Metal Insulator Metal (MIM) capacitors are widely used in the electronic industry for DRAM as well as for analog applications. Defects in dielectric structures are very important as they control not only gate leakage and power consumption but, also, device noise and lifetime. Physical and electrical characteristics of TiN/HfO2/TiN capacitors have been investigated aiming at the study of defects and defect energy position in HfO2 on TiN.
Leakage Current in TiN/HfO2/TiN MIM Capacitors and Degradation due to Electrical Stress / S., Cimino; Padovani, Andrea; Larcher, Luca; V. V., Afanas’Ev; H. J., Hwang; Y. G., Lee; M., Jurczac; D., Wouters; B. H., Lee; H., Hwang; L., Pantisano. - ELETTRONICO. - E5 - High Dielectric Constant and Other Dielectric Materials for Nanoelectronics and Photonics:(2010), pp. 1-1. ((Intervento presentato al convegno 218th ECS Meeting tenutosi a Las Vegas, Nevada (USA) nel October 10 - 15, 2010.
Leakage Current in TiN/HfO2/TiN MIM Capacitors and Degradation due to Electrical Stress
PADOVANI, ANDREA;LARCHER, Luca;
2010
Abstract
Metal Insulator Metal (MIM) capacitors are widely used in the electronic industry for DRAM as well as for analog applications. Defects in dielectric structures are very important as they control not only gate leakage and power consumption but, also, device noise and lifetime. Physical and electrical characteristics of TiN/HfO2/TiN capacitors have been investigated aiming at the study of defects and defect energy position in HfO2 on TiN.
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