ASANOVSKI, RUBEN
 Distribuzione geografica
Continente #
EU - Europa 81
AS - Asia 11
NA - Nord America 9
SA - Sud America 2
Totale 103
Nazione #
IE - Irlanda 44
FR - Francia 14
IT - Italia 12
US - Stati Uniti d'America 9
FI - Finlandia 7
IN - India 5
ID - Indonesia 3
BR - Brasile 2
DE - Germania 2
KR - Corea 2
AE - Emirati Arabi Uniti 1
ES - Italia 1
LT - Lituania 1
Totale 103
Città #
Dublin 44
Lappeenranta 7
Columbus 4
Jakarta 3
Paris 3
Bologna 2
Chuncheon 2
Delhi 2
Kolkata 2
Los Angeles 2
Modena 2
Norman 2
Porto Mantovano 2
Sassuolo 2
São Paulo 2
Barcelona 1
Calcinato 1
Finale Emilia 1
Germantown 1
New Delhi 1
Rome 1
Totale 87
Nome #
Investigating the correlation between interface and dielectric trap densities in aged p-MOSFETs using current-voltage, charge pumping, and 1/f noise characterization techniques, file d8786b59-cb3e-4939-b43f-e45836a277b2 56
Understanding the Excess 1/f Noise in MOSFETs at Cryogenic Temperatures, file 467457de-f8bf-40b5-9f25-e7f035c17454 18
Characterization of DC performance and low-frequency noise of an array of nMOS Forksheets from 300 K to 4 K, file 814260d4-f0b1-4384-9d47-65e44f8179c7 13
Characterization and Advanced Modeling of Dielectric Defects in Low-Thermal Budget RMG MOSFETs Using 1/f Noise Analysis, file b957416f-5ccc-4ebe-a76b-8bf82f12718c 13
Characterization of DC performance and low-frequency noise of an array of nMOS Forksheets from 300 K to 4 K, file e81312e3-40c8-4748-a669-0aea80c1cb9d 2
1/f noise model based on trap-assisted tunneling for ultra-thin oxides MOSFETs, file e31e124e-4f02-987f-e053-3705fe0a095a 1
Totale 103
Categoria #
all - tutte 582
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 582


Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/20211 1 0 0 0 0 0 0 0 0 0 0 0
2023/2024102 0 1 3 0 25 22 6 5 4 4 14 18
Totale 103