CIONI, MARCELLO
 Distribuzione geografica
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Continente #
NA - Nord America 1.672
AS - Asia 1.570
EU - Europa 1.101
SA - Sud America 187
AF - Africa 25
OC - Oceania 2
Continente sconosciuto - Info sul continente non disponibili 1
Totale 4.558
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Nazione #
US - Stati Uniti d'America 1.630
IT - Italia 528
SG - Singapore 480
CN - Cina 429
HK - Hong Kong 219
BR - Brasile 143
VN - Vietnam 128
GB - Regno Unito 127
DE - Germania 81
KR - Corea 77
FR - Francia 72
SE - Svezia 65
IN - India 57
RU - Federazione Russa 50
FI - Finlandia 43
TW - Taiwan 41
NL - Olanda 35
BD - Bangladesh 31
JP - Giappone 24
CA - Canada 21
AR - Argentina 17
ID - Indonesia 16
PL - Polonia 13
IE - Irlanda 12
MX - Messico 12
BG - Bulgaria 11
TR - Turchia 11
UA - Ucraina 10
ZA - Sudafrica 10
ES - Italia 9
IQ - Iraq 9
EC - Ecuador 7
LT - Lituania 7
UZ - Uzbekistan 7
CO - Colombia 6
AT - Austria 5
CL - Cile 5
DK - Danimarca 5
PH - Filippine 5
RO - Romania 5
SA - Arabia Saudita 5
AE - Emirati Arabi Uniti 4
BE - Belgio 4
CR - Costa Rica 4
JO - Giordania 4
MY - Malesia 4
CH - Svizzera 3
GR - Grecia 3
KE - Kenya 3
KW - Kuwait 3
LB - Libano 3
PE - Perù 3
PK - Pakistan 3
BY - Bielorussia 2
DZ - Algeria 2
EG - Egitto 2
JM - Giamaica 2
MD - Moldavia 2
MK - Macedonia 2
NP - Nepal 2
PY - Paraguay 2
SV - El Salvador 2
TJ - Tagikistan 2
UY - Uruguay 2
A2 - ???statistics.table.value.countryCode.A2??? 1
AL - Albania 1
AO - Angola 1
AU - Australia 1
AZ - Azerbaigian 1
BH - Bahrain 1
BO - Bolivia 1
CG - Congo 1
CZ - Repubblica Ceca 1
DO - Repubblica Dominicana 1
ET - Etiopia 1
HU - Ungheria 1
IL - Israele 1
LK - Sri Lanka 1
LV - Lettonia 1
MA - Marocco 1
MN - Mongolia 1
MW - Malawi 1
NG - Nigeria 1
NZ - Nuova Zelanda 1
PT - Portogallo 1
RS - Serbia 1
SD - Sudan 1
SK - Slovacchia (Repubblica Slovacca) 1
TH - Thailandia 1
TZ - Tanzania 1
VE - Venezuela 1
Totale 4.558
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Città #
Singapore 294
Santa Clara 240
Hong Kong 202
Ashburn 189
Hefei 156
Chandler 119
San Jose 105
Milan 99
Fairfield 95
Seoul 59
Beijing 58
Nyköping 58
London 57
Los Angeles 57
Modena 54
Chicago 49
Cambridge 43
Helsinki 36
Ho Chi Minh City 35
Hanoi 31
Padova 30
Council Bluffs 29
New York 27
Seattle 25
Woodbridge 24
The Dalles 23
Boardman 22
Wilmington 22
Houston 21
Kent 21
San Diego 21
Taipei 18
Buffalo 17
Ann Arbor 16
Bologna 16
Moscow 16
Reggio Emilia 16
Rome 15
Munich 14
Princeton 13
Bremen 12
Brooklyn 11
Dallas 11
Denver 11
Frankfurt am Main 11
Guangzhou 11
São Paulo 11
Turin 11
Wallingford 11
Dublin 10
Hsinchu 10
Jakarta 10
Orem 10
Sofia 10
Tokyo 10
Chennai 9
Warrington 9
Warsaw 9
Amsterdam 8
Bengaluru 8
Formigine 8
Grafing 8
Paris 8
Shanghai 8
Assèmini 7
Catania 7
Da Nang 7
Haiphong 7
Lauterbourg 7
Manchester 7
Padua 7
Piacenza 7
Ravenna 7
Southend 7
Stockholm 7
Tashkent 7
Compiègne 6
Daegu 6
Duncan 6
Marseille 6
Montreal 6
Palermo 6
Phoenix 6
Reggio Nell'emilia 6
Salt Lake City 6
Brantford 5
Columbus 5
Delhi 5
