MORASSI, LUCA
 Distribuzione geografica
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Continente #
NA - Nord America 1.409
EU - Europa 450
AS - Asia 187
Totale 2.046
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Nazione #
US - Stati Uniti d'America 1.408
GB - Regno Unito 178
DE - Germania 74
SE - Svezia 66
CN - Cina 63
TR - Turchia 63
UA - Ucraina 41
HK - Hong Kong 33
IT - Italia 32
SG - Singapore 18
BG - Bulgaria 15
FI - Finlandia 15
PT - Portogallo 10
RU - Federazione Russa 6
FR - Francia 5
IN - India 5
AT - Austria 3
IE - Irlanda 2
CA - Canada 1
CH - Svizzera 1
HU - Ungheria 1
IR - Iran 1
JP - Giappone 1
KR - Corea 1
MO - Macao, regione amministrativa speciale della Cina 1
PL - Polonia 1
TW - Taiwan 1
Totale 2.046
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Città #
Fairfield 215
Woodbridge 163
Southend 161
Ashburn 127
Chandler 110
Houston 95
Jacksonville 86
Ann Arbor 78
Seattle 77
Cambridge 70
Dearborn 68
Wilmington 64
Nyköping 60
Izmir 51
Hong Kong 33
Beijing 22
Princeton 21
San Diego 17
Modena 16
Bremen 15
Eugene 15
Sofia 15
Des Moines 11
Chicago 10
Grafing 10
Singapore 9
Boardman 8
London 7
Milan 7
Redwood City 6
Hefei 5
New York 5
Shanghai 5
Kunming 4
Pune 4
Indiana 3
Los Angeles 3
Mountain View 3
Chiswick 2
Cork 2
Correggio 2
Dresden 2
Frankfurt am Main 2
Grenoble 2
Helsinki 2
Jinan 2
Leawood 2
Mira 2
Nanjing 2
Pombal 2
Shenzhen 2
Varallo 2
Vienna 2
Acton 1
Ardabil 1
Budapest 1
Chaoyang 1
Chengdu 1
Chongqing 1
Dongguan 1
Falkenstein 1
Hounslow 1
Kilburn 1
Lausanne 1
Norwalk 1
Nürnberg 1
Pohang 1
Saint Louis 1
Saint Petersburg 1
Stanford 1
Taipei 1
Tianjin 1
Toronto 1
Torrance 1
Vellore 1
Verona 1
Warsaw 1
Wuhan 1
Totale 1.734
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Nome #
Influence of Buffer Carbon Doping on Pulse and AC Behavior of Insulated-Gate Field-Plated Power AlGaN/GaN HEMTs 177
Mechanism of high-k dielectric-induced breakdown of interfacial SiO2 layer 170
Engineering Barrier and Buffer Layers in InGaAs Quantum-Well MOSFETs 170
Connecting electrical and structural dielectric characteristics 170
A Physical Model for Post-Breakdown Digital Gate Current Noise 169
Analysis of interface-trap effects in inversion-type InGaAs/ZrO2 MOSFETs 164
Errors Limiting Split-CV Mobility Extraction Accuracy in Buried-Channel InGaAs MOSFETs 157
Comprehensive Capacitance-Voltage Simulation and Extraction Tool Including Quantum Effects for High-k on SixGe1-x and InxGa1-xAs: Part I-Model Description and Validation 126
Connecting electrical and structural dielectric characteristics 120
Advanced high-k materials and electrical analysis for memories: the role of SiO2-high-k dielectric intermixing 120
Comprehensive Capacitance-Voltage Simulation and Extraction Tool Including Quantum Effects for High-k on SixGe1-x and InxGa1-xAs: Part II-Fits and Extraction from Experimental Data 111
Interface-trap effects in inversion-type enhancement-mode InGaAs/ZrO2 n-channel MOSFETs 108
Experimental/numerical investigation of buried-channel InGaAs MOS-HEMTs with Al2O3 gate dielectric 105
Study of the Impact of Interface Traps on the Electrical Characteristics of InGaAs-based MOSFETs and MOSHEMTs with high-k Gate Dielectrics 104
Errors affecting split-CV mobility measurements in InGaAs MOS-HEMTs 93
Totale 2.064
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Categoria #
all - tutte 7.447
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 7.447
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2019/2020479 37 15 16 29 58 81 81 42 56 20 23 21
2020/2021370 33 15 30 32 24 23 47 43 38 45 18 22
2021/2022267 10 33 31 1 3 23 15 8 25 26 71 21
2022/2023284 21 29 32 17 45 53 2 30 37 0 6 12
2023/2024161 4 10 5 26 40 27 12 16 0 4 2 15
2024/202521 21 0 0 0 0 0 0 0 0 0 0 0
Totale 2.064