DI LECCE, Valerio
 Distribuzione geografica
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Continente #
NA - Nord America 2.983
AS - Asia 1.444
EU - Europa 943
SA - Sud America 171
Continente sconosciuto - Info sul continente non disponibili 31
AF - Africa 30
OC - Oceania 1
Totale 5.603
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Nazione #
US - Stati Uniti d'America 2.942
SG - Singapore 503
CN - Cina 349
GB - Regno Unito 306
VN - Vietnam 182
HK - Hong Kong 176
SE - Svezia 141
BR - Brasile 129
IT - Italia 92
RU - Federazione Russa 85
DE - Germania 82
FR - Francia 62
UA - Ucraina 52
TR - Turchia 50
FI - Finlandia 43
KR - Corea 39
IN - India 32
BD - Bangladesh 26
BG - Bulgaria 26
IQ - Iraq 18
CA - Canada 16
PL - Polonia 13
ZA - Sudafrica 13
MX - Messico 11
AR - Argentina 10
PK - Pakistan 10
CO - Colombia 9
BE - Belgio 8
AE - Emirati Arabi Uniti 6
EC - Ecuador 6
ID - Indonesia 6
JP - Giappone 6
NL - Olanda 6
TW - Taiwan 6
IE - Irlanda 5
PH - Filippine 5
JM - Giamaica 4
UZ - Uzbekistan 4
BO - Bolivia 3
CH - Svizzera 3
CL - Cile 3
EG - Egitto 3
ES - Italia 3
GA - Gabon 3
MA - Marocco 3
MY - Malesia 3
TN - Tunisia 3
UY - Uruguay 3
VE - Venezuela 3
AL - Albania 2
AT - Austria 2
AZ - Azerbaigian 2
BH - Bahrain 2
DK - Danimarca 2
GR - Grecia 2
HN - Honduras 2
IL - Israele 2
JO - Giordania 2
KE - Kenya 2
LB - Libano 2
LT - Lituania 2
PA - Panama 2
PE - Perù 2
PY - Paraguay 2
RO - Romania 2
SA - Arabia Saudita 2
TH - Thailandia 2
AM - Armenia 1
AU - Australia 1
BB - Barbados 1
BS - Bahamas 1
CI - Costa d'Avorio 1
CR - Costa Rica 1
DZ - Algeria 1
EE - Estonia 1
ET - Etiopia 1
GT - Guatemala 1
IR - Iran 1
KG - Kirghizistan 1
KH - Cambogia 1
KW - Kuwait 1
LV - Lettonia 1
MN - Mongolia 1
NO - Norvegia 1
NP - Nepal 1
PR - Porto Rico 1
PS - Palestinian Territory 1
PT - Portogallo 1
SR - Suriname 1
TL - Timor Orientale 1
TT - Trinidad e Tobago 1
Totale 5.572
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Città #
Singapore 297
Santa Clara 296
Ashburn 279
Fairfield 261
Chandler 211
Woodbridge 194
Southend 178
Hong Kong 174
Houston 141
Seattle 115
Ann Arbor 114
San Jose 109
Jacksonville 105
Nyköping 105
Wilmington 102
Hefei 99
Cambridge 92
Dearborn 82
Council Bluffs 75
Beijing 65
London 55
Ho Chi Minh City 53
Hanoi 50
Seoul 37
Los Angeles 35
San Diego 29
Sofia 25
Helsinki 24
Princeton 23
New York 22
Chicago 21
Kent 20
Eugene 19
Lauterbourg 19
The Dalles 19
Dallas 17
Milan 17
Izmir 16
Moscow 16
Buffalo 15
São Paulo 15
Shanghai 10
Columbus 9
Da Nang 9
Des Moines 9
Haiphong 9
Munich 9
Warsaw 9
Baghdad 8
Brussels 8
Frankfurt am Main 8
Modena 8
Biên Hòa 7
Johannesburg 7
Orem 7
Atlanta 6
Bremen 6
Miano 6
Salt Lake City 6
Wallingford 6
Bengaluru 5
Bogotá 5
Brooklyn 5
Dublin 5
Hounslow 5
Oakland 5
Quito 5
Redondo Beach 5
Rio de Janeiro 5
Rome 5
San Francisco 5
Curitiba 4
Fuzhou 4
Kingston 4
Lyon 4
Montreal 4
Mumbai 4
Newark 4
Norwalk 4
Redwood City 4
Saint Petersburg 4
Taipei 4
Tokyo 4
Turin 4
Berlin 3
Boardman 3
Bordeaux 3
Boston 3
Brasília 3
Campinas 3
Erbil 3
Gilbert 3
Grafing 3
Guangzhou 3
Hyderabad 3
Hải Dương 3
Indiana 3
Jakarta 3
Jinan 3
Libreville 3
Totale 3.943
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Nome #
Analysis of GaN HEMT Failure Mechanisms During DC and Large-Signal RF Operation 315
The influence of interface states at the Schottky junction on the large signal behavior of copper-gate GaN HEMTs 299
Experimental and simulated dc degradation of GaN HEMTs by means of gate-drain and gate-source reverse bias stress 299
Evaluation and Numerical Simulations of GaN HEMTs Electrical Degradation 298
Comparison of Cu-gate and Ni/Au-gate GaN HEMTs large signal characteristics 292
Experimental and numerical correlation between current-collapse and fe-doping profiles in GaN HEMTs 289
An Investigation of the Electrical Degradation of GaN High-Electron-Mobility Transistors by Numerical Simulations of DC Characteristics and Scattering Parameters 287
Study of GaN HEMTs electrical degradation by means of numerical simulations 278
Correlation between DC and rf degradation due to deep levels in AlGaN/GaN HEMTs 277
Metal-oxide barrier extraction by Fowler-Nordheim tunnelling onset in Al2O3-on-GaN MOS diodes 276
Influence of interface states at Schottky junction on the large signal behaviour of Cu-gate standard AlGaN/GaN HEMTs 250
Design of field-plated InP-based HEMTs 237
Trapping phenomena in field-plated high power GaAs pHEMTs 227
Influence of RF drive and switching frequency on degradation mechanisms in GaN HEMTs 223
Design of GaN HEMTs for Power Switching Operation 201
RF degradation of GaN HEMTs and its correlation with DC stress and I-DLTS measurements 200
GaN Hemt Degradation induced by Reverse Gate Bias Stress 193
Study of GaN HEMTs degradation by numerical simulations of scattering parameters 190
Multiscale Modeling of Ferroelectric Memories: Insights into Performances and Reliability 179
Reverse gate bias stress induced degradation of GaN HEMT 176
Physical and circuit modeling of HfO2 based ferroelectric memories and devices 176
Built-In Bias Generation in Anti-Ferroelectric