Elk Grove Village 5
Mumbai 5
Parma 5
Redondo Beach 5
Vienna 5
Washington 5
Amman 4
Arsikere 4
Bari 4
Cagliari 4
Dhaka 4
Istanbul 4
Totale 2.884
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Nome #
GaN-based power devices: Physics, reliability, and perspectives 573
Partial Recovery of Dynamic RON Versus OFF-State Stress Voltage in p-GaN Gate AlGaN/GaN Power HEMTs 302
Electric Field and Self-Heating Effects on the Emission Time of Iron Traps in GaN HEMTs 301
Experimental and numerical investigation of Poole-Frenkel effect on dynamic RON transients in C-doped p-GaN HEMTs 298
Evaluation of VTH and RON Drifts during Switch-Mode Operation in Packaged SiC MOSFETs 297
Mechanisms Underlying the Bidirectional VT Shift After Negative-Bias Temperature Instability Stress in Carbon-Doped Fully Recessed AlGaN/GaN MIS-HEMTs 283
Caratterizzazione di Dispositivi di Potenza a Semiconduttore con Largo Band-Gap 268
Role of carbon in dynamic effects and reliability of 0.15-um AlGaN/GaN HEMTs for RF power amplifiers 227
Investigation on VTH and RON Slow/Fast Drifts in SiC MOSFETs 226
A Novel Temperature Estimation Technique Exploiting Carrier Emission from Buffer Traps 185
Gate-Bias Induced RON Instability in p-GaN Power HEMTs 183
Fe-Traps Influence on Time-dependent Breakdown Voltage in 0.1-μm GaN HEMTs for 5G Applications 183
Identification of Interface States responsible for VTHHysteresis in packaged SiC MOSFETs 182
Effect of Trap-Filling Bias on the Extraction of the Time Constant of Drain Current Transients in AlGaN/GaN HEMTs 179
Impact of Soft- and Hard-Switching transitions on VTH and RON Drifts in packaged SiC MOSFETs 161
On the Dynamic RON, Vertical Leakage and Capacitance Behavior in pGaN HEMTs With Heavily Carbon-Doped Buffers 158
Microwave and millimeter-wave GaN HEMTs: impact of epitaxial structure on short-channel effects, electron trapping and reliability 141
Unveiling the Role of Hole Barrier Traps on ON-Resistance Instability after Gate Bias Stress in p-GaN Power HEMTs 121
RON Degradation Mechanisms of ON-Wafer 100-V p-GaN HEMTs Emulating Monolithically Integrated Half-Bridge Circuits 103
On-Wafer RONDegradation Analysis of 100 v p-GaN HEMTs Emulating Low-and High-Side Operation in Half Bridge Circuits 103
Analysis of Dynamic-Ron and VTH shift in on-wafer 100-V p-GaN HEMTs Emulating Monolithically Integrated Half-Bridge Circuits 92
Impact of OFF-State Stress on Dynamic RON of On-Wafer 100 V p-GaN HEMTs, Studied by Emulating Monolithically Integrated Half-Bridge Operation 46
Totale 4.612
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Categoria #
all - tutte 19.096
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 19.096
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/202177 0 0 0 0 0 0 0 0 0 0 0 77
2021/2022376 25 18 26 5 33 38 33 11 38 28 78 43
2022/2023438 38 36 36 31 41 42 12 62 65 11 40 24
2023/2024399 32 27 24 43 55 21 40 36 21 31 16 53
2024/20251.150 57 20 14 76 175 139 46 75 141 58 182 167
2025/20262.034 153 121 131 198 332 112 259 135 230 204 150 9
Totale 4.612