In this paper, we investigate SILC effects on E2PROM reliability: the influence of Program/Erase bias and cycle number, of oxide thickness scaling and quality, and of storage field on retention properties of E2PROM memory cell. To accomplish this task, we use a recently proposed compact E2PROM model, extended to include SILC, thus bridging the gap between oxide quality characterization activity performed on MOS test structures, and its actual impact on E2PROM memories.
A complete study of SILC effects on E2PROM reliability / Larcher, L.; Bertulu, S.; Pavan, P.. - 2002-:(2002), pp. 437-438. (Intervento presentato al convegno 40th Annual IEEE International Reliability Physics Symposium, IRPS 2002 tenutosi a usa nel 2002) [10.1109/RELPHY.2002.996684].
A complete study of SILC effects on E2PROM reliability
Larcher L.;Pavan P.
2002
Abstract
In this paper, we investigate SILC effects on E2PROM reliability: the influence of Program/Erase bias and cycle number, of oxide thickness scaling and quality, and of storage field on retention properties of E2PROM memory cell. To accomplish this task, we use a recently proposed compact E2PROM model, extended to include SILC, thus bridging the gap between oxide quality characterization activity performed on MOS test structures, and its actual impact on E2PROM memories.
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