Sfoglia per Autore
Investigation of the impact of H-related defects in Al2O3 blocking layer of charge-trap memories by atomistic simulations and device physical modeling
2010 G., Molas; L., Masoero; P., Blaise; Padovani, Andrea; J. P., Colonna; E., Vianello; M., Bocquet; E., Nowak; M., Gasulla; O., Cueto; H., Grampeix; F., Martin; R., Kies; P., Brianceau; M., Gély; A. M., Papon; D., Lafond; J. P., Barnes; C., Licitra; G., Ghibaudo; Larcher, Luca; S., Deleonibus; B., De Salvo
A Micro Fuel Cell Power Supply Module for Low Power Portable Applications
2010 Bertacchini, Alessandro; Scorcioni, Stefano; Cori, Marco Maria; Larcher, Luca; Pavan, Paolo; J. P., Esquivel; N., Torres Herrero; N., Sabaté; J., Santander
Gate Leakage Current Reduction in Two-Step Processed High-k Dielectrics for Low Power Applications
2010 G., Bersuker; D., Heh; J., Huang; C. S., Park; Padovani, Andrea; Larcher, Luca; P., Kirsch; R., Jammy
Modeling Temperature Dependency (6 - 400K) of the Leakage Current Through the SiO2/High-K Stacks
2010 Vandelli, Luca; Padovani, Andrea; Larcher, Luca; G., Bersuker; R. G., Southwick III; W. B., Knowlton
Current status of EUV lithography development in Japan
2010 Larcher, L.
SET switching effects on PCM endurance
2010 V., Della Marca; F., Carboni; Larcher, Luca; Padovani, Andrea; Pavan, Paolo
Charge loss in TANOS devices caused by Vt sensing measurements during retention
2010 H., Park; G., Bersuker; D., Gilmer; K. Y., Lim; M., Jo; H., Hwang; Padovani, Andrea; Larcher, Luca; Pavan, Paolo; W., Taylor; P. D., Kirsch
On Carbon doping to improve GeTe-based Phase-Change Memory data retention at high temperature
2010 G., Betti Beneventi; E., Gourvestzk; A., Fantini; L., Perniola; V., Sousa; S., Maitrejean; J. C., Bastien; A., Bastard; A., Fargeix; B., Hyot; C., Jahan; J. F., Nodin; A., Persico; D., Blachier; A., Toffoli; S., Loubriat; A., Roule; S., Lhostis; H., Feldis; G., Reimbold; T., Billon; B., De Salvo; Larcher, Luca; Pavan, Paolo; D., Bensahel; P., Mazoyer; R., Annunziata; F., Boulanger
Fundamental reliability issues of advanced charge-trapping Flash memory devices
2010 Larcher, Luca; Padovani, Andrea
Experimental assessment of electrons and holes in erase transient of TANOS and TANVaS memories
2010 A., Suhane; A., Arreghini; G., Van den bosch; Vandelli, Luca; Padovani, Andrea; L., Breuil; Larcher, Luca; K., De Meyer; J., Van Houdt
A Physical Model for Post-Breakdown Digital Gate Current Noise
2010 Padovani, Andrea; Morassi, Luca; N., Raghavan; Larcher, Luca; L., Wenhu; K. L., Pey; G., Bersuker
Role of Holes and Electrons During Erase of TANOS Memories: Evidences for Dipole Formation and its Impact on Reliability
2010 Vandelli, Luca; Padovani, Andrea; Larcher, Luca; Antonio, Arreghini; Geert Van den, Bosch; Malgorzata, Jurczak; Jan Van, Houdt; Vincenzo Della, Marca; Pavan, Paolo
Investigation of trapping/detrapping mechanisms in Al2O3 electron/hole traps and their influence on TANOS memory operations
2010 Larcher, Luca; Padovani, Andrea; Vincenzo della, Marca; Pavan, Paolo; Bertacchini, Alessandro
Carbon-doped GeTe Phase-Change Memory featuring remarkable RESET current reduction
