ASANOVSKI, RUBEN
ASANOVSKI, RUBEN
Dipartimento di Ingegneria "Enzo Ferrari"
Mostra
records
Risultati 1 - 4 di 4 (tempo di esecuzione: 0.006 secondi).
1/f noise model based on trap-assisted tunneling for ultra-thin oxides MOSFETs
2020-01-01 Caruso, Enrico; Palestri, Pierpaolo; Selmi, Luca; Asanovski, Ruben
A Comprehensive Gate and Drain Trapping/Detrapping Noise Model and Its Implications for Thin-Dielectric MOSFETs
2021-01-01 Asanovski, R.; Palestri, P.; Caruso, E.; Selmi, L.
Importance of Charge Trapping/Detrapping Involving the Gate Electrode on the Noise Currents of Scaled MOSFETs
2022-01-01 Asanovski, R.; Palestri, P.; Selmi, L.
On the accuracy of the formula used to extract trap density in MOSFETs from 1/f noise
2022-01-01 Asanovski, R.; Palestri, P.; Selmi, L.
| Titolo | Data di pubblicazione | Autore(i) | File |
|---|---|---|---|
| 1/f noise model based on trap-assisted tunneling for ultra-thin oxides MOSFETs | 1-gen-2020 | Caruso, Enrico; Palestri, Pierpaolo; Selmi, Luca; Asanovski, Ruben | |
| A Comprehensive Gate and Drain Trapping/Detrapping Noise Model and Its Implications for Thin-Dielectric MOSFETs | 1-gen-2021 | Asanovski, R.; Palestri, P.; Caruso, E.; Selmi, L. | |
| Importance of Charge Trapping/Detrapping Involving the Gate Electrode on the Noise Currents of Scaled MOSFETs | 1-gen-2022 | Asanovski, R.; Palestri, P.; Selmi, L. | |
| On the accuracy of the formula used to extract trap density in MOSFETs from 1/f noise | 1-gen-2022 | Asanovski, R.; Palestri, P.; Selmi, L. |