Sfoglia per Serie  IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS

Opzioni
Vai a: 0-9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Mostrati risultati da 1 a 20 di 44
Titolo Data di pubblicazione Autore(i) File
A complete study of SILC effects on E2PROM reliability 1-gen-2002 Larcher, L.; Bertulu, S.; Pavan, P.
A microscopic physical description of RTN current fluctuations in HfOx RRAM 1-gen-2015 Puglisi, Francesco Maria; Pavan, Paolo; Vandelli, Luca; Padovani, Andrea; Bertocchi, Matteo; Larcher, Luca
Analysis of interface-trap effects in inversion-type InGaAs/ZrO2 MOSFETs 1-gen-2010 Morassi, Luca; Verzellesi, Giovanni; Padovani, Andrea; Larcher, Luca; Pavan, Paolo; D., Veksler; Injo, Ok; G., Bersuker
Circuit Reliability Analysis of RRAM-based Logic-in-Memory Crossbar Architectures Including Line Parasitic Effects, Variability, and Random Telegraph Noise 1-gen-2020 Zanotti, T.; Puglisi, F. M.; Pavan, P.
Combined variability/sensitivity analysis in III-V and silicon FETs for future technological nodes 1-gen-2017 Zagni, Nicolo'; Puglisi, Francesco Maria; Verzellesi, Giovanni; Pavan, Paolo
Combining Experiments and a Novel Small Signal Model to Investigate the Degradation Mechanisms in Ferroelectric Tunnel Junctions 1-gen-2022 Benatti, L.; Pavan, P.; Puglisi, F. M.
Controlling uniformity of RRAM characteristics through the forming process 1-gen-2012 Kalantarian, A.; Bersuker, G.; Gilmer, D. C.; Veksler, D.; Butcher, B.; Padovani, A.; Pirrotta, O.; Larcher, L.; Geer, R.; Nishi, Y.; Kirsch, P.
Correlation between dynamic Rdson transients and Carbon related buffer traps in AlGaN/GaN HEMTs 1-gen-2016 Iucolano, F.; Parisi, A.; Reina, S.; Patti, A.; Coffa, S.; Meneghesso, G.; Verzellesi, Giovanni; Fantini, Fausto; Chini, Alessandro
Defect density evaluation in a high-k MOSFET gate stack combining experimental and modeling methods 1-gen-2014 Puglisi, Francesco Maria; Veksler, D.; Matthews, K.; Bersuker, G.; Larcher, Luca; Padovani, Andrea; Vandelli, Luca; Pavan, Paolo
Electron-assisted switching in FeFETs: Memory window dynamics - retention - trapping mechanisms and correlation 1-gen-2022 Pesic, M.; Beltrando, B.; Padovani, A.; Miyashita, T.; Kim, N. -S.; Larcher, L.
Experimental and numerical correlation between current-collapse and fe-doping profiles in GaN HEMTs 1-gen-2012 Chini, Alessandro; DI LECCE, Valerio; Soci, Fabio; D., Bisi; A., Stocco; M., Meneghini; G., Meneghesso; E., Zanoni; A., Gasparotto
Fe-Traps Influence on Time-dependent Breakdown Voltage in 0.1-μm GaN HEMTs for 5G Applications 1-gen-2022 Cioni, M.; Zagni, N.; Chini, A.
Hot Carrier Degradation: From Defect Creation Modeling to Their Impact on NMOS Parameters 1-gen-2012 Mamy Randriamihaja, Y; Zaka, A; Huard, V; Rafik, M; Rideau, D; Roy, D; Bravaix, A; Palestri, Pierpaolo
Identification of Interface States responsible for VTHHysteresis in packaged SiC MOSFETs 1-gen-2022 Cioni, M.; Fiorenza, P.; Roccaforte, F.; Saggio, M.; Cascino, S.; Messina, A.; Vinciguerra, V.; Calabretta, M.; Chini, A.
Influence of device self-heating on trap activation energy extraction 1-gen-2013 Soci, Fabio; Chini, Alessandro; Meneghesso, G.; Meneghini, M.; Zanoni, E.
Insights into device and material origins and physical mechanisms behind cross temperature in 3D NAND 1-gen-2023 Pesic, Milan; Beltrando, Bastien; Rollo, Tommaso; Zambelli, Cristian; Padovani, Andrea; Micheloni, Rino; Maji, Rita; Enman, Lisa; Saly, Mark; Bae, Yang Ho; Kim, Jung Bae; Yim, Dong Kil; Larcher, Luca
Instability of HfO2 RRAM devices: Comparing RTN and cycling variability 1-gen-2014 Puglisi, Francesco Maria; Larcher, Luca; Pavan, Paolo; Padovani, Andrea; Bersuker, G.
Investigation of the role of electrodes on the retention performance of HfOx based RRAM cells by experiments, atomistic simulations and device physical modeling 1-gen-2013 B., Traore; K. H., Xue; E., Vianello; G., Molas; Padovani, Andrea; Pirrotta, Onofrio; Larcher, Luca; P., Blaise; L., Fonseca; B., De Salvo; Y., Nishi
Low-Bit Precision Neural Network Architecture with High Immunity to Variability and Random Telegraph Noise based on Resistive Memories 1-gen-2021 Zanotti, Tommaso; Puglisi, Francesco Maria; Pavan, Paolo
New Hot Carrier degradation modeling reconsidering the role of EES in ultra short N-channel MOSFETs 1-gen-2013 Randriamihaja, Y; Federspiel, X; Huard, V; Bravaix, A; Palestri, Pierpaolo
Mostrati risultati da 1 a 20 di 44
Legenda icone

  •  file ad accesso aperto
  •  file disponibili sulla rete interna
  •  file disponibili agli utenti autorizzati
  •  file disponibili solo agli amministratori
  •  file sotto embargo
  •  nessun file disponibile