In this paper we present a study of Phase-Change non-volatile Memory (PCM) devices integrating carbon-doped GeTe as chalcogenide material. Carbon-doped GeTe, named GeTeC, remarkably lowers the RESET current and features very good data retention properties as well. In particular, GeTe PCM with 10% carbon inclusions (named GeTeC10%) yields about 30% of RESET current reduction with respect to pure GeTe and GST. Furthermore, our GeTeC10% memory cells are expected to guarantee a 10-years-lifetime-temperature of about 127°C, which is one of the highest ever reported for PCM. The outstanding properties of GeTeC make this material promising for non-volatile memory technologies.

Carbon-doped GeTe Phase-Change Memory featuring remarkable RESET current reduction / G., Betti Beneventi; L., Perniola; A., Fantini; D., Blachier; A., Toffoli; E., Gourvest; S., Maitrejean; V., Sousa; C., Jahan; J. F., Nodin; A., Persico; S., Loubriat; A., Roule; S., Lhostis; H., Feldis; G., Reimbold; T., Billon; B., De Salvo; Larcher, Luca; Pavan, Paolo; D., Bensahel; P., Mazoyer; R., Annunziata; F., Boulanger. - STAMPA. - (2010), pp. 313-316. ((Intervento presentato al convegno ESSDERC tenutosi a Seville (Spain) nel 14-16 Sept. 2010 [10.1109/ESSDERC.2010.5618230].

Carbon-doped GeTe Phase-Change Memory featuring remarkable RESET current reduction

LARCHER, Luca;PAVAN, Paolo;
2010-01-01

Abstract

In this paper we present a study of Phase-Change non-volatile Memory (PCM) devices integrating carbon-doped GeTe as chalcogenide material. Carbon-doped GeTe, named GeTeC, remarkably lowers the RESET current and features very good data retention properties as well. In particular, GeTe PCM with 10% carbon inclusions (named GeTeC10%) yields about 30% of RESET current reduction with respect to pure GeTe and GST. Furthermore, our GeTeC10% memory cells are expected to guarantee a 10-years-lifetime-temperature of about 127°C, which is one of the highest ever reported for PCM. The outstanding properties of GeTeC make this material promising for non-volatile memory technologies.
ESSDERC
Seville (Spain)
14-16 Sept. 2010
313
316
G., Betti Beneventi; L., Perniola; A., Fantini; D., Blachier; A., Toffoli; E., Gourvest; S., Maitrejean; V., Sousa; C., Jahan; J. F., Nodin; A., Persico; S., Loubriat; A., Roule; S., Lhostis; H., Feldis; G., Reimbold; T., Billon; B., De Salvo; Larcher, Luca; Pavan, Paolo; D., Bensahel; P., Mazoyer; R., Annunziata; F., Boulanger
Carbon-doped GeTe Phase-Change Memory featuring remarkable RESET current reduction / G., Betti Beneventi; L., Perniola; A., Fantini; D., Blachier; A., Toffoli; E., Gourvest; S., Maitrejean; V., Sousa; C., Jahan; J. F., Nodin; A., Persico; S., Loubriat; A., Roule; S., Lhostis; H., Feldis; G., Reimbold; T., Billon; B., De Salvo; Larcher, Luca; Pavan, Paolo; D., Bensahel; P., Mazoyer; R., Annunziata; F., Boulanger. - STAMPA. - (2010), pp. 313-316. ((Intervento presentato al convegno ESSDERC tenutosi a Seville (Spain) nel 14-16 Sept. 2010 [10.1109/ESSDERC.2010.5618230].
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11380/646631
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