2010 G., Betti Beneventi; L., Perniola; A., Fantini; D., Blachier; A., Toffoli; E., Gourvest; S., Maitrejean; V., Sousa; C., Jahan; J. F., Nodin; A., Persico; S., Loubriat; A., Roule; S., Lhostis; H., Feldis; G., Reimbold; T., Billon; B., De Salvo; Larcher, Luca; Pavan, Paolo; D., Bensahel; P., Mazoyer; R., Annunziata; F., Boulanger
Metal oxide RRAM switching mechanism based on conductive filament microscopic properties
2010 G., Bersuker; D. C., Gilmer; D., Veksler; J., Yum; H., Park; S., Lian; Vandelli, Luca; Padovani, Andrea; Larcher, Luca; K., Mckenna; A., Shluger; V., Iglesias; M., Porti; M., Nafría; W., Taylor; P. D., Kirsch; R., Jammy
Millimeter-Wave 14dBm CMOS Power Amplifier with Input-Output Distributed Transformers
2010 A., Pallotta; W., Eyssa; Larcher, Luca; R., Brama
Analysis of interface-trap effects in inversion-type InGaAs/ZrO2 MOSFETs
2010 Morassi, Luca; Verzellesi, Giovanni; Padovani, Andrea; Larcher, Luca; Pavan, Paolo; D., Veksler; Injo, Ok; G., Bersuker
A novel Algorithm for the Solution of Charge Transport Equations in MANOS Devices Including Charge Trapping in Alumina and Temperature Effects
2010 Padovani, Andrea; Larcher, Luca
Leakage Current in TiN/HfO2/TiN MIM Capacitors and Degradation due to Electrical Stress
2010 S., Cimino; Padovani, Andrea; Larcher, Luca; V. V., Afanas’Ev; H. J., Hwang; Y. G., Lee; M., Jurczac; D., Wouters; B. H., Lee; H., Hwang; L., Pantisano
Temperature Effects on Metal-Alumina-Nitride-Oxide-Silicon Memory Operations
2010 Padovani, Andrea; Larcher, Luca; D., Heh; G., Bersuker; V., Dellamarca; Pavan, Paolo
Titolo | Data di pubblicazione | Autore(i) | File |
---|---|---|---|
Investigation of the impact of H-related defects in Al2O3 blocking layer of charge-trap memories by atomistic simulations and device physical modeling | 1-gen-2010 | G., Molas; L., Masoero; P., Blaise; Padovani, Andrea; J. P., Colonna; E., Vianello; M., Bocquet; E., Nowak; M., Gasulla; O., Cueto; H., Grampeix; F., Martin; R., Kies; P., Brianceau; M., Gély; A. M., Papon; D., Lafond; J. P., Barnes; C., Licitra; G., Ghibaudo; Larcher, Luca; S., Deleonibus; B., De Salvo | |
A Micro Fuel Cell Power Supply Module for Low Power Portable Applications | 1-gen-2010 | Bertacchini, Alessandro; Scorcioni, Stefano; Cori, Marco Maria; Larcher, Luca; Pavan, Paolo; J. P., Esquivel; N., Torres Herrero; N., Sabaté; J., Santander | |
Gate Leakage Current Reduction in Two-Step Processed High-k Dielectrics for Low Power Applications | 1-gen-2010 | G., Bersuker; D., Heh; J., Huang; C. S., Park; Padovani, Andrea; Larcher, Luca; P., Kirsch; R., Jammy | |
Modeling Temperature Dependency (6 - 400K) of the Leakage Current Through the SiO2/High-K Stacks | 1-gen-2010 | Vandelli, Luca; Padovani, Andrea; Larcher, Luca; G., Bersuker; R. G., Southwick III; W. B., Knowlton | |
Current status of EUV lithography development in Japan | 1-gen-2010 | Larcher, L. | |
SET switching effects on PCM endurance | 1-gen-2010 | V., Della Marca; F., Carboni; Larcher, Luca; Padovani, Andrea; Pavan, Paolo | |
Charge loss in TANOS devices caused by Vt sensing measurements during retention | 1-gen-2010 | H., Park; G., Bersuker; D., Gilmer; K. Y., Lim; M., Jo; H., Hwang; Padovani, Andrea; Larcher, Luca; Pavan, Paolo; W., Taylor; P. D., Kirsch | |
