Ionization phenomena in AlGaAs/GaAs HBTs are theoretically and experimentally investigated. The measured multiplication factor correlates well to the results of a Monte Carlo simulation of the device, which also provides general microscopic details of the pre-avalanche regime, and evidences the role of dead-space effects.
Impact ionization phenomena in AlGaAs/GaAs HBTs / Di Carlo, A.; Lugli, P.; Pavan, P.; Zanoni, E.; Malik, R.. - (1993), pp. 135-138. ((Intervento presentato al convegno 22nd European Solid State Device Research Conference, ESSDERC 1992 tenutosi a bel nel 1992.
Impact ionization phenomena in AlGaAs/GaAs HBTs
Pavan P.;Zanoni E.;
1993-01-01
Abstract
Ionization phenomena in AlGaAs/GaAs HBTs are theoretically and experimentally investigated. The measured multiplication factor correlates well to the results of a Monte Carlo simulation of the device, which also provides general microscopic details of the pre-avalanche regime, and evidences the role of dead-space effects.
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