plana, R. | |
SiGe technologies for the new information society | 1-gen-2000 | Regis, M.; Bary, L.; Coustou, A.; Sadowy, J.; Tournier, E.; Borgarino, M.; Llopis, O.; Grafeuil, J.; Plana, R. | |
Excess noise modelling of SiGe BicMOS devices | 1-gen-2000 | Ibarra, J.; Vescovi, D.; Bary, L.; Borgarino, M.; Kovacic, S.; Lafontaine, H.; Graffeuil, J.; Plana, R. | |
Low frequency noise behavior of SiGe BICMOS HBT and their related phase noise performances | 1-gen-2000 | Regis, M.; Flotats, E.; Borgarino, M.; Kovacic, S.; Lafontaine, H.; Llopis, O.; Tournier, E.; Bary, L.; Plana, R. | |
SiGe bipolar technologies for low phase noise RF and microwave applications | 1-gen-2000 | Regis, M.; Borgarino, M.; Bary, L.; Llopis, O.; Graffeuil, J.; Gruhle, A.; Kovacic, S.; Plana, R. | |
Hot carrier effects on the correlation resistance in Si/SiGe heterojunction bipolar transistors | 1-gen-2000 | Borgarino, M.; Bary, L.; Kuchenbecker, J.; Tartarin, J. G.; Lafontaine, H.; Kovacic, T.; Plana, R.; Graffeuil, J.; Fantini, F. | |
On the effects of hot carriers on the RF characteristics of Si/SiGe heterojunction bipolar transistors | 1-gen-2000 | Borgarino, Mattia; J. G., Tartarin; J., Kuchenbecker; T., Parra; H., Lafontaine; H., Kovacic; R., Plana; J., Graffeuil | |
Comprehensive experimental and numerical assessment of hot electron reliability of power HFETs | 1-gen-2001 | R., Menozzi; G., Sozzi; Verzellesi, Giovanni; Borgarino, Mattia; Canali, Claudio; C., Lanzieri | |
The low frequency noise in electron devices: an engineering sight | 1-gen-2001 | Borgarino, Mattia; Fantini, Fausto | |
Hot Carrier Effects in Si/SiGe HBT's | 1-gen-2001 | Borgarino, Mattia; J., Kuchenbecker; Jg, Tartarin; L., Bary; T., Kovacic; R., Plana; Fantini, Fausto; J., Graffeuil | |
Failure mechanisms in compound semiconductor electron devices | 1-gen-2001 | Fantini, Fausto; R., Menozzi; Borgarino, Mattia; L., Cattani; D., Dieci | |
Reliability investigation in SiGe HBT’s | 1-gen-2001 | J., Kuchenbecker; Borgarino, Mattia; L., Bary; G., Cibiel; O., Llopis; J. G., Tartarin; J., Graffeuil; S., Kovacic; J. L., Roux; R., Plana | |
Noise behavior in SiGe devices | 1-gen-2001 | M., Regis; Borgarino, Mattia; L., Bary; O., Llopis; J., Graffeuil; L., Escotte; U., Koenig; R., Plana | |
Transimpedance amplifier based full low frequency noise characterization set-up for Si/SiGe HBTs | 1-gen-2001 | L., Bary; Borgarino, Mattia; R., Plana; T., Parra; S., Kovacic; H., Lafontaine; J., Graffeuil | |
Impact of gamma irradiation on the RF phase noise capability of UHV/CVD SiGe HBTs | 1-gen-2001 | G., Niu; J. B., Juraver; Borgarino, Mattia; Z., Jin; J. D., Cressler; R., Plana; O., Llopis; S., Mathew; S., Zhang; S., Clark; A. J., Joseph | |
Investigation of the Hot-Carrier Degradation in Si/SiGe HBT’s by Intrinsic Low Frequency Noise Source Modeling | 1-gen-2001 | Borgarino, Mattia; Kuchenbecker, J.; Tartarin, J. C.; Bary, L.; Kovacic, S.; Plana, R.; Menozzi, R.; Fantini, Fausto; Graffeuil, J. | |
Reliability physics of compound semiconductor transistors for microwave applications | 1-gen-2001 | Borgarino, Mattia; R., Menozzi; D., Dieci; L., Cattani; Fantini, Fausto | |
Gate-lag effects in AlGaAs/GaAs power HFET's | 1-gen-2001 | Borgarino, Mattia; G., Sozzi; Mazzanti, Andrea; Verzellesi, Giovanni | |
Experimental/numerical investigation of the physical mechanisms behind high-field degradation of power HFETs and their implications on device design | 1-gen-2001 | R., Menozzi; G., Sozzi; Verzellesi, Giovanni; Borgarino, Mattia; C., Lanzieri; Canali, Claudio | |
Low Phase Noise, Fully Integrated Monolithic VCO in X Band Based on HBT Technology | 1-gen-2001 | Z., Ouarch; F., Arlot; Borgarino, Mattia; M., Prigent; L., Bary; M., Camiade |
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