A new technique for extracting the collector series resistance of bipolar transistors is presented. The method is based on impact-ionisation-induced base current reversal and provides the value which the collector resistance assumes in the forward active region of operation.

New method for extracting collector series resistance of bipolar transistors / Verzellesi, Giovanni; Turetta, R.; Cappellin, M.; Pavan, Paolo; Chantre, A.; Zanoni, E.. - In: ELECTRONICS LETTERS. - ISSN 0013-5194. - STAMPA. - 29:(1993), pp. 931-933.

New method for extracting collector series resistance of bipolar transistors

VERZELLESI, Giovanni;PAVAN, Paolo;
1993

Abstract

A new technique for extracting the collector series resistance of bipolar transistors is presented. The method is based on impact-ionisation-induced base current reversal and provides the value which the collector resistance assumes in the forward active region of operation.
1993
29
931
933
New method for extracting collector series resistance of bipolar transistors / Verzellesi, Giovanni; Turetta, R.; Cappellin, M.; Pavan, Paolo; Chantre, A.; Zanoni, E.. - In: ELECTRONICS LETTERS. - ISSN 0013-5194. - STAMPA. - 29:(1993), pp. 931-933.
Verzellesi, Giovanni; Turetta, R.; Cappellin, M.; Pavan, Paolo; Chantre, A.; Zanoni, E.
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11380/22244
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