Ionization phenomena in AlGaAs/GaAs HBTs are theoretically and experimentally investigated. The measured multiplication factor correlates well to the results of a Monte Carlo simulation of the device, which also provides general microscopic details of the pre-avalanche regime, and evidences the role of dead-space effects.
Impact ionization phenomena in AlGaAs/GaAs HBTs / Di Carlo, A.; Lugli, P.; Pavan, P.; Zanoni, E.; Malik, R.. - (1993), pp. 135-138. (Intervento presentato al convegno 22nd European Solid State Device Research Conference, ESSDERC 1992 tenutosi a bel nel 1992).