RON and VTH drifts in TO-247 SiC packaged MOSFETs are investigated in this paper. The use of a novel on-the-fly measurement setup able to capture their variation over a 100µs to 1000s time range revealed the presence of two separated fast and slow mechanisms affecting the VTH and RON stability. Particularly, fast drain-induced mechanisms were found to negatively shift VTH, whereas no appreciable fast drifts were observed on RON. Conversely, slow drifts were found on both parameters, yielding a decrease in VTH and an RON increase. To investigate their origin, measurements were carried out for either i) different Duty Cycles and ii) several on-state current levels, proving that device self-heating (i.e., temperature increase) is responsible for the observed slow instabilities.
Investigation on VTH and RON Slow/Fast Drifts in SiC MOSFETs / Cioni, M.; Bertacchini, A.; Mucci, A.; Verzellesi, G.; Pavan, P.; Chini, A.. - (2021), pp. 1-5. (Intervento presentato al convegno IEEE International Reliability Physics Symposium (IRPS) tenutosi a Monterey, CA, USA nel 21-24 March 2021) [10.1109/IRPS46558.2021.9405231].
Investigation on VTH and RON Slow/Fast Drifts in SiC MOSFETs
Cioni, M.;Bertacchini, A.;Verzellesi, G.;Pavan, P.;Chini, A.
2021
Abstract
RON and VTH drifts in TO-247 SiC packaged MOSFETs are investigated in this paper. The use of a novel on-the-fly measurement setup able to capture their variation over a 100µs to 1000s time range revealed the presence of two separated fast and slow mechanisms affecting the VTH and RON stability. Particularly, fast drain-induced mechanisms were found to negatively shift VTH, whereas no appreciable fast drifts were observed on RON. Conversely, slow drifts were found on both parameters, yielding a decrease in VTH and an RON increase. To investigate their origin, measurements were carried out for either i) different Duty Cycles and ii) several on-state current levels, proving that device self-heating (i.e., temperature increase) is responsible for the observed slow instabilities.
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