Emission microscopy can be used as a tool for failure analysis and testing of Integrated Circuits. It can be used successfully to study reliability issues of Si/SiO2 systems. It is possible to locate the defect position on different devices, and to analyze the nature of the defect. Emission microscopy can be used to investigate current flows in semiconductor devices and to analyze the current distributions and its dependence on device layout.

Light emission microscopy as a tool for studying Si/SiO2 system degradation / Pavan, Paolo; A., Chantre; G., Dal Pos; L., Vendrame; M., Stucchi; A., Neviani; E., Zanoni. - STAMPA. - (1995), pp. 1-2. ((Intervento presentato al convegno Seventh ESPRIT Workshop on Dielectrics in Microelectronics tenutosi a Crete, Greece nel 22-24 November 1995.

Light emission microscopy as a tool for studying Si/SiO2 system degradation

PAVAN, Paolo;
1995-01-01

Abstract

Emission microscopy can be used as a tool for failure analysis and testing of Integrated Circuits. It can be used successfully to study reliability issues of Si/SiO2 systems. It is possible to locate the defect position on different devices, and to analyze the nature of the defect. Emission microscopy can be used to investigate current flows in semiconductor devices and to analyze the current distributions and its dependence on device layout.
Seventh ESPRIT Workshop on Dielectrics in Microelectronics
Crete, Greece
22-24 November 1995
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Pavan, Paolo; A., Chantre; G., Dal Pos; L., Vendrame; M., Stucchi; A., Neviani; E., Zanoni
Light emission microscopy as a tool for studying Si/SiO2 system degradation / Pavan, Paolo; A., Chantre; G., Dal Pos; L., Vendrame; M., Stucchi; A., Neviani; E., Zanoni. - STAMPA. - (1995), pp. 1-2. ((Intervento presentato al convegno Seventh ESPRIT Workshop on Dielectrics in Microelectronics tenutosi a Crete, Greece nel 22-24 November 1995.
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11380/738483
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