This paper describes a simulator which can be used to study the effects on circuit behaviour of two radiation phenomena: Single Event Upset (SEU) and total-dose radiation effects. The core of the device is BERT (BErkeley Reliability Tools), an IC reliability simulator. The SEU simulator uses an established methodology, but a novel choice of sensitive nodes is made, which allows a fast simulation of very large digital circuits. The total-dose simulator predicts circuit behaviour after a user-specified radiation dose using an ordinary circuit simulator, such as SPICE. Simulation results are compared to actual experimental data.
SIMULATING RADIATION RELIABILITY WITH BERT / Pavan, Paolo; Tu, R; Minami, E; Lum, G; Ko, Pk; Hu, Cm. - In: MICROELECTRONICS JOURNAL. - ISSN 0959-8324. - STAMPA. - 26:(1995), pp. 627-633.
SIMULATING RADIATION RELIABILITY WITH BERT
PAVAN, Paolo;
1995
Abstract
This paper describes a simulator which can be used to study the effects on circuit behaviour of two radiation phenomena: Single Event Upset (SEU) and total-dose radiation effects. The core of the device is BERT (BErkeley Reliability Tools), an IC reliability simulator. The SEU simulator uses an established methodology, but a novel choice of sensitive nodes is made, which allows a fast simulation of very large digital circuits. The total-dose simulator predicts circuit behaviour after a user-specified radiation dose using an ordinary circuit simulator, such as SPICE. Simulation results are compared to actual experimental data.
Pubblicazioni consigliate
I metadati presenti in IRIS UNIMORE sono rilasciati con licenza Creative Commons CC0 1.0 Universal, mentre i file delle pubblicazioni sono rilasciati con licenza Attribuzione 4.0 Internazionale (CC BY 4.0), salvo diversa indicazione.
In caso di violazione di copyright, contattare Supporto Iris
