ZANONI, Enrico
ZANONI, Enrico
Characterization of CMOS Structures (O.6 urn process) Submitted to HBM and COM ESD Stress Tests
1997 Meneghesso, G.; Zanoni, E.; Colombo, P.; Brambilla, M.; Annunziata, R.; Pavan, P.
Defect-related tunneling contributions to subthreshold forward current in GaN-based LEDs
2015 Mandurrino, M.; Verzellesi, G.; Goano, M.; Dominici, S.; Bertazzi, F.; Ghione, G.; Meneghini, M.; Meneghesso, G.; Zanoni, E.
Experimental and Numerical Analysis of OFFState Bias Induced Instabilities in Vertical GaNon-Si Trench MOSFETs
2024 Zagni, N.; Fregolent, M.; Verzellesi, G.; Bergamin, F.; Favero, D.; De Santi, C.; Meneghesso, G.; Zanoni, E.; Huber, C.; Meneghini, M.; Pavan, P.
Explanation of current crowding phenomena induced by impact ionization in advanced Si bipolar transistors by means of electrical measurements and light emission microscopy
1993 Pavan, P.; Vendrame, L.; Bigliardi, S.; Marty, A.; Chantre, A.; Zanoni, E.
Impact ionization phenomena in AlGaAs/GaAs HBTs
1993 Di Carlo, A.; Lugli, P.; Pavan, P.; Zanoni, E.; Malik, R.
Measurements of avalanche effects and light emission in advanced Si and SiGe bipolar transistors
1993 Zanoni, E.; Bigliardi, S.; Pavan, P.; Pisoni, P.; Canali, C.
Microwave and millimeter-wave GaN HEMTs: impact of epitaxial structure on short-channel effects, electron trapping and reliability
2023 Zanoni, Enrico; Gao, Zhan; Fornasier, Mirko; Saro, Marco; Rampazzo, Fabiana; De Santi, Carlo; Meneghesso, Gaudenzio; Meneghini, Matteo; Cioni, Marcello; Zagni, Nicolo'; Chini, Alessandro; Verzellesi, Giovanni
| Titolo | Data di pubblicazione | Autore(i) | File |
|---|---|---|---|
| Characterization of CMOS Structures (O.6 urn process) Submitted to HBM and COM ESD Stress Tests | 1-gen-1997 | Meneghesso, G.; Zanoni, E.; Colombo, P.; Brambilla, M.; Annunziata, R.; Pavan, P. | |
| Defect-related tunneling contributions to subthreshold forward current in GaN-based LEDs | 1-gen-2015 | Mandurrino, M.; Verzellesi, G.; Goano, M.; Dominici, S.; Bertazzi, F.; Ghione, G.; Meneghini, M.; Meneghesso, G.; Zanoni, E. | |
| Experimental and Numerical Analysis of OFFState Bias Induced Instabilities in Vertical GaNon-Si Trench MOSFETs | 1-gen-2024 | Zagni, N.; Fregolent, M.; Verzellesi, G.; Bergamin, F.; Favero, D.; De Santi, C.; Meneghesso, G.; Zanoni, E.; Huber, C.; Meneghini, M.; Pavan, P. | |
| Explanation of current crowding phenomena induced by impact ionization in advanced Si bipolar transistors by means of electrical measurements and light emission microscopy | 1-gen-1993 | Pavan, P.; Vendrame, L.; Bigliardi, S.; Marty, A.; Chantre, A.; Zanoni, E. | |
| Impact ionization phenomena in AlGaAs/GaAs HBTs | 1-gen-1993 | Di Carlo, A.; Lugli, P.; Pavan, P.; Zanoni, E.; Malik, R. | |
| Measurements of avalanche effects and light emission in advanced Si and SiGe bipolar transistors | 1-gen-1993 | Zanoni, E.; Bigliardi, S.; Pavan, P.; Pisoni, P.; Canali, C. | |
| Microwave and millimeter-wave GaN HEMTs: impact of epitaxial structure on short-channel effects, electron trapping and reliability | 1-gen-2023 | Zanoni, Enrico; Gao, Zhan; Fornasier, Mirko; Saro, Marco; Rampazzo, Fabiana; De Santi, Carlo; Meneghesso, Gaudenzio; Meneghini, Matteo; Cioni, Marcello; Zagni, Nicolo'; Chini, Alessandro; Verzellesi, Giovanni |