DI LECCE, Valerio
 Distribuzione geografica
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Continente #
NA - Nord America 2.572
AS - Asia 1.029
EU - Europa 845
SA - Sud America 143
AF - Africa 18
OC - Oceania 1
Totale 4.608
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Nazione #
US - Stati Uniti d'America 2.556
SG - Singapore 339
CN - Cina 324
GB - Regno Unito 298
HK - Hong Kong 158
SE - Svezia 141
BR - Brasile 116
RU - Federazione Russa 84
DE - Germania 79
VN - Vietnam 69
UA - Ucraina 52
TR - Turchia 49
IT - Italia 47
FI - Finlandia 36
FR - Francia 36
BG - Bulgaria 25
KR - Corea 21
IN - India 18
PL - Polonia 13
ZA - Sudafrica 10
CA - Canada 9
AR - Argentina 8
BE - Belgio 8
IQ - Iraq 7
BD - Bangladesh 6
ID - Indonesia 6
EC - Ecuador 5
IE - Irlanda 5
NL - Olanda 5
TW - Taiwan 5
CO - Colombia 4
JP - Giappone 4
AE - Emirati Arabi Uniti 3
BO - Bolivia 3
ES - Italia 3
MA - Marocco 3
MX - Messico 3
PK - Pakistan 3
UZ - Uzbekistan 3
AL - Albania 2
DK - Danimarca 2
GA - Gabon 2
GR - Grecia 2
IL - Israele 2
JM - Giamaica 2
LT - Lituania 2
PA - Panama 2
PE - Perù 2
VE - Venezuela 2
AM - Armenia 1
AT - Austria 1
AU - Australia 1
AZ - Azerbaigian 1
BH - Bahrain 1
CL - Cile 1
EE - Estonia 1
ET - Etiopia 1
IR - Iran 1
JO - Giordania 1
KE - Kenya 1
KG - Kirghizistan 1
LV - Lettonia 1
MN - Mongolia 1
MY - Malesia 1
NO - Norvegia 1
NP - Nepal 1
PS - Palestinian Territory 1
PY - Paraguay 1
RO - Romania 1
SA - Arabia Saudita 1
SR - Suriname 1
TH - Thailandia 1
TN - Tunisia 1
Totale 4.608
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Città #
Santa Clara 286
Fairfield 261
Chandler 211
Singapore 195
Woodbridge 194
Ashburn 192
Southend 178
Hong Kong 158
Houston 141
Ann Arbor 114
Seattle 114
Jacksonville 105
Nyköping 105
Wilmington 101
Hefei 99
Cambridge 92
Dearborn 82
Beijing 58
London 55
Los Angeles 34
San Diego 29
Sofia 25
Princeton 23
Kent 20
New York 20
Council Bluffs 19
Eugene 19
Seoul 19
Ho Chi Minh City 18
Chicago 17
Hanoi 17
Helsinki 17
Izmir 16
Moscow 16
Buffalo 14
São Paulo 14
Des Moines 9
Munich 9
Shanghai 9
Warsaw 9
Brussels 8
Milan 8
Dallas 7
Frankfurt am Main 7
Bremen 6
Haiphong 6
Modena 6
Salt Lake City 6
Atlanta 5
Bengaluru 5
Dublin 5
Hounslow 5
Johannesburg 5
Redondo Beach 5
Rio de Janeiro 5
Biên Hòa 4
Brooklyn 4
Curitiba 4
Fuzhou 4
Lyon 4
Montreal 4
Norwalk 4
Quito 4
Redwood City 4
Saint Petersburg 4
The Dalles 4
Berlin 3
Boardman 3
Grafing 3
Guangzhou 3
Hải Dương 3
Indiana 3
Jakarta 3
Jinan 3
Nanjing 3
Osasco 3
Parma 3
Queens 3
San Francisco 3
San Mateo 3
Stockholm 3
Taipei 3
Tashkent 3
Tokyo 3
Wroclaw 3
Wuhan 3
Xian 3
Amsterdam 2
Ankara 2
Auburn Hills 2
Baghdad 2
Bangalore 2
Bethnal Green 2
Bexley 2
Bogotá 2
Bordeaux 2
Boston 2
Brasília 2
Calgary 2
Campinas 2
Totale 3.336
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Nome #
Comparison of Cu-gate and Ni/Au-gate GaN HEMTs large signal characteristics 260
Evaluation and Numerical Simulations of GaN HEMTs Electrical Degradation 256
The influence of interface states at the Schottky junction on the large signal behavior of copper-gate GaN HEMTs 254
Analysis of GaN HEMT Failure Mechanisms During DC and Large-Signal RF Operation 253
An Investigation of the Electrical Degradation of GaN High-Electron-Mobility Transistors by Numerical Simulations of DC Characteristics and Scattering Parameters 251
Study of GaN HEMTs electrical degradation by means of numerical simulations 250
Experimental and simulated dc degradation of GaN HEMTs by means of gate-drain and gate-source reverse bias stress 244
Experimental and numerical correlation between current-collapse and fe-doping profiles in GaN HEMTs 244
Correlation between DC and rf degradation due to deep levels in AlGaN/GaN HEMTs 242
Metal-oxide barrier extraction by Fowler-Nordheim tunnelling onset in Al2O3-on-GaN MOS diodes 230
Influence of interface states at Schottky junction on the large signal behaviour of Cu-gate standard AlGaN/GaN HEMTs 205
Design of field-plated InP-based HEMTs 203
Trapping phenomena in field-plated high power GaAs pHEMTs 195
Influence of RF drive and switching frequency on degradation mechanisms in GaN HEMTs 183
RF degradation of GaN HEMTs and its correlation with DC stress and I-DLTS measurements 161
Design of GaN HEMTs for Power Switching Operation 159
GaN Hemt Degradation induced by Reverse Gate Bias Stress 156
Study of GaN HEMTs degradation by numerical simulations of scattering parameters 153
Physical and circuit modeling of HfO2 based ferroelectric memories and devices 150
Reverse gate bias stress induced degradation of GaN HEMT 141
Multiscale modeling of neuromorphic computing: From materials to device operations 131
Multiscale Modeling of Ferroelectric Memories: Insights into Performances and Reliability 130
Built-In Bias Generation in Anti-Ferroelectric Stacks: Methods and Device Applications 126
Caratterizzazione e simulazione numerica di HEMT in GaN per applicazioni di potenza e innovative 62
Totale 4.639
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Categoria #
all - tutte 17.823
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 17.823
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/2021301 0 0 0 0 0 56 32 68 20 73 32 20
2021/2022393 9 70 26 9 4 17 25 11 37 27 110 48
2022/2023475 48 71 41 49 43 84 4 64 46 5 11 9
2023/2024240 9 13 19 31 66 14 14 46 8 1 2 17
2024/20251.012 29 8 7 85 193 128 56 95 115 14 106 176
2025/2026845 70 100 146 146 267 116 0 0 0 0 0 0
Totale 4.639