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Correlation between burn-in effect and emitter orientation in GaInP/GaAs HBTs 1-gen-1998 Borgarino, M.; Plana, R.; Tartarin, J. G.; Graffeuil, J.; Fantini, F.; Delage, S.
Experimental evaluation of the minimum detectable outdiffusion length for AlGaAs/GaAs HBTs 1-gen-1998 Borgarino, Mattia; C., Voltolini; Fantini, Fausto; J., Tasselli; A., Marty
Early Variations of the Base Current in In/C-doped GaInP/GaAs HBT's 1-gen-1998 Borgarino, Mattia; R., Plana; S., Delage; H., Blank; Fantini, Fausto; J., Graffeuil
Pulsed current stress of Berillium doped AlGaAs/GaAs HBTs 1-gen-1998 L., Cattani; Borgarino, Mattia; Fantini, Fausto
Hot electron degradation of the DC and RF characteristics of AlGaAs/InGaAs/GaAs PHEMT’s. 1-gen-1998 Borgarino, Mattia; R., Menozzi; Y., Baeyens; P., Cova; Fantini, Fausto
Propriétés electriques des transistors bipolaires à hétérojonction sur InP pour des applications optoélectroniques monolithiques 1-gen-1999 Borgarino, Mattia; R., Plana; M., Fendler; J. P., Vilcot; F., Mollot; J., Barette; D., Decoster; J., Graffeuil
On the short and long term degradation of GaInP/GaAs heterojunction bipolar transistors 1-gen-1999 Borgarino, Mattia; R., Plana; S., Delage; Fantini, Fausto; J., Graffeuil
Reliability testing of InP HEMT's using electrical stress methods 1-gen-1999 Van Zanden, K. D.; Schreurs, D. M. M. -P.; Menozzi, R.; Borgarino, M.
Reliability issues in compound semiconductor heterojunction devices 1-gen-1999 Fantini, Fausto; Borgarino, Mattia; L., Cattani; P., Cova; R., Menozzi; G., Salviati; C., Canali; G., Meneghesso; E., Zanoni
On the correlation between drain-gate breakdown voltage and hot-electron reliability in InP HEMT's 1-gen-1999 Menozzi, R.; Borgarino, M.; Van Der Zanden, K.; Schreurs, D.
Low Noise Considerations in SiGe BiCMOS Technology for RF Applications 1-gen-1999 Borgarino, Mattia; S., Kovacic; H., Lafontaine; Z. F., Zhou; R., Plana
Influence of surface recombination on the burn-in effect in microwave GaInP/GaAs HBT's 1-gen-1999 Borgarino, Mattia; R., Plana; S. L., Delage; Fantini, Fausto; J., Graffeuil
Investigation of the burn-in effect in microwave GaInP/GaAs HBTs by means of numerical simulations 1-gen-1999 A., Rusani; J., Kuchenbecker; Borgarino, Mattia; R., Plana; J., Graffeuil; M., Vanzi
Noise properties in SiGe BiCMOS devices 1-gen-1999 J. G., Tartarin; R., Plana; Borgarino, Mattia; H., Lafontaine; M., Regis; O., Llopis; S., Kovacic
Hot carriers Effects on the correlation resistance in Si/SiGe Heterojucntion Bipolar Transistors 1-gen-2000 Borgarino, Mattia; L., Bary; J., Kuchenbecker; J. G., Tartarin; H., Lafontaine; S., Kovacic; R., Plana; J., Graffeuil; Fantini, Fausto
SiGe bipolar technologies for low phase noise RF and microwave applications (invited) 1-gen-2000 Regis, M.; Borgarino, M.; Bary, L.; Llopis, O.; Graffeuil, J.; Gruhle, A.; Kovacic, S.; Plana, R.
Low frequency noise behavior of SiGe BICMOS HBT and their related phase noise performances 1-gen-2000 Regis, M.; Flotats, E.; Borgarino, M.; Kovacic, S.; Lafontaine, H.; Llopis, O.; Tournier, E.; Bary, L.; Plana, R.
On the effects of hot carriers on the RF characteristics of Si/SiGe heterojunction bipolar transistors 1-gen-2000 Borgarino, Mattia; J. G., Tartarin; J., Kuchenbecker; T., Parra; H., Lafontaine; H., Kovacic; R., Plana; J., Graffeuil
SiGe technologies for the new information society 1-gen-2000 Regis, M.; Bary, L.; Coustou, A.; Sadowy, J.; Tournier, E.; Borgarino, M.; Llopis, O.; Grafeuil, J.; Plana, R.
Excess noise modelling of SiGe BicMOS devices 1-gen-2000 Ibarra, J.; Vescovi, D.; Bary, L.; Borgarino, M.; Kovacic, S.; Lafontaine, H.; Graffeuil, J.; Plana, R.
Mostrati risultati da 21 a 40 di 125
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