CIONI, MARCELLO
 Distribuzione geografica
Continente #
NA - Nord America 2.008
AS - Asia 1.688
EU - Europa 1.156
SA - Sud America 204
Continente sconosciuto - Info sul continente non disponibili 56
AF - Africa 27
OC - Oceania 2
Totale 5.141
Nazione #
US - Stati Uniti d'America 1.935
IT - Italia 569
SG - Singapore 497
CN - Cina 462
HK - Hong Kong 223
BR - Brasile 154
VN - Vietnam 135
GB - Regno Unito 129
DE - Germania 81
KR - Corea 80
BD - Bangladesh 76
FR - Francia 76
SE - Svezia 65
IN - India 59
RU - Federazione Russa 52
FI - Finlandia 43
TW - Taiwan 41
CA - Canada 37
NL - Olanda 35
JP - Giappone 24
AR - Argentina 18
ID - Indonesia 18
MX - Messico 14
PL - Polonia 14
ES - Italia 12
IE - Irlanda 12
BG - Bulgaria 11
EC - Ecuador 11
TR - Turchia 11
ZA - Sudafrica 11
UA - Ucraina 10
CR - Costa Rica 9
IQ - Iraq 9
CO - Colombia 7
LT - Lituania 7
UZ - Uzbekistan 7
AT - Austria 6
DK - Danimarca 6
SV - El Salvador 6
AE - Emirati Arabi Uniti 5
CL - Cile 5
MY - Malesia 5
PH - Filippine 5
RO - Romania 5
SA - Arabia Saudita 5
BE - Belgio 4
JO - Giordania 4
KE - Kenya 4
PK - Pakistan 4
CH - Svizzera 3
GR - Grecia 3
JM - Giamaica 3
KW - Kuwait 3
LB - Libano 3
PE - Perù 3
TH - Thailandia 3
BY - Bielorussia 2
DZ - Algeria 2
EG - Egitto 2
MD - Moldavia 2
MK - Macedonia 2
NP - Nepal 2
PY - Paraguay 2
TJ - Tagikistan 2
TT - Trinidad e Tobago 2
UY - Uruguay 2
A2 - ???statistics.table.value.countryCode.A2??? 1
AL - Albania 1
AO - Angola 1
AU - Australia 1
AZ - Azerbaigian 1
BH - Bahrain 1
BO - Bolivia 1
CG - Congo 1
CZ - Repubblica Ceca 1
DO - Repubblica Dominicana 1
ET - Etiopia 1
HN - Honduras 1
HU - Ungheria 1
IL - Israele 1
LK - Sri Lanka 1
LV - Lettonia 1
MA - Marocco 1
MN - Mongolia 1
MW - Malawi 1
NG - Nigeria 1
NZ - Nuova Zelanda 1
PT - Portogallo 1
RS - Serbia 1
SD - Sudan 1
SK - Slovacchia (Repubblica Slovacca) 1
TZ - Tanzania 1
VE - Venezuela 1
Totale 5.086
Città #
Singapore 303
Santa Clara 255
Ashburn 252
Hong Kong 206
Hefei 166
San Jose 141
Chandler 119
Milan 101
Fairfield 96
Council Bluffs 75
Los Angeles 69
Beijing 62
Seoul 62
Modena 58
Nyköping 58
London 57
Chicago 53
Cambridge 43
Helsinki 36
Ho Chi Minh City 36
Hanoi 33
New York 31
Padova 30
Boardman 25
Seattle 25
Woodbridge 24
The Dalles 23
Wilmington 23
Kent 22
Buffalo 21
Houston 21
San Diego 21
Rome 20
Taipei 18
Bologna 17
Dallas 17
Moscow 17
Reggio Emilia 17
Ann Arbor 16
Munich 14
Princeton 13
Bremen 12
Brooklyn 12
Denver 11
Frankfurt am Main 11
Guangzhou 11
Orem 11
São Paulo 11
Turin 11
Wallingford 11
Dublin 10
Hsinchu 10
Jakarta 10
Montreal 10
Sofia 10
Tokyo 10
Warsaw 10
Bengaluru 9
Chennai 9
Formigine 9
Paris 9
Ravenna 9
Shanghai 9
Warrington 9
Amsterdam 8
Grafing 8
Lauterbourg 8
Assèmini 7
Catania 7
Da Nang 7
Haiphong 7
Manchester 7
Marseille 7
Padua 7
Phoenix 7
Piacenza 7
Southend 7
Stockholm 7
Tashkent 7
Washington 7
Compiègne 6
Daegu 6
Duncan 6
Palermo 6
Parma 6
Reggio Nell'emilia 6
Salt Lake City 6
San José 6
San Salvador 6
Brantford 5
Cagliari 5
Columbus 5
