MORASSI, LUCA
 Distribuzione geografica
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Continente #
NA - Nord America 1318
EU - Europa 432
AS - Asia 105
Totale 1855
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Nazione #
US - Stati Uniti d'America 1317
GB - Regno Unito 171
DE - Germania 68
SE - Svezia 66
TR - Turchia 63
UA - Ucraina 41
CN - Cina 34
IT - Italia 28
BG - Bulgaria 15
FI - Finlandia 15
PT - Portogallo 10
RU - Federazione Russa 6
FR - Francia 5
AT - Austria 2
IE - Irlanda 2
SG - Singapore 2
BE - Belgio 1
CA - Canada 1
CH - Svizzera 1
HU - Ungheria 1
IN - India 1
IR - Iran 1
JP - Giappone 1
KR - Corea 1
MO - Macao, regione amministrativa speciale della Cina 1
TW - Taiwan 1
Totale 1855
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Città #
Fairfield 215
Woodbridge 163
Southend 161
Chandler 110
Houston 95
Jacksonville 86
Ashburn 82
Ann Arbor 78
Seattle 72
Cambridge 70
Dearborn 68
Wilmington 64
Nyköping 60
Izmir 51
Princeton 21
San Diego 17
Modena 16
Beijing 15
Bremen 15
Eugene 15
Sofia 15
Des Moines 11
Grafing 10
Redwood City 6
Hefei 5
London 5
Kunming 4
Indiana 3
Milan 3
Mountain View 3
Boardman 2
Cork 2
Correggio 2
Dresden 2
Grenoble 2
Helsinki 2
Jinan 2
Leawood 2
Los Angeles 2
Mira 2
Nanjing 2
New York 2
Pombal 2
Varallo 2
Vienna 2
Ardabil 1
Brussels 1
Budapest 1
Chaoyang 1
Chengdu 1
Chongqing 1
Lausanne 1
Norwalk 1
Nürnberg 1
Pohang 1
Saint Louis 1
Saint Petersburg 1
Shenzhen 1
Stanford 1
Taipei 1
Tianjin 1
Toronto 1
Torrance 1
Vellore 1
Verona 1
Totale 1589
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Nome #
Influence of Buffer Carbon Doping on Pulse and AC Behavior of Insulated-Gate Field-Plated Power AlGaN/GaN HEMTs 163
Engineering Barrier and Buffer Layers in InGaAs Quantum-Well MOSFETs 159
Connecting electrical and structural dielectric characteristics 158
Mechanism of high-k dielectric-induced breakdown of interfacial SiO2 layer 156
A Physical Model for Post-Breakdown Digital Gate Current Noise 155
Analysis of interface-trap effects in inversion-type InGaAs/ZrO2 MOSFETs 149
Errors Limiting Split-CV Mobility Extraction Accuracy in Buried-Channel InGaAs MOSFETs 138
Connecting electrical and structural dielectric characteristics 115
Comprehensive Capacitance-Voltage Simulation and Extraction Tool Including Quantum Effects for High-k on SixGe1-x and InxGa1-xAs: Part I-Model Description and Validation 111
Advanced high-k materials and electrical analysis for memories: the role of SiO2-high-k dielectric intermixing 107
Comprehensive Capacitance-Voltage Simulation and Extraction Tool Including Quantum Effects for High-k on SixGe1-x and InxGa1-xAs: Part II-Fits and Extraction from Experimental Data 99
Interface-trap effects in inversion-type enhancement-mode InGaAs/ZrO2 n-channel MOSFETs 96
Study of the Impact of Interface Traps on the Electrical Characteristics of InGaAs-based MOSFETs and MOSHEMTs with high-k Gate Dielectrics 94
Experimental/numerical investigation of buried-channel InGaAs MOS-HEMTs with Al2O3 gate dielectric 91
Errors affecting split-CV mobility measurements in InGaAs MOS-HEMTs 82
Totale 1873
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Categoria #
all - tutte 3840
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 3840
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2018/2019259 206016 1514 150 0216587
2019/2020479 37151629 5881 8142 56202321
2020/2021370 33153032 2423 4743 38451822
2021/2022267 1033311 323 158 25267121
2022/2023275 21293217 4553 230 37162
Totale 1873