MORASSI, LUCA
 Distribuzione geografica
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Continente #
NA - Nord America 2.085
AS - Asia 973
EU - Europa 635
SA - Sud America 104
AF - Africa 13
Totale 3.810
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Nazione #
US - Stati Uniti d'America 2.052
SG - Singapore 309
CN - Cina 246
GB - Regno Unito 217
HK - Hong Kong 145
DE - Germania 91
VN - Vietnam 86
BR - Brasile 80
SE - Svezia 70
TR - Turchia 67
IT - Italia 61
RU - Federazione Russa 52
UA - Ucraina 47
BD - Bangladesh 29
KR - Corea 29
FI - Finlandia 27
FR - Francia 23
CA - Canada 17
BG - Bulgaria 15
IN - India 15
IQ - Iraq 11
MX - Messico 11
PT - Portogallo 11
AR - Argentina 6
ID - Indonesia 6
ZA - Sudafrica 6
EC - Ecuador 5
PH - Filippine 5
PL - Polonia 5
IE - Irlanda 4
MY - Malesia 4
TW - Taiwan 4
VE - Venezuela 4
AT - Austria 3
JP - Giappone 3
PK - Pakistan 3
CH - Svizzera 2
CL - Cile 2
CO - Colombia 2
PE - Perù 2
PR - Porto Rico 2
TN - Tunisia 2
AE - Emirati Arabi Uniti 1
AL - Albania 1
BH - Bahrain 1
BO - Bolivia 1
CI - Costa d'Avorio 1
CR - Costa Rica 1
DO - Repubblica Dominicana 1
DZ - Algeria 1
ES - Italia 1
ET - Etiopia 1
HU - Ungheria 1
IR - Iran 1
JO - Giordania 1
KW - Kuwait 1
KZ - Kazakistan 1
LT - Lituania 1
MA - Marocco 1
MD - Moldavia 1
MO - Macao, regione amministrativa speciale della Cina 1
MR - Mauritania 1
NL - Olanda 1
PA - Panama 1
PY - Paraguay 1
QA - Qatar 1
RO - Romania 1
SA - Arabia Saudita 1
TH - Thailandia 1
UY - Uruguay 1
UZ - Uzbekistan 1
Totale 3.810
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Città #
Fairfield 215
Santa Clara 194
Ashburn 183
Singapore 172
Woodbridge 163
Southend 161
Hong Kong 145
Chandler 110
San Jose 110
Houston 99
Jacksonville 87
Ann Arbor 78
Seattle 77
Hefei 73
Cambridge 70
Dearborn 68
Wilmington 64
Nyköping 60
Izmir 52
The Dalles 44
London 41
Beijing 40
Chicago 37
Seoul 28
Ho Chi Minh City 25
Princeton 21
Los Angeles 19
Hanoi 18
Moscow 18
San Diego 17
Milan 16
Modena 16
Bremen 15
Eugene 15
Sofia 15
Council Bluffs 13
Shanghai 13
Helsinki 12
Lauterbourg 12
Buffalo 11
Columbus 11
Des Moines 11
Grafing 10
New York 9
Boardman 8
Salt Lake City 8
São Paulo 8
Frankfurt am Main 7
Munich 7
Brooklyn 6
Montreal 6
Redwood City 6
Toronto 6
Baghdad 5
Falkenstein 5
Warsaw 5
Atlanta 4
Da Nang 4
Guangzhou 4
Haiphong 4
Johannesburg 4
Kunming 4
Mexico City 4
Orem 4
Pune 4
Stockholm 4
Basra 3
Denver 3
Dhaka 3
Hải Dương 3
Indiana 3
Kansas City 3
Mountain View 3
Nanjing 3
San Francisco 3
Taipei 3
Thái Bình 3
Biên Hòa 2
Bắc Ninh 2
Caracas 2
Chiswick 2
Cork 2
Correggio 2
Dalian 2
Dallas 2
Dongguan 2
Dresden 2
Dublin 2
Elk Grove Village 2
Erbil 2
Grenoble 2
Guarapari 2
Jinan 2
Karachi 2
Kent 2
Kuala Lumpur 2
Kyiv 2
Leawood 2
Lima 2
Linfen 2
Totale 2.864
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Nome #
Analysis of interface-trap effects in inversion-type InGaAs/ZrO2 MOSFETs 301
A Physical Model for Post-Breakdown Digital Gate Current Noise 300
Mechanism of high-k dielectric-induced breakdown of interfacial SiO2 layer 294
Engineering Barrier and Buffer Layers in InGaAs Quantum-Well MOSFETs 286
Comprehensive Capacitance-Voltage Simulation and Extraction Tool Including Quantum Effects for High-k on SixGe1-x and InxGa1-xAs: Part II-Fits and Extraction from Experimental Data 271
Connecting electrical and structural dielectric characteristics 271
Influence of Buffer Carbon Doping on Pulse and AC Behavior of Insulated-Gate Field-Plated Power AlGaN/GaN HEMTs 267
Comprehensive Capacitance-Voltage Simulation and Extraction Tool Including Quantum Effects for High-k on SixGe1-x and InxGa1-xAs: Part I-Model Description and Validation 255
Errors Limiting Split-CV Mobility Extraction Accuracy in Buried-Channel InGaAs MOSFETs 254
Connecting electrical and structural dielectric characteristics 234
Advanced high-k materials and electrical analysis for memories: the role of SiO2-high-k dielectric intermixing 229
Interface-trap effects in inversion-type enhancement-mode InGaAs/ZrO2 n-channel MOSFETs 205
Experimental/numerical investigation of buried-channel InGaAs MOS-HEMTs with Al2O3 gate dielectric 200
Study of the Impact of Interface Traps on the Electrical Characteristics of InGaAs-based MOSFETs and MOSHEMTs with high-k Gate Dielectrics 195
Errors affecting split-CV mobility measurements in InGaAs MOS-HEMTs 184
Dispositivi MOSFET con Canale in InGaAs per l’Estensione della Tecnologia CMOS oltre il Nodo “16-nm" 83
Totale 3.829
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Categoria #
all - tutte 13.349
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 13.349
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/202122 0 0 0 0 0 0 0 0 0 0 0 22
2021/2022267 10 33 31 1 3 23 15 8 25 26 71 21
2022/2023284 21 29 32 17 45 53 2 30 37 0 6 12
2023/2024161 4 10 5 26 40 27 12 16 0 4 2 15
2024/2025722 32 7 1 48 142 89 57 29 97 34 97 89
2025/20261.064 74 73 76 80 183 86 113 40 125 71 94 49
Totale 3.829