This paper investigates material and electrical propertiesof a new chalcogenide alloy for Phase-Change Memories(PCM): Carbon-doped GeTe (named GeTeC). First, severalphysico-chemical, optical and electrical analyses have beenperformed on full-sheet chalcogenide depositions in order tounderstand the intrinsic GeTeC phase-change behavior, andto characterize structure and composition of amorphous andcrystalline states. Then, GeTeC with two different Carbon doping(4% and 10%) has been integrated in pillar-type analytical PCMcells. Physico-chemical and electrical data indicate that GeTeC ischaracterized by a much more stable amorphous phase comparedto undoped GeTe. Thus, GeTeC offers a slower programmingspeed versus GeTe, but an improved data retention at hightemperature. Finally, we argue that GeTeC alloy is a promisingcandidate for future developments of PCM technologies forembedded applications.

On Carbon doping to improve GeTe-based Phase-Change Memory data retention at high temperature / G., Betti Beneventi; E., Gourvestzk; A., Fantini; L., Perniola; V., Sousa; S., Maitrejean; J. C., Bastien; A., Bastard; A., Fargeix; B., Hyot; C., Jahan; J. F., Nodin; A., Persico; D., Blachier; A., Toffoli; S., Loubriat; A., Roule; S., Lhostis; H., Feldis; G., Reimbold; T., Billon; B., De Salvo; Larcher, Luca; Pavan, Paolo; D., Bensahel; P., Mazoyer; R., Annunziata; F., Boulanger. - STAMPA. - (2010), pp. 1-4. ((Intervento presentato al convegno Intenrational Memory Workshop tenutosi a Seul (Korea) nel May 2010 [10.1109/IMW.2010.5488328].

On Carbon doping to improve GeTe-based Phase-Change Memory data retention at high temperature

LARCHER, Luca;PAVAN, Paolo;
2010-01-01

Abstract

This paper investigates material and electrical propertiesof a new chalcogenide alloy for Phase-Change Memories(PCM): Carbon-doped GeTe (named GeTeC). First, severalphysico-chemical, optical and electrical analyses have beenperformed on full-sheet chalcogenide depositions in order tounderstand the intrinsic GeTeC phase-change behavior, andto characterize structure and composition of amorphous andcrystalline states. Then, GeTeC with two different Carbon doping(4% and 10%) has been integrated in pillar-type analytical PCMcells. Physico-chemical and electrical data indicate that GeTeC ischaracterized by a much more stable amorphous phase comparedto undoped GeTe. Thus, GeTeC offers a slower programmingspeed versus GeTe, but an improved data retention at hightemperature. Finally, we argue that GeTeC alloy is a promisingcandidate for future developments of PCM technologies forembedded applications.
Intenrational Memory Workshop
Seul (Korea)
May 2010
1
4
G., Betti Beneventi; E., Gourvestzk; A., Fantini; L., Perniola; V., Sousa; S., Maitrejean; J. C., Bastien; A., Bastard; A., Fargeix; B., Hyot; C., Jahan; J. F., Nodin; A., Persico; D., Blachier; A., Toffoli; S., Loubriat; A., Roule; S., Lhostis; H., Feldis; G., Reimbold; T., Billon; B., De Salvo; Larcher, Luca; Pavan, Paolo; D., Bensahel; P., Mazoyer; R., Annunziata; F., Boulanger
On Carbon doping to improve GeTe-based Phase-Change Memory data retention at high temperature / G., Betti Beneventi; E., Gourvestzk; A., Fantini; L., Perniola; V., Sousa; S., Maitrejean; J. C., Bastien; A., Bastard; A., Fargeix; B., Hyot; C., Jahan; J. F., Nodin; A., Persico; D., Blachier; A., Toffoli; S., Loubriat; A., Roule; S., Lhostis; H., Feldis; G., Reimbold; T., Billon; B., De Salvo; Larcher, Luca; Pavan, Paolo; D., Bensahel; P., Mazoyer; R., Annunziata; F., Boulanger. - STAMPA. - (2010), pp. 1-4. ((Intervento presentato al convegno Intenrational Memory Workshop tenutosi a Seul (Korea) nel May 2010 [10.1109/IMW.2010.5488328].
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11380/643087
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