Double-doped drain/source (As-P) n-MOS transistors with gate-drain and gate-source overlapping have been manu- factured within a standard CMOS EEPROM process. Owing to a decrease in the longitudinal electric field, and the enhanced control of the gate on the low doped drain region, both snap-back voltage and hot electron effects are markedly reduced, allowing reliable operation at high drain voltages at the expense of a tolerable increase in drain, source/gate capacitances. Devices have been submitted to a hot electron accelerated test at Va.,= 10 V, Vss = 5 V. The observed degradation seems to be mainly due to acceptor- type interface state creation near the drain junction.

Electrical characterization and Reliability of double-doped drain MOS transistors compatible with an EEPROM process / Pavan, Paolo; L., Fratin; C., Riva; B., Vajana; E., Zanoni. - In: MICROELECTRONICS JOURNAL. - ISSN 0959-8324. - STAMPA. - 24:(1993), pp. 827-839.

Electrical characterization and Reliability of double-doped drain MOS transistors compatible with an EEPROM process

PAVAN, Paolo;
1993-01-01

Abstract

Double-doped drain/source (As-P) n-MOS transistors with gate-drain and gate-source overlapping have been manu- factured within a standard CMOS EEPROM process. Owing to a decrease in the longitudinal electric field, and the enhanced control of the gate on the low doped drain region, both snap-back voltage and hot electron effects are markedly reduced, allowing reliable operation at high drain voltages at the expense of a tolerable increase in drain, source/gate capacitances. Devices have been submitted to a hot electron accelerated test at Va.,= 10 V, Vss = 5 V. The observed degradation seems to be mainly due to acceptor- type interface state creation near the drain junction.
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Electrical characterization and Reliability of double-doped drain MOS transistors compatible with an EEPROM process / Pavan, Paolo; L., Fratin; C., Riva; B., Vajana; E., Zanoni. - In: MICROELECTRONICS JOURNAL. - ISSN 0959-8324. - STAMPA. - 24:(1993), pp. 827-839.
Pavan, Paolo; L., Fratin; C., Riva; B., Vajana; E., Zanoni
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11380/737655
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