This paper investigates material and electrical propertiesof a new chalcogenide alloy for Phase-Change Memories(PCM): Carbon-doped GeTe (named GeTeC). First, severalphysico-chemical, optical and electrical analyses have beenperformed on full-sheet chalcogenide depositions in order tounderstand the intrinsic GeTeC phase-change behavior, andto characterize structure and composition of amorphous andcrystalline states. Then, GeTeC with two different Carbon doping(4% and 10%) has been integrated in pillar-type analytical PCMcells. Physico-chemical and electrical data indicate that GeTeC ischaracterized by a much more stable amorphous phase comparedto undoped GeTe. Thus, GeTeC offers a slower programmingspeed versus GeTe, but an improved data retention at hightemperature. Finally, we argue that GeTeC alloy is a promisingcandidate for future developments of PCM technologies forembedded applications.
On Carbon doping to improve GeTe-based Phase-Change Memory data retention at high temperature / G., B.B., E., G., A., F., L., P., V., S., S., M., J. C., B., A., B., A., F., B., H., C., J., J. F., N., A., P., D., B., A., T., S., L., A., R., S., L., H., F., G., R., et al.. - STAMPA. - (2010), pp. 1-4. (2010 IEEE International Memory Workshop, IMW 2010 Seul (Korea) May 2010) [10.1109/IMW.2010.5488328].
On Carbon doping to improve GeTe-based Phase-Change Memory data retention at high temperature
LARCHER, Luca;PAVAN, Paolo;
2010
Abstract
This paper investigates material and electrical propertiesof a new chalcogenide alloy for Phase-Change Memories(PCM): Carbon-doped GeTe (named GeTeC). First, severalphysico-chemical, optical and electrical analyses have beenperformed on full-sheet chalcogenide depositions in order tounderstand the intrinsic GeTeC phase-change behavior, andto characterize structure and composition of amorphous andcrystalline states. Then, GeTeC with two different Carbon doping(4% and 10%) has been integrated in pillar-type analytical PCMcells. Physico-chemical and electrical data indicate that GeTeC ischaracterized by a much more stable amorphous phase comparedto undoped GeTe. Thus, GeTeC offers a slower programmingspeed versus GeTe, but an improved data retention at hightemperature. Finally, we argue that GeTeC alloy is a promisingcandidate for future developments of PCM technologies forembedded applications.
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