CIONI, MARCELLO
 Distribuzione geografica
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Continente #
NA - Nord America 1.308
AS - Asia 1.115
EU - Europa 973
SA - Sud America 156
AF - Africa 15
OC - Oceania 2
Continente sconosciuto - Info sul continente non disponibili 1
Totale 3.570
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Nazione #
US - Stati Uniti d'America 1.286
IT - Italia 469
CN - Cina 349
SG - Singapore 344
HK - Hong Kong 186
BR - Brasile 124
GB - Regno Unito 105
DE - Germania 72
VN - Vietnam 70
SE - Svezia 64
FR - Francia 63
KR - Corea 50
RU - Federazione Russa 48
FI - Finlandia 34
IN - India 34
NL - Olanda 32
TW - Taiwan 22
ID - Indonesia 13
AR - Argentina 12
JP - Giappone 12
CA - Canada 11
IE - Irlanda 11
BG - Bulgaria 10
PL - Polonia 10
ES - Italia 9
UA - Ucraina 8
BD - Bangladesh 7
EC - Ecuador 7
MX - Messico 7
ZA - Sudafrica 7
AT - Austria 6
LT - Lituania 6
DK - Danimarca 5
RO - Romania 5
SA - Arabia Saudita 5
TR - Turchia 4
UZ - Uzbekistan 4
BE - Belgio 3
CL - Cile 3
CO - Colombia 3
CR - Costa Rica 3
GR - Grecia 3
IQ - Iraq 3
PE - Perù 3
CH - Svizzera 2
EG - Egitto 2
JO - Giordania 2
KE - Kenya 2
KW - Kuwait 2
MK - Macedonia 2
PH - Filippine 2
A2 - ???statistics.table.value.countryCode.A2??? 1
AE - Emirati Arabi Uniti 1
AL - Albania 1
AU - Australia 1
AZ - Azerbaigian 1
BO - Bolivia 1
BY - Bielorussia 1
CG - Congo 1
CZ - Repubblica Ceca 1
DZ - Algeria 1
HU - Ungheria 1
JM - Giamaica 1
LB - Libano 1
MY - Malesia 1
NG - Nigeria 1
NZ - Nuova Zelanda 1
PK - Pakistan 1
PY - Paraguay 1
RS - Serbia 1
SD - Sudan 1
SK - Slovacchia (Repubblica Slovacca) 1
TJ - Tagikistan 1
UY - Uruguay 1
VE - Venezuela 1
Totale 3.570
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Città #
Santa Clara 226
Singapore 212
Hong Kong 169
Hefei 166
Ashburn 128
Chandler 119
Fairfield 95
Milan 87
Nyköping 58
London 57
Modena 47
Los Angeles 43
Seoul 39
Cambridge 34
Beijing 33
Chicago 31
Padova 30
Helsinki 29
Seattle 24
Woodbridge 24
Boardman 22
Wilmington 22
Kent 21
San Diego 21
Ho Chi Minh City 20
Houston 20
New York 17
Ann Arbor 16
Hanoi 16
Moscow 16
Reggio Emilia 15
Buffalo 14
Munich 14
Council Bluffs 13
Princeton 13
Rome 13
Bologna 12
Bremen 12
Taipei 11
The Dalles 11
Turin 11
Brooklyn 10
Jakarta 10
Sofia 10
São Paulo 10
Dallas 9
Denver 9
Dublin 9
Formigine 9
Guangzhou 9
Hsinchu 9
Warsaw 9
Frankfurt am Main 8
Grafing 8
Assèmini 7
Montreal 7
Piacenza 7
Ravenna 7
Shanghai 7
Southend 7
Tokyo 7
Amsterdam 6
Bengaluru 6
Compiègne 6
Duncan 6
Marseille 6
Palermo 6
Paris 6
Reggio Nell'emilia 6
Stockholm 6
Daegu 5
Manchester 5
Padua 5
Redondo Beach 5
Salt Lake City 5
Vienna 5
Bari 4
Cagliari 4
Chennai 4
Columbus 4
Elk Grove Village 4
Haiphong 4
Kanpur 4
Kilburn 4
Laveno-Mombello 4
Montecchio Maggiore 4
Nuremberg 4
Orem 4
Parma 4
Perugia 4
Riccione 4
Rio de Janeiro 4
Shenzhen 4
Tashkent 4
Vicenza 4
Ankara 3
Bexley 3
Biên Hòa 3
Bonate Sopra 3
Bonate Sotto 3
Totale 2.324
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Nome #
GaN-based power devices: Physics, reliability, and perspectives 487
Electric Field and Self-Heating Effects on the Emission Time of Iron Traps in GaN HEMTs 246
Evaluation of VTH and RON Drifts during Switch-Mode Operation in Packaged SiC MOSFETs 239
Mechanisms Underlying the Bidirectional VT Shift After Negative-Bias Temperature Instability Stress in Carbon-Doped Fully Recessed AlGaN/GaN MIS-HEMTs 237
Experimental and numerical investigation of Poole-Frenkel effect on dynamic RON transients in C-doped p-GaN HEMTs 236
Caratterizzazione di Dispositivi di Potenza a Semiconduttore con Largo Band-Gap 209
Partial Recovery of Dynamic RON Versus OFF-State Stress Voltage in p-GaN Gate AlGaN/GaN Power HEMTs 209
Role of carbon in dynamic effects and reliability of 0.15-um AlGaN/GaN HEMTs for RF power amplifiers 191
Investigation on VTH and RON Slow/Fast Drifts in SiC MOSFETs 187
Gate-Bias Induced RON Instability in p-GaN Power HEMTs 154
Impact of Soft- and Hard-Switching transitions on VTH and RON Drifts in packaged SiC MOSFETs 144
Fe-Traps Influence on Time-dependent Breakdown Voltage in 0.1-μm GaN HEMTs for 5G Applications 141
A Novel Temperature Estimation Technique Exploiting Carrier Emission from Buffer Traps 139
Effect of Trap-Filling Bias on the Extraction of the Time Constant of Drain Current Transients in AlGaN/GaN HEMTs 138
Identification of Interface States responsible for VTHHysteresis in packaged SiC MOSFETs 135
Microwave and millimeter-wave GaN HEMTs: impact of epitaxial structure on short-channel effects, electron trapping and reliability 112
On the Dynamic RON, Vertical Leakage and Capacitance Behavior in pGaN HEMTs With Heavily Carbon-Doped Buffers 112
Unveiling the Role of Hole Barrier Traps on ON-Resistance Instability after Gate Bias Stress in p-GaN Power HEMTs 90
RON Degradation Mechanisms of ON-Wafer 100-V p-GaN HEMTs Emulating Monolithically Integrated Half-Bridge Circuits 72
On-Wafer RONDegradation Analysis of 100 v p-GaN HEMTs Emulating Low-and High-Side Operation in Half Bridge Circuits 72
Physical Modelling of Charge Trapping Effects 71
Totale 3.621
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Categoria #
all - tutte 16.749
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 16.749
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/2021215 0 0 0 0 0 0 0 18 47 14 59 77
2021/2022376 25 18 26 5 33 38 33 11 38 28 78 43
2022/2023438 38 36 36 31 41 42 12 62 65 11 40 24
2023/2024399 32 27 24 43 55 21 40 36 21 31 16 53
2024/20251.150 57 20 14 76 175 139 46 75 141 58 182 167
2025/20261.043 168 135 146 216 341 37 0 0 0 0 0 0
Totale 3.621