Delhi 5
Elk Grove Village 5
Johannesburg 5
Madison 5
Mumbai 5
Redondo Beach 5
Toronto 5
Vienna 5
Totale 3.154
Nome #
GaN-based power devices: Physics, reliability, and perspectives 611
Partial Recovery of Dynamic RON Versus OFF-State Stress Voltage in p-GaN Gate AlGaN/GaN Power HEMTs 344
Evaluation of VTH and RON Drifts during Switch-Mode Operation in Packaged SiC MOSFETs 324
Experimental and numerical investigation of Poole-Frenkel effect on dynamic RON transients in C-doped p-GaN HEMTs 317
Electric Field and Self-Heating Effects on the Emission Time of Iron Traps in GaN HEMTs 313
Mechanisms Underlying the Bidirectional VT Shift After Negative-Bias Temperature Instability Stress in Carbon-Doped Fully Recessed AlGaN/GaN MIS-HEMTs 305
Caratterizzazione di Dispositivi di Potenza a Semiconduttore con Largo Band-Gap 286
Investigation on VTH and RON Slow/Fast Drifts in SiC MOSFETs 244
Role of carbon in dynamic effects and reliability of 0.15-um AlGaN/GaN HEMTs for RF power amplifiers 238
Identification of Interface States responsible for VTHHysteresis in packaged SiC MOSFETs 202
A Novel Temperature Estimation Technique Exploiting Carrier Emission from Buffer Traps 200
Fe-Traps Influence on Time-dependent Breakdown Voltage in 0.1-μm GaN HEMTs for 5G Applications 198
Effect of Trap-Filling Bias on the Extraction of the Time Constant of Drain Current Transients in AlGaN/GaN HEMTs 190
Gate-Bias Induced RON Instability in p-GaN Power HEMTs 187
Impact of Soft- and Hard-Switching transitions on VTH and RON Drifts in packaged SiC MOSFETs 174
On the Dynamic RON, Vertical Leakage and Capacitance Behavior in pGaN HEMTs With Heavily Carbon-Doped Buffers 170
Microwave and millimeter-wave GaN HEMTs: impact of epitaxial structure on short-channel effects, electron trapping and reliability 146
Analysis of Dynamic-Ron and VTH shift in on-wafer 100-V p-GaN HEMTs Emulating Monolithically Integrated Half-Bridge Circuits 142
Unveiling the Role of Hole Barrier Traps on ON-Resistance Instability after Gate Bias Stress in p-GaN Power HEMTs 140
Physical Modelling of Charge Trapping Effects 122
RON Degradation Mechanisms of ON-Wafer 100-V p-GaN HEMTs Emulating Monolithically Integrated Half-Bridge Circuits 117
On-Wafer RONDegradation Analysis of 100 v p-GaN HEMTs Emulating Low-and High-Side Operation in Half Bridge Circuits 113
Impact of OFF-State Stress on Dynamic RON of On-Wafer 100 V p-GaN HEMTs, Studied by Emulating Monolithically Integrated Half-Bridge Operation 58
Totale 5.141
Categoria #
all - tutte 21.493
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 21.493


Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2021/2022333 0 0 26 5 33 38 33 11 38 28 78 43
2022/2023438 38 36 36 31 41 42 12 62 65 11 40 24
2023/2024399 32 27 24 43 55 21 40 36 21 31 16 53
2024/20251.150 57 20 14 76 175 139 46 75 141 58 182 167
2025/20262.262 168 135 146 216 341 116 269 138 238 210 158 127
2026/2027301 72 122 107 0 0 0 0 0 0 0 0 0
Totale 5.141