This paper presents an exhaustive characterization of the low frequency noise behavior of SiGe HBT which is used to locate the 1/f noise sources within the device. We demonstrate that 1/f noise sources are present at the emitter base junction, at the collector terminal and at the base and emitter resistance.
Excess noise modelling of SiGe BicMOS devices / Ibarra, J.; Vescovi, D.; Bary, L.; Borgarino, M.; Kovacic, S.; Lafontaine, H.; Graffeuil, J.; Plana, R.. - 1:(2000), pp. 319-322. (Intervento presentato al convegno 2000 International Semiconductor Conference tenutosi a Sinaia, rou nel 2000) [10.1109/SMICND.2000.890245].
Excess noise modelling of SiGe BicMOS devices
Borgarino M.;
2000
Abstract
This paper presents an exhaustive characterization of the low frequency noise behavior of SiGe HBT which is used to locate the 1/f noise sources within the device. We demonstrate that 1/f noise sources are present at the emitter base junction, at the collector terminal and at the base and emitter resistance.
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