Sfoglia per Autore
Extraction of DC base parasitic resistance of bipolar transistors based on impact-ionization-induced base current reversal
1993 Verzellesi, Giovanni; R., Turetta; Pavan, Paolo; A., Collini; A., Chantre; A., Marty; Canali, Claudio; E., Zanoni
Electrical characterization and Reliability of double-doped drain MOS transistors compatible with an EEPROM process
1993 Pavan, Paolo; L., Fratin; C., Riva; B., Vajana; E., Zanoni
Explanation of current crowding phenomena induced by impact ionization in advanced Si bipolar transistors by means of electrical measurements and light emission microscopy
1993 Pavan, P.; Vendrame, L.; Bigliardi, S.; Marty, A.; Chantre, A.; Zanoni, E.
HOT-ELECTRON ELECTROLUMINESCENCE IN ALGAAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTOR
1993 Zanoni, E; Vendrame, L; Pavan, Paolo; Manfredi, M; Bigliardi, S; Malik, R; Canali, Claudio
Prediction of impact-ionization-induced snap-back in advanced Si n-p-n BJTs by means of a non-local analytical model for the avalanche multiplication factor
1993 Verzellesi, Giovanni; Baccarani, G.; Canali, Claudio; Pavan, Paolo; Vendrame, L.; Zanoni, E.
Improving reliability and safety of automotive electronics: research activities within the PROMETHEUS project
1993 E., Zanoni; Pavan, Paolo
Extension of impact-ionization multiplication coefficient measurements to high electric fields in advanced Si BJTs
1993 E., Zanoni; Ef, Crabbe; Jmc, Stork; Pavan, Paolo; Verzellesi, Giovanni; L., Vendrame; Canali, Claudio
Measurements of avalanche effects and light emission in advanced Si and SiGe bipolar transistors
1993 Zanoni, E.; Bigliardi, S.; Pavan, P.; Pisoni, P.; Canali, C.
Impact ionization phenomena in AlGaAs/GaAs HBTs
1993 Di Carlo, A.; Lugli, P.; Pavan, P.; Zanoni, E.; Malik, R.
Impact-ionization effects in advanced Si bipolar transistors
1993 Verzellesi, Giovanni; Pavan, Paolo; E., Zanoni; Canali, Claudio
New method for extracting collector series resistance of bipolar transistors
1993 Verzellesi, Giovanni; Turetta, R.; Cappellin, M.; Pavan, Paolo; Chantre, A.; Zanoni, E.
Simulating single event upset error rate in large digital circuits
1994 Pavan, Paolo; E., Minami; R., Tu; P. K., Ko; C., Hu
Simulating Single Event Upset Rate with BERT
1994 Pavan, Paolo; E., Minami; R., Tu; P. K., Ko; C., Hu
A complete radiation reliability software simulator
1994 Pavan, Paolo; R., Tu; E., Minami; G., Lum; P. K., Ko; C., Hu
A physics-based, accurate SPICE model of impact-ionization effects in bipolar transistors
1994 E., Zanoni; A., Dal Fabbro; L., Vendrame; Verzellesi, Giovanni; G., Meneghesso; Pavan, Paolo; A., Chantre
MEASUREMENT OF THE ELECTRON IONIZATION COEFFICIENT AT LOW ELECTRIC-FIELDS IN GAAS-BASED HETEROJUNCTION BIPOLAR-TRANSISTORS
1994 Canali, Claudio; Capasso, F; Malik, R; Neviani, A; Pavan, Paolo; Tedesco, C; Zanoni, E.
Simulating total dose radiation effects on circuit behavior
1994 R., Tu; G., Lum; Pavan, Paolo; P. K., Ko; C., Hu
Light emission microscopy as a tool for studying Si/SiO2 system degradation
1995 Pavan, Paolo; A., Chantre; G., Dal Pos; L., Vendrame; M., Stucchi; A., Neviani; E., Zanoni
Influence of impact-ionization-induced base current reversal on bipolar transistor parameters
1995 L., Vendrame; E., Zabotto; A., Dal Fabbro; A., Zanini; Verzellesi, Giovanni; E., Zanoni; A., Chantre; Pavan, Paolo
SIMULATING RADIATION RELIABILITY WITH BERT
1995 Pavan, Paolo; Tu, R; Minami, E; Lum, G; Ko, Pk; Hu, Cm
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