On Carbon doping to improve GeTe-based Phase-Change Memory data retention at high temperature | 1-gen-2010 | G., Betti Beneventi; E., Gourvestzk; A., Fantini; L., Perniola; V., Sousa; S., Maitrejean; J. C., Bastien; A., Bastard; A., Fargeix; B., Hyot; C., Jahan; J. F., Nodin; A., Persico; D., Blachier; A., Toffoli; S., Loubriat; A., Roule; S., Lhostis; H., Feldis; G., Reimbold; T., Billon; B., De Salvo; Larcher, Luca; Pavan, Paolo; D., Bensahel; P., Mazoyer; R., Annunziata; F., Boulanger | |
Fundamental reliability issues of advanced charge-trapping Flash memory devices | 1-gen-2010 | Larcher, Luca; Padovani, Andrea | |
Experimental assessment of electrons and holes in erase transient of TANOS and TANVaS memories | 1-gen-2010 | A., Suhane; A., Arreghini; G., Van den bosch; Vandelli, Luca; Padovani, Andrea; L., Breuil; Larcher, Luca; K., De Meyer; J., Van Houdt | |
A Physical Model for Post-Breakdown Digital Gate Current Noise | 1-gen-2010 | Padovani, Andrea; Morassi, Luca; N., Raghavan; Larcher, Luca; L., Wenhu; K. L., Pey; G., Bersuker | |
Role of Holes and Electrons During Erase of TANOS Memories: Evidences for Dipole Formation and its Impact on Reliability | 1-gen-2010 | Vandelli, Luca; Padovani, Andrea; Larcher, Luca; Antonio, Arreghini; Geert Van den, Bosch; Malgorzata, Jurczak; Jan Van, Houdt; Vincenzo Della, Marca; Pavan, Paolo | |
Investigation of trapping/detrapping mechanisms in Al2O3 electron/hole traps and their influence on TANOS memory operations | 1-gen-2010 | Larcher, Luca; Padovani, Andrea; Vincenzo della, Marca; Pavan, Paolo; Bertacchini, Alessandro | |
Carbon-doped GeTe Phase-Change Memory featuring remarkable RESET current reduction | 1-gen-2010 | G., Betti Beneventi; L., Perniola; A., Fantini; D., Blachier; A., Toffoli; E., Gourvest; S., Maitrejean; V., Sousa; C., Jahan; J. F., Nodin; A., Persico; S., Loubriat; A., Roule; S., Lhostis; H., Feldis; G., Reimbold; T., Billon; B., De Salvo; Larcher, Luca; Pavan, Paolo; D., Bensahel; P., Mazoyer; R., Annunziata; F., Boulanger | |
Metal oxide RRAM switching mechanism based on conductive filament microscopic properties | 1-gen-2010 | G., Bersuker; D. C., Gilmer; D., Veksler; J., Yum; H., Park; S., Lian; Vandelli, Luca; Padovani, Andrea; Larcher, Luca; K., Mckenna; A., Shluger; V., Iglesias; M., Porti; M., Nafría; W., Taylor; P. D., Kirsch; R., Jammy | |
Millimeter-Wave 14dBm CMOS Power Amplifier with Input-Output Distributed Transformers | 1-gen-2010 | A., Pallotta; W., Eyssa; Larcher, Luca; R., Brama | |
Analysis of interface-trap effects in inversion-type InGaAs/ZrO2 MOSFETs | 1-gen-2010 | Morassi, Luca; Verzellesi, Giovanni; Padovani, Andrea; Larcher, Luca; Pavan, Paolo; D., Veksler; Injo, Ok; G., Bersuker | |
A novel Algorithm for the Solution of Charge Transport Equations in MANOS Devices Including Charge Trapping in Alumina and Temperature Effects | 1-gen-2010 | Padovani, Andrea; Larcher, Luca | |
Leakage Current in TiN/HfO2/TiN MIM Capacitors and Degradation due to Electrical Stress | 1-gen-2010 | S., Cimino; Padovani, Andrea; Larcher, Luca; V. V., Afanas’Ev; H. J., Hwang; Y. G., Lee; M., Jurczac; D., Wouters; B. H., Lee; H., Hwang; L., Pantisano | |
Temperature Effects on Metal-Alumina-Nitride-Oxide-Silicon Memory Operations | 1-gen-2010 | Padovani, Andrea; Larcher, Luca; D., Heh; G., Bersuker; V., Dellamarca; Pavan, Paolo |
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