ASANOVSKI, RUBEN

ASANOVSKI, RUBEN  

Dipartimento di Ingegneria "Enzo Ferrari"  

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Titolo Data di pubblicazione Autore(i) File
1/f noise model based on trap-assisted tunneling for ultra-thin oxides MOSFETs 1-gen-2020 Caruso, Enrico; Palestri, Pierpaolo; Selmi, Luca; Asanovski, Ruben
A Comprehensive Gate and Drain Trapping/Detrapping Noise Model and Its Implications for Thin-Dielectric MOSFETs 1-gen-2021 Asanovski, R.; Palestri, P.; Caruso, E.; Selmi, L.
Importance of Charge Trapping/Detrapping Involving the Gate Electrode on the Noise Currents of Scaled MOSFETs 1-gen-2022 Asanovski, R.; Palestri, P.; Selmi, L.
Investigating the correlation between interface and dielectric trap densities in aged p-MOSFETs using current-voltage, charge pumping, and 1/f noise characterization techniques 1-gen-2023 Asanovski, Ruben; Franco, Jacopo; Palestri, Pierpaolo; Kaczer, Ben; Selmi, Luca
New insights on the excess 1/f noise at cryogenic temperatures in 28 nm CMOS and Ge MOSFETs for quantum computing applications 1-gen-2022 Asanovski, R.; Grill, A.; Franco, J.; Palestri, P.; Beckers, A.; Kaczer, B.; Selmi, L.
On the accuracy of the formula used to extract trap density in MOSFETs from 1/f noise 1-gen-2022 Asanovski, R.; Palestri, P.; Selmi, L.
Understanding the Excess 1/f Noise in MOSFETs at Cryogenic Temperatures 1-gen-2023 Asanovski, R; Grill, A; Franco, J; Palestri, P; Beckers, A; Kaczer, B; Selmi, L