This paper presents an overview of the low frequency noise performances of both 'abrupt' and 'gradual' SiGe HBTs. We demonstrated that when appropriate device is used, 1/f corner noise frequency in the 1 kHz is obtained. We further presented a correlation with phase noise performances which outperform those reported with III-V devices.
SiGe bipolar technologies for low phase noise RF and microwave applications / Regis, M.; Borgarino, M.; Bary, L.; Llopis, O.; Graffeuil, J.; Gruhle, A.; Kovacic, S.; Plana, R.. - 1:(2000), pp. 261-264. (Intervento presentato al convegno 1999 IEEE MTT-S International Microwave Symposium tenutosi a Boston, MA, USA, nel 2000).
SiGe bipolar technologies for low phase noise RF and microwave applications
Borgarino M.;
2000
Abstract
This paper presents an overview of the low frequency noise performances of both 'abrupt' and 'gradual' SiGe HBTs. We demonstrated that when appropriate device is used, 1/f corner noise frequency in the 1 kHz is obtained. We further presented a correlation with phase noise performances which outperform those reported with III-V devices.
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