In this work, we use atomistic simulation, consolidated by a detailed Al2O3 physico-chemical material analysis, to investigate the origin of traps in Al2O3 (in particular, Al- or O-vacancies and H-interstitials). It is shown that the leakage currents through Al2O3 layers, with different post-deposition anneals, are strictly correlated to the H content. Then, for the first time at our knowledge, the hydrogen-based trap features estimated by quantum simulations are introduced in a TANOS device simulator. A very good agreement is obtained between model and device experimental data, allowing for a clear understanding of the role of alumina H content on the retention characteristics of charge-trap memories.
Investigation of the impact of H-related defects in Al2O3 blocking layer of charge-trap memories by atomistic simulations and device physical modeling / G., M., L., M., P., B., Padovani, A., J. P., C., E., V., M., B., E., N., M., G., O., C., H., G., F., M., R., K., P., B., M., G., A. M., P., D., L., J. P., B., C., L., G., G., et al.. - STAMPA. - (2010), pp. 22.5.1-22.5.4. (International Electron Device Meeting San Francisco (CA USA) 6-8 Dec. 2010).
Investigation of the impact of H-related defects in Al2O3 blocking layer of charge-trap memories by atomistic simulations and device physical modeling
PADOVANI, ANDREA;LARCHER, Luca;
2010
Abstract
In this work, we use atomistic simulation, consolidated by a detailed Al2O3 physico-chemical material analysis, to investigate the origin of traps in Al2O3 (in particular, Al- or O-vacancies and H-interstitials). It is shown that the leakage currents through Al2O3 layers, with different post-deposition anneals, are strictly correlated to the H content. Then, for the first time at our knowledge, the hydrogen-based trap features estimated by quantum simulations are introduced in a TANOS device simulator. A very good agreement is obtained between model and device experimental data, allowing for a clear understanding of the role of alumina H content on the retention characteristics of charge-trap memories.
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