The burn-in f!ffict has been studied in C and IniC doped GaInPIGaAs HETs jeaturing [OllJ and [011] emitter orientations. The investigation has been carried out by means of DC, and Low Frequency Noise (LFN) (250Hz-100kHz) characterizations. We found that the [011] emitter orientation minimizes the burn-in effect.
Correlation between burn-in effect and emitter orientation in GaInP/GaAs HBTs / Borgarino, M.; Plana, R.; Tartarin, J. G.; Graffeuil, J.; Fantini, F.; Delage, S.. - (1998), pp. 396-399. (Intervento presentato al convegno 28th European Solid-State Device Research Conference, ESSDERC 1998 tenutosi a fra nel 1998).
Correlation between burn-in effect and emitter orientation in GaInP/GaAs HBTs
Borgarino M.;
1998
Abstract
The burn-in f!ffict has been studied in C and IniC doped GaInPIGaAs HETs jeaturing [OllJ and [011] emitter orientations. The investigation has been carried out by means of DC, and Low Frequency Noise (LFN) (250Hz-100kHz) characterizations. We found that the [011] emitter orientation minimizes the burn-in effect.
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