The proposed constant voltage forming (CVF) is shown to increase the resistances of the low resistance and high resistance states while reducing their variability. By forcing the forming in all devices to occur at the same predefined voltage, the CVF method eliminates a major cause of the device-to-device variation associated with the randomness of the forming voltage values. Moreover, both experiments and simulations show that CVF at lower voltages suppresses the parasitic overshoot current, resulting in a more controlled and smaller filament cross-section and lower operation currents. © 2012 IEEE.

Controlling uniformity of RRAM characteristics through the forming process / Kalantarian, A.; Bersuker, G.; Gilmer, D. C.; Veksler, D.; Butcher, B.; Padovani, A.; Pirrotta, O.; Larcher, L.; Geer, R.; Nishi, Y.; Kirsch, P.. - (2012), pp. 6C.4.5-6C.4.5. (Intervento presentato al convegno 2012 IEEE International Reliability Physics Symposium, IRPS 2012 tenutosi a Anaheim, CA, usa nel 2012) [10.1109/IRPS.2012.6241874].

Controlling uniformity of RRAM characteristics through the forming process

Padovani A.;Pirrotta O.;Larcher L.;
2012

Abstract

The proposed constant voltage forming (CVF) is shown to increase the resistances of the low resistance and high resistance states while reducing their variability. By forcing the forming in all devices to occur at the same predefined voltage, the CVF method eliminates a major cause of the device-to-device variation associated with the randomness of the forming voltage values. Moreover, both experiments and simulations show that CVF at lower voltages suppresses the parasitic overshoot current, resulting in a more controlled and smaller filament cross-section and lower operation currents. © 2012 IEEE.
2012
2012 IEEE International Reliability Physics Symposium, IRPS 2012
Anaheim, CA, usa
2012
6C.4.5
6C.4.5
Kalantarian, A.; Bersuker, G.; Gilmer, D. C.; Veksler, D.; Butcher, B.; Padovani, A.; Pirrotta, O.; Larcher, L.; Geer, R.; Nishi, Y.; Kirsch, P.
Controlling uniformity of RRAM characteristics through the forming process / Kalantarian, A.; Bersuker, G.; Gilmer, D. C.; Veksler, D.; Butcher, B.; Padovani, A.; Pirrotta, O.; Larcher, L.; Geer, R.; Nishi, Y.; Kirsch, P.. - (2012), pp. 6C.4.5-6C.4.5. (Intervento presentato al convegno 2012 IEEE International Reliability Physics Symposium, IRPS 2012 tenutosi a Anaheim, CA, usa nel 2012) [10.1109/IRPS.2012.6241874].
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11380/1249309
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