A semi-classical model describing electron and hole trap-assisted tunneling (TAT), which accounts for multiphonon and elastic transitions, is presented and tested on different single-quantum-well light-emitting diode (LED) structures. Our numerical and experimental study confirms that TAT constitutes one of the main contributions to the forward current below the LED optical turn-on.
Defect-related tunneling contributions to subthreshold forward current in GaN-based LEDs / Mandurrino, M.; Verzellesi, G.; Goano, M.; Dominici, S.; Bertazzi, F.; Ghione, G.; Meneghini, M.; Meneghesso, G.; Zanoni, E.. - 2015:667(2015), pp. 4 .-4 .. (Intervento presentato al convegno 17th Italian Conference on Photonics Technologies, Fotonica AEIT 2015 tenutosi a ita nel 2015) [10.1049/cp.2015.0136].
Defect-related tunneling contributions to subthreshold forward current in GaN-based LEDs
Verzellesi G.;Zanoni E.
2015
Abstract
A semi-classical model describing electron and hole trap-assisted tunneling (TAT), which accounts for multiphonon and elastic transitions, is presented and tested on different single-quantum-well light-emitting diode (LED) structures. Our numerical and experimental study confirms that TAT constitutes one of the main contributions to the forward current below the LED optical turn-on.
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