Carrier trapping/detrapping from/to the gate into dielectric traps is often neglected when modeling noise in MOSFETs and, to the best of our knowledge, no systematic study of its impacts on scaled devices is available. In this article, we show that this trapping mechanism cannot be neglected in nowadays aggressively scaled gate dielectric thicknesses without causing errors up to several orders of magnitude in the estimation of the drain current noise. The noise generation mechanism is modeled analytically and then analyzed through the use of 2-D and 3-D TCAD simulations of scaled MOSFETs with different architectures and channel/gate-stack materials. The results provide new insights for technology and device designers, highlight the relevance of the choice of the gate metal work function (WF) and the role of valence band electron trapping at high gate voltages.

Importance of Charge Trapping/Detrapping Involving the Gate Electrode on the Noise Currents of Scaled MOSFETs / Asanovski, R.; Palestri, P.; Selmi, L.. - In: IEEE TRANSACTIONS ON ELECTRON DEVICES. - ISSN 0018-9383. - 69:3(2022), pp. 1313-1320. [10.1109/TED.2022.3147158]

Importance of Charge Trapping/Detrapping Involving the Gate Electrode on the Noise Currents of Scaled MOSFETs

Asanovski R.;Selmi L.
2022

Abstract

Carrier trapping/detrapping from/to the gate into dielectric traps is often neglected when modeling noise in MOSFETs and, to the best of our knowledge, no systematic study of its impacts on scaled devices is available. In this article, we show that this trapping mechanism cannot be neglected in nowadays aggressively scaled gate dielectric thicknesses without causing errors up to several orders of magnitude in the estimation of the drain current noise. The noise generation mechanism is modeled analytically and then analyzed through the use of 2-D and 3-D TCAD simulations of scaled MOSFETs with different architectures and channel/gate-stack materials. The results provide new insights for technology and device designers, highlight the relevance of the choice of the gate metal work function (WF) and the role of valence band electron trapping at high gate voltages.
mar-2022
69
3
1313
1320
Importance of Charge Trapping/Detrapping Involving the Gate Electrode on the Noise Currents of Scaled MOSFETs / Asanovski, R.; Palestri, P.; Selmi, L.. - In: IEEE TRANSACTIONS ON ELECTRON DEVICES. - ISSN 0018-9383. - 69:3(2022), pp. 1313-1320. [10.1109/TED.2022.3147158]
Asanovski, R.; Palestri, P.; Selmi, L.
File in questo prodotto:
Non ci sono file associati a questo prodotto.
Pubblicazioni consigliate

Caricamento pubblicazioni consigliate

Licenza Creative Commons
I metadati presenti in IRIS UNIMORE sono rilasciati con licenza Creative Commons CC0 1.0 Universal, mentre i file delle pubblicazioni sono rilasciati con licenza Attribuzione 4.0 Internazionale (CC BY 4.0), salvo diversa indicazione.
In caso di violazione di copyright, contattare Supporto Iris

Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11380/1265717
Citazioni
  • ???jsp.display-item.citation.pmc??? ND
  • Scopus 1
  • ???jsp.display-item.citation.isi??? 1
social impact