Noise spectroscopy is a powerful non-destructive technique to characterize the quality of gate dielectrics in MOSFETs. Trap densities are routinely extracted by fitting the 1/f part of the drain current noise spectrum with a widely known analytical expression containing several approximations within. This paper compares this 1/f noise analytical expression with microscopic simulations, evaluates its accuracy under different scenarios, and highlights when the main assumptions fall short. It is found that the expression agrees well with non-radiative multi-phonon (NMP) models at room temperature for devices featuring a thick dielectric. However, the formula fails to correctly predict the noise of nowadays aggressively scaled devices, because it neglects trapping/de-trapping with the gate electrode and the electrostatic charge scaling of the traps due to their distance from the channel.

On the accuracy of the formula used to extract trap density in MOSFETs from 1/f noise / Asanovski, R.; Palestri, P.; Selmi, L.. - In: SOLID-STATE ELECTRONICS. - ISSN 0038-1101. - 194:(2022), p. 108311. ((Intervento presentato al convegno EUROSOI-ULIS 2022 tenutosi a Udin nel May 2022 [10.1016/j.sse.2022.108311].

On the accuracy of the formula used to extract trap density in MOSFETs from 1/f noise

Asanovski R.;Selmi L.
2022

Abstract

Noise spectroscopy is a powerful non-destructive technique to characterize the quality of gate dielectrics in MOSFETs. Trap densities are routinely extracted by fitting the 1/f part of the drain current noise spectrum with a widely known analytical expression containing several approximations within. This paper compares this 1/f noise analytical expression with microscopic simulations, evaluates its accuracy under different scenarios, and highlights when the main assumptions fall short. It is found that the expression agrees well with non-radiative multi-phonon (NMP) models at room temperature for devices featuring a thick dielectric. However, the formula fails to correctly predict the noise of nowadays aggressively scaled devices, because it neglects trapping/de-trapping with the gate electrode and the electrostatic charge scaling of the traps due to their distance from the channel.
EUROSOI-ULIS 2022
Udin
May 2022
194
108311
Asanovski, R.; Palestri, P.; Selmi, L.
On the accuracy of the formula used to extract trap density in MOSFETs from 1/f noise / Asanovski, R.; Palestri, P.; Selmi, L.. - In: SOLID-STATE ELECTRONICS. - ISSN 0038-1101. - 194:(2022), p. 108311. ((Intervento presentato al convegno EUROSOI-ULIS 2022 tenutosi a Udin nel May 2022 [10.1016/j.sse.2022.108311].
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11380/1277121
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