ASANOVSKI, RUBEN
ASANOVSKI, RUBEN
Dipartimento di Ingegneria "Enzo Ferrari"
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Risultati 1 - 6 di 6 (tempo di esecuzione: 0.008 secondi).
1/f noise model based on trap-assisted tunneling for ultra-thin oxides MOSFETs
2020-01-01 Caruso, Enrico; Palestri, Pierpaolo; Selmi, Luca; Asanovski, Ruben
A Comprehensive Gate and Drain Trapping/Detrapping Noise Model and Its Implications for Thin-Dielectric MOSFETs
2021-01-01 Asanovski, R.; Palestri, P.; Caruso, E.; Selmi, L.
Importance of Charge Trapping/Detrapping Involving the Gate Electrode on the Noise Currents of Scaled MOSFETs
2022-01-01 Asanovski, R.; Palestri, P.; Selmi, L.
New insights on the excess 1/f noise at cryogenic temperatures in 28 nm CMOS and Ge MOSFETs for quantum computing applications
2022-01-01 Asanovski, R.; Grill, A.; Franco, J.; Palestri, P.; Beckers, A.; Kaczer, B.; Selmi, L.
On the accuracy of the formula used to extract trap density in MOSFETs from 1/f noise
2022-01-01 Asanovski, R.; Palestri, P.; Selmi, L.
Understanding the Excess 1/f Noise in MOSFETs at Cryogenic Temperatures
2023-01-01 Asanovski, R; Grill, A; Franco, J; Palestri, P; Beckers, A; Kaczer, B; Selmi, L