In this work, we use atomistic simulation, consolidated by a detailed Al2O3 physico-chemical material analysis, to investigate the origin of traps in Al2O3 (in particular, Al- or O-vacancies and H-interstitials). It is shown that the leakage currents through Al2O3 layers, with different post-deposition anneals, are strictly correlated to the H content. Then, for the first time at our knowledge, the hydrogen-based trap features estimated by quantum simulations are introduced in a TANOS device simulator. A very good agreement is obtained between model and device experimental data, allowing for a clear understanding of the role of alumina H content on the retention characteristics of charge-trap memories.
Investigation of the impact of H-related defects in Al2O3 blocking layer of charge-trap memories by atomistic simulations and device physical modeling / G., Molas; L., Masoero; P., Blaise; Padovani, Andrea; J. P., Colonna; E., Vianello; M., Bocquet; E., Nowak; M., Gasulla; O., Cueto; H., Grampeix; F., Martin; R., Kies; P., Brianceau; M., Gély; A. M., Papon; D., Lafond; J. P., Barnes; C., Licitra; G., Ghibaudo; Larcher, Luca; S., Deleonibus; B., De Salvo. - STAMPA. - (2010), pp. 22.5.1-22.5.4. (Intervento presentato al convegno International Electron Device Meeting tenutosi a San Francisco (CA USA) nel 6-8 Dec. 2010).