In this paper we present a study of Phase-Change non-volatile Memory (PCM) devices integrating carbon-doped GeTe as chalcogenide material. Carbon-doped GeTe, named GeTeC, remarkably lowers the RESET current and features very good data retention properties as well. In particular, GeTe PCM with 10% carbon inclusions (named GeTeC10%) yields about 30% of RESET current reduction with respect to pure GeTe and GST. Furthermore, our GeTeC10% memory cells are expected to guarantee a 10-years-lifetime-temperature of about 127°C, which is one of the highest ever reported for PCM. The outstanding properties of GeTeC make this material promising for non-volatile memory technologies.
Carbon-doped GeTe Phase-Change Memory featuring remarkable RESET current reduction / G., B.B., L., P., A., F., D., B., A., T., E., G., S., M., V., S., C., J., J. F., N., A., P., S., L., A., R., S., L., H., F., G., R., T., B., B., D.S., Larcher, L., Pavan, P., et al.. - STAMPA. - (2010), pp. 313-316. (2010 European Solid State Device Research Conference, ESSDERC 2010 Seville (Spain) 14-16 Sept. 2010) [10.1109/ESSDERC.2010.5618230].
Carbon-doped GeTe Phase-Change Memory featuring remarkable RESET current reduction
LARCHER, Luca;PAVAN, Paolo;
2010
Abstract
In this paper we present a study of Phase-Change non-volatile Memory (PCM) devices integrating carbon-doped GeTe as chalcogenide material. Carbon-doped GeTe, named GeTeC, remarkably lowers the RESET current and features very good data retention properties as well. In particular, GeTe PCM with 10% carbon inclusions (named GeTeC10%) yields about 30% of RESET current reduction with respect to pure GeTe and GST. Furthermore, our GeTeC10% memory cells are expected to guarantee a 10-years-lifetime-temperature of about 127°C, which is one of the highest ever reported for PCM. The outstanding properties of GeTeC make this material promising for non-volatile memory technologies.
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