Sfoglia per Autore
Correlation between burn-in effect and emitter orientation in GaInP/GaAs HBTs
1998 Borgarino, M.; Plana, R.; Tartarin, J. G.; Graffeuil, J.; Fantini, F.; Delage, S.
Experimental evaluation of the minimum detectable outdiffusion length for AlGaAs/GaAs HBTs
1998 Borgarino, Mattia; C., Voltolini; Fantini, Fausto; J., Tasselli; A., Marty
Early Variations of the Base Current in In/C-doped GaInP/GaAs HBT's
1998 Borgarino, Mattia; R., Plana; S., Delage; H., Blank; Fantini, Fausto; J., Graffeuil
Pulsed current stress of Berillium doped AlGaAs/GaAs HBTs
1998 L., Cattani; Borgarino, Mattia; Fantini, Fausto
Hot electron degradation of the DC and RF characteristics of AlGaAs/InGaAs/GaAs PHEMT’s.
1998 Borgarino, Mattia; R., Menozzi; Y., Baeyens; P., Cova; Fantini, Fausto
Propriétés electriques des transistors bipolaires à hétérojonction sur InP pour des applications optoélectroniques monolithiques
1999 Borgarino, Mattia; R., Plana; M., Fendler; J. P., Vilcot; F., Mollot; J., Barette; D., Decoster; J., Graffeuil
On the short and long term degradation of GaInP/GaAs heterojunction bipolar transistors
1999 Borgarino, Mattia; R., Plana; S., Delage; Fantini, Fausto; J., Graffeuil
Reliability testing of InP HEMT's using electrical stress methods
1999 Van Zanden, K. D.; Schreurs, D. M. M. -P.; Menozzi, R.; Borgarino, M.
Reliability issues in compound semiconductor heterojunction devices
1999 Fantini, Fausto; Borgarino, Mattia; L., Cattani; P., Cova; R., Menozzi; G., Salviati; C., Canali; G., Meneghesso; E., Zanoni
On the correlation between drain-gate breakdown voltage and hot-electron reliability in InP HEMT's
1999 Menozzi, R.; Borgarino, M.; Van Der Zanden, K.; Schreurs, D.
Low Noise Considerations in SiGe BiCMOS Technology for RF Applications
1999 Borgarino, Mattia; S., Kovacic; H., Lafontaine; Z. F., Zhou; R., Plana
Influence of surface recombination on the burn-in effect in microwave GaInP/GaAs HBT's
1999 Borgarino, Mattia; R., Plana; S. L., Delage; Fantini, Fausto; J., Graffeuil
Investigation of the burn-in effect in microwave GaInP/GaAs HBTs by means of numerical simulations
1999 A., Rusani; J., Kuchenbecker; Borgarino, Mattia; R., Plana; J., Graffeuil; M., Vanzi
Noise properties in SiGe BiCMOS devices
1999 J. G., Tartarin; R., Plana; Borgarino, Mattia; H., Lafontaine; M., Regis; O., Llopis; S., Kovacic
Hot carriers Effects on the correlation resistance in Si/SiGe Heterojucntion Bipolar Transistors
2000 Borgarino, Mattia; L., Bary; J., Kuchenbecker; J. G., Tartarin; H., Lafontaine; S., Kovacic; R., Plana; J., Graffeuil; Fantini, Fausto
SiGe bipolar technologies for low phase noise RF and microwave applications (invited)
2000 Regis, M.; Borgarino, M.; Bary, L.; Llopis, O.; Graffeuil, J.; Gruhle, A.; Kovacic, S.; Plana, R.
Low frequency noise behavior of SiGe BICMOS HBT and their related phase noise performances
2000 Regis, M.; Flotats, E.; Borgarino, M.; Kovacic, S.; Lafontaine, H.; Llopis, O.; Tournier, E.; Bary, L.; Plana, R.
On the effects of hot carriers on the RF characteristics of Si/SiGe heterojunction bipolar transistors
2000 Borgarino, Mattia; J. G., Tartarin; J., Kuchenbecker; T., Parra; H., Lafontaine; H., Kovacic; R., Plana; J., Graffeuil
