ASANOVSKI, RUBEN

ASANOVSKI, RUBEN  

Dipartimento di Ingegneria "Enzo Ferrari"  

Mostra records
Risultati 1 - 16 di 16 (tempo di esecuzione: 0.023 secondi).
Titolo Data di pubblicazione Autore(i) File
1/f noise model based on trap-assisted tunneling for ultra-thin oxides MOSFETs 1-gen-2020 Caruso, Enrico; Palestri, Pierpaolo; Selmi, Luca; Asanovski, Ruben
A Comprehensive Gate and Drain Trapping/Detrapping Noise Model and Its Implications for Thin-Dielectric MOSFETs 1-gen-2021 Asanovski, R.; Palestri, P.; Caruso, E.; Selmi, L.
Assessment of Advanced Nanoscale Bulk FinFET's Self-Heating accounting for degraded thermal conductivity at the nanoscale 1-gen-2023 Tondelli, Lisa; Asanovski, Ruben; Selmi, Luca
Assessment of the Transient Self-Heating Effect and its Impact on the Performance of Watt-Level RF Power Amplifier in a FinFET Technology 1-gen-2024 Dinh, T. V.; Tam, S-W.; Scholten, A. J.; Tondelli, L.; Pijper, R. M. T.; Kondapalli, S. H.; Xie, J.; Wong, A.; To, I.; Asanovski, R.; Selmi, L.
Characterization and Advanced Modeling of Dielectric Defects in Low-Thermal Budget RMG MOSFETs Using 1/f Noise Analysis 1-gen-2024 Asanovski, R.; Arimura, H.; de Marneffe, J. -F.; Palestri, P.; Horiguchi, N.; Kaczer, B.; Selmi, L.; Franco, J.
Characterization of DC performance and low-frequency noise of an array of nMOS Forksheets from 300 K to 4 K 1-gen-2024 Asanovski, R.; Grill, A.; Franco, J.; Palestri, P.; Mertens, H.; Ritzenthaler, R.; Horiguchi, N.; Kaczer, B.; Selmi, L.
Importance of Charge Trapping/Detrapping Involving the Gate Electrode on the Noise Currents of Scaled MOSFETs 1-gen-2022 Asanovski, R.; Palestri, P.; Selmi, L.
Investigating the correlation between interface and dielectric trap densities in aged p-MOSFETs using current-voltage, charge pumping, and 1/f noise characterization techniques 1-gen-2023 Asanovski, Ruben; Franco, Jacopo; Palestri, Pierpaolo; Kaczer, Ben; Selmi, Luca
New insights on the excess 1/f noise at cryogenic temperatures in 28 nm CMOS and Ge MOSFETs for quantum computing applications 1-gen-2022 Asanovski, R.; Grill, A.; Franco, J.; Palestri, P.; Beckers, A.; Kaczer, B.; Selmi, L.
On the accuracy of the formula used to extract trap density in MOSFETs from 1/f noise 1-gen-2022 Asanovski, R.; Palestri, P.; Selmi, L.
On the design of LDMOS finFETs in advanced technology nodes 1-gen-2024 Ruggieri, Alessandro; Tondelli, Lisa; Asanovski, Ruben; Selmi, Luca
On the Output Conductance Dispersion due to Traps and Self-Heating in Large Bulk, FDSOI and FinFET nMOS Devices 1-gen-2024 Tondelli, L.; Scholten, A. J.; Asanovski, R.; Pijper, R. M. T.; Dinh, T. V.; Selmi, L.
Probing Band Tail States in MOSFETs at Cryogenic Temperatures through Noise Spectroscopy 1-gen-2023 Asanovski, R.; Grill, A.; Franco, J.; Palestri, P.; Li, R.; Kubicek, S.; De Greve, K.; Kaczer, B.; Selmi, L.
Rumore dovuto a Trappole in Tecnologie MOSFET all'Avanguardia fino a Temperature Criogeniche 10-apr-2024 Asanovski, Ruben
Understanding the Excess 1/f Noise in MOSFETs at Cryogenic Temperatures 1-gen-2023 Asanovski, R; Grill, A; Franco, J; Palestri, P; Beckers, A; Kaczer, B; Selmi, L
Understanding the Self-Heating Effects Measured With the AC Output Conductance Method in Advanced FinFET Nodes 1-gen-2024 Tondelli, L.; Asanovski, R.; Scholten, A. J.; Dinh, T. V.; Tam, S. -W.; Pijper, R. M. T.; Selmi, L.