Hot Carrier induced degradation is modeled using the carrier energy distribution function including Carrier-Carrier Scattering process. Silicon-hydrogen bond breakage through single particle and multiple particles interactions is considered in the modeling of the microscopic defect creation along the channel. Good agreement with lateral profile measurements is obtained for various stress conditions. The impact of the simulated defects distribution along the channel on the electrostatic and mobility (using remote coulomb scattering) is found in line with measurements.
Hot Carrier Degradation: From Defect Creation Modeling to Their Impact on NMOS Parameters / Mamy Randriamihaja, Y; Zaka, A; Huard, V; Rafik, M; Rideau, D; Roy, D; Bravaix, A; Palestri, Pierpaolo. - (2012), pp. XL.15.1-XL.15.4. (Intervento presentato al convegno 2012 IEEE International Reliability Physics Symposium, IRPS 2012 tenutosi a Anaheim, CA, usa nel 2012) [10.1109/IRPS.2012.6241945].
Hot Carrier Degradation: From Defect Creation Modeling to Their Impact on NMOS Parameters
PALESTRI, Pierpaolo
2012
Abstract
Hot Carrier induced degradation is modeled using the carrier energy distribution function including Carrier-Carrier Scattering process. Silicon-hydrogen bond breakage through single particle and multiple particles interactions is considered in the modeling of the microscopic defect creation along the channel. Good agreement with lateral profile measurements is obtained for various stress conditions. The impact of the simulated defects distribution along the channel on the electrostatic and mobility (using remote coulomb scattering) is found in line with measurements.
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