By comparing devices with different recess widths, we show that the off-state drain-gate breakdown voltage (BVDG) may give totally misleading indications on the reliability of lattice-matched InP HEMT's under hot-electron (HE) and impact ionization conditions, from both standpoints of gradual and catastrophic degradation. Since the hot-electron degradation effects observed in our HEMT's are quite common, we believe that our results should be considered as a general caveat whenever indications on HE HEMT robustness are inferred from BVDG measurements.
On the correlation between drain-gate breakdown voltage and hot-electron reliability in InP HEMT's / Menozzi, R.; Borgarino, M.; Van Der Zanden, K.; Schreurs, D.. - In: IEEE ELECTRON DEVICE LETTERS. - ISSN 0741-3106. - 20:4(1999), pp. 152-154. [10.1109/55.753750]
On the correlation between drain-gate breakdown voltage and hot-electron reliability in InP HEMT's
Borgarino M.;
1999
Abstract
By comparing devices with different recess widths, we show that the off-state drain-gate breakdown voltage (BVDG) may give totally misleading indications on the reliability of lattice-matched InP HEMT's under hot-electron (HE) and impact ionization conditions, from both standpoints of gradual and catastrophic degradation. Since the hot-electron degradation effects observed in our HEMT's are quite common, we believe that our results should be considered as a general caveat whenever indications on HE HEMT robustness are inferred from BVDG measurements.
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