SiGe technologies for the new information society
2000 Regis, M.; Bary, L.; Coustou, A.; Sadowy, J.; Tournier, E.; Borgarino, M.; Llopis, O.; Grafeuil, J.; Plana, R.
Excess noise modelling of SiGe BicMOS devices
2000 Ibarra, J.; Vescovi, D.; Bary, L.; Borgarino, M.; Kovacic, S.; Lafontaine, H.; Graffeuil, J.; Plana, R.
Titolo | Data di pubblicazione | Autore(i) | File |
---|---|---|---|
Correlation between burn-in effect and emitter orientation in GaInP/GaAs HBTs | 1-gen-1998 | Borgarino, M.; Plana, R.; Tartarin, J. G.; Graffeuil, J.; Fantini, F.; Delage, S. | |
Experimental evaluation of the minimum detectable outdiffusion length for AlGaAs/GaAs HBTs | 1-gen-1998 | Borgarino, Mattia; C., Voltolini; Fantini, Fausto; J., Tasselli; A., Marty | |
Early Variations of the Base Current in In/C-doped GaInP/GaAs HBT's | 1-gen-1998 | Borgarino, Mattia; R., Plana; S., Delage; H., Blank; Fantini, Fausto; J., Graffeuil | |
Pulsed current stress of Berillium doped AlGaAs/GaAs HBTs | 1-gen-1998 | L., Cattani; Borgarino, Mattia; Fantini, Fausto | |
Hot electron degradation of the DC and RF characteristics of AlGaAs/InGaAs/GaAs PHEMT’s. | 1-gen-1998 | Borgarino, Mattia; R., Menozzi; Y., Baeyens; P., Cova; Fantini, Fausto | |
Propriétés electriques des transistors bipolaires à hétérojonction sur InP pour des applications optoélectroniques monolithiques | 1-gen-1999 | Borgarino, Mattia; R., Plana; M., Fendler; J. P., Vilcot; F., Mollot; J., Barette; D., Decoster; J., Graffeuil | |
On the short and long term degradation of GaInP/GaAs heterojunction bipolar transistors | 1-gen-1999 | Borgarino, Mattia; R., Plana; S., Delage; Fantini, Fausto; J., Graffeuil | |
Reliability testing of InP HEMT's using electrical stress methods | 1-gen-1999 | Van Zanden, K. D.; Schreurs, D. M. M. -P.; Menozzi, R.; Borgarino, M. | |
Reliability issues in compound semiconductor heterojunction devices | 1-gen-1999 | Fantini, Fausto; Borgarino, Mattia; L., Cattani; P., Cova; R., Menozzi; G., Salviati; C., Canali; G., Meneghesso; E., Zanoni | |
On the correlation between drain-gate breakdown voltage and hot-electron reliability in InP HEMT's | 1-gen-1999 | Menozzi, R.; Borgarino, M.; Van Der Zanden, K.; Schreurs, D. | |
Low Noise Considerations in SiGe BiCMOS Technology for RF Applications | 1-gen-1999 | Borgarino, Mattia; S., Kovacic; H., Lafontaine; Z. F., Zhou; R., Plana | |
Influence of surface recombination on the burn-in effect in microwave GaInP/GaAs HBT's | 1-gen-1999 | Borgarino, Mattia; R., Plana; S. L., Delage; Fantini, Fausto; J., Graffeuil | |
Investigation of the burn-in effect in microwave GaInP/GaAs HBTs by means of numerical simulations | 1-gen-1999 | A., Rusani; J., Kuchenbecker; Borgarino, Mattia; R., Plana; J., Graffeuil; M., Vanzi | |
Noise properties in SiGe BiCMOS devices | 1-gen-1999 | J. G., Tartarin; R., Plana; Borgarino, Mattia; H., Lafontaine; M., Regis; O., Llopis; S., Kovacic | |
Hot carriers Effects on the correlation resistance in Si/SiGe Heterojucntion Bipolar Transistors | 1-gen-2000 | Borgarino, Mattia; L., Bary; J., Kuchenbecker; J. G., Tartarin; H., Lafontaine; S., Kovacic; R., Plana; J., Graffeuil; Fantini, Fausto | |
SiGe bipolar technologies for low phase noise RF and microwave applications (invited) | 1-gen-2000 | Regis, M.; Borgarino, M.; Bary, L.; Llopis, O.; Graffeuil, J.; Gruhle, A.; Kovacic, S.; Plana, R. | |
Low frequency noise behavior of SiGe BICMOS HBT and their related phase noise performances | 1-gen-2000 | Regis, M.; Flotats, E.; Borgarino, M.; Kovacic, S.; Lafontaine, H.; Llopis, O.; Tournier, E.; Bary, L.; Plana, R. | |
On the effects of hot carriers on the RF characteristics of Si/SiGe heterojunction bipolar transistors | 1-gen-2000 | Borgarino, Mattia; J. G., Tartarin; J., Kuchenbecker; T., Parra; H., Lafontaine; H., Kovacic; R., Plana; J., Graffeuil | |
SiGe technologies for the new information society | 1-gen-2000 | Regis, M.; Bary, L.; Coustou, A.; Sadowy, J.; Tournier, E.; Borgarino, M.; Llopis, O.; Grafeuil, J.; Plana, R. | |
Excess noise modelling of SiGe BicMOS devices | 1-gen-2000 | Ibarra, J.; Vescovi, D.; Bary, L.; Borgarino, M.; Kovacic, S.; Lafontaine, H.; Graffeuil, J.; Plana, R. |
Legenda icone
- file ad accesso aperto
- file disponibili sulla rete interna
- file disponibili agli utenti autorizzati
- file disponibili solo agli amministratori
- file sotto embargo
- nessun file disponibile