In this paper, we investigate SILC effects on E2PROM reliability: the influence of Program/Erase bias and cycle number, of oxide thickness scaling and quality, and of storage field on retention properties of E2PROM memory cell. To accomplish this task, we use a recently proposed compact E2PROM model, extended to include SILC, thus bridging the gap between oxide quality characterization activity performed on MOS test structures, and its actual impact on E2PROM memories.

A complete study of SILC effects on E2PROM reliability / Larcher, L.; Bertulu, S.; Pavan, P.. - 2002-:(2002), pp. 437-438. ((Intervento presentato al convegno 40th Annual IEEE International Reliability Physics Symposium, IRPS 2002 tenutosi a usa nel 2002 [10.1109/RELPHY.2002.996684].

A complete study of SILC effects on E2PROM reliability

Larcher L.;Pavan P.
2002-01-01

Abstract

In this paper, we investigate SILC effects on E2PROM reliability: the influence of Program/Erase bias and cycle number, of oxide thickness scaling and quality, and of storage field on retention properties of E2PROM memory cell. To accomplish this task, we use a recently proposed compact E2PROM model, extended to include SILC, thus bridging the gap between oxide quality characterization activity performed on MOS test structures, and its actual impact on E2PROM memories.
40th Annual IEEE International Reliability Physics Symposium, IRPS 2002
usa
2002
2002-
437
438
Larcher, L.; Bertulu, S.; Pavan, P.
A complete study of SILC effects on E2PROM reliability / Larcher, L.; Bertulu, S.; Pavan, P.. - 2002-:(2002), pp. 437-438. ((Intervento presentato al convegno 40th Annual IEEE International Reliability Physics Symposium, IRPS 2002 tenutosi a usa nel 2002 [10.1109/RELPHY.2002.996684].
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11380/1248188
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