This paper deals with low frequency noise investigation in SiGe BiCMOS devices. We found that five 1/f sources are involved. When appropriate design is done 1/f corner noise frequency lower than 1/kHz has been obtained. These results have been validated through 4 GHz oscillator featuring very low phase noise magnitude.
Low frequency noise behavior of SiGe BICMOS HBT and their related phase noise performances / Regis, M.; Flotats, E.; Borgarino, M.; Kovacic, S.; Lafontaine, H.; Llopis, O.; Tournier, E.; Bary, L.; Plana, R.. - (2000), p. 20. (Intervento presentato al convegno 12 Asia-Pacific Microwave Conference tenutosi a Sydney, Australia, nel 2000) [10.1109/APMC.2000.925946].
Low frequency noise behavior of SiGe BICMOS HBT and their related phase noise performances
Borgarino M.;
2000
Abstract
This paper deals with low frequency noise investigation in SiGe BiCMOS devices. We found that five 1/f sources are involved. When appropriate design is done 1/f corner noise frequency lower than 1/kHz has been obtained. These results have been validated through 4 GHz oscillator featuring very low phase noise magnitude.
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