ASANOVSKI, RUBEN
 Distribuzione geografica
Continente #
EU - Europa 547
NA - Nord America 155
AS - Asia 70
Totale 772
Nazione #
IE - Irlanda 264
IT - Italia 162
US - Stati Uniti d'America 155
CN - Cina 32
SE - Svezia 31
HK - Hong Kong 28
FR - Francia 19
GB - Regno Unito 18
DE - Germania 14
FI - Finlandia 10
BE - Belgio 8
CH - Svizzera 6
IN - India 5
LT - Lituania 4
MK - Macedonia 4
AT - Austria 3
BG - Bulgaria 3
ID - Indonesia 3
JP - Giappone 1
PT - Portogallo 1
SG - Singapore 1
Totale 772
Città #
Dublin 264
Chandler 36
Hong Kong 28
Bologna 25
Modena 25
Nyköping 16
Ashburn 13
Paris 13
Beijing 12
Fairfield 12
Seattle 9
Southend 8
Helsinki 7
Milan 7
Houston 6
Wilmington 6
Porto Mantovano 5
Bremen 4
Einsiedeln 4
Heverlee 4
New York 4
Princeton 4
Ravenna 4
Reggio Emilia 4
Roorkee 4
Udine 4
Ann Arbor 3
Calcinato 3
Cambridge 3
Campodarsego 3
Casalgrande 3
Jakarta 3
Lappeenranta 3
Leuven 3
London 3
Montale 3
Mordano 3
Skopje 3
Sofia 3
Woodbridge 3
Albinea 2
Bomporto 2
Castel Maggiore 2
Castelfranco Emilia 2
Nanjing 2
Orsay 2
Pordenone 2
Rome 2
San Diego 2
San Mauro Pascoli 2
Sassuolo 2
Verona 2
Villafranca Padovana 2
Xi'an 2
Acton 1
Benevento 1
Berlin 1
Birmingham 1
Boardman 1
Cattolica 1
Cesena 1
Chiari 1
Clifton Park 1
Conselice 1
Finale Emilia 1
Forlì 1
Formigine 1
Guangzhou 1
Guwahati 1
Kilburn 1
Lasino 1
Lugo 1
Malonno 1
Messina 1
Montegaldella 1
Munich 1
Norwalk 1
Novellara 1
Padova 1
Prescot 1
Redwood City 1
Singapore 1
Tokyo 1
Villach 1
Wandsworth 1
Totale 629
Nome #
New insights on the excess 1/f noise at cryogenic temperatures in 28 nm CMOS and Ge MOSFETs for quantum computing applications 213
1/f noise model based on trap-assisted tunneling for ultra-thin oxides MOSFETs 145
Importance of Charge Trapping/Detrapping Involving the Gate Electrode on the Noise Currents of Scaled MOSFETs 89
A Comprehensive Gate and Drain Trapping/Detrapping Noise Model and Its Implications for Thin-Dielectric MOSFETs 87
Understanding the Excess 1/f Noise in MOSFETs at Cryogenic Temperatures 78
Investigating the correlation between interface and dielectric trap densities in aged p-MOSFETs using current-voltage, charge pumping, and 1/f noise characterization techniques 58
On the accuracy of the formula used to extract trap density in MOSFETs from 1/f noise 52
Assessment of Advanced Nanoscale Bulk FinFET's Self-Heating accounting for degraded thermal conductivity at the nanoscale 22
Characterization and Advanced Modeling of Dielectric Defects in Low-Thermal Budget RMG MOSFETs Using 1/f Noise Analysis 22
Characterization of DC performance and low-frequency noise of an array of nMOS Forksheets from 300 K to 4 K 12
Rumore dovuto a Trappole in Tecnologie MOSFET all'Avanguardia fino a Temperature Criogeniche 6
Probing Band Tail States in MOSFETs at Cryogenic Temperatures through Noise Spectroscopy 4
Totale 788
Categoria #
all - tutte 3.774
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 3.774


Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/202166 6 0 6 0 11 12 10 3 10 2 4 2
2021/2022119 0 4 13 13 6 8 4 1 25 4 26 15
2022/2023185 13 15 6 10 13 19 7 16 22 4 9 51
2023/2024418 55 44 43 39 62 48 40 14 5 17 35 16
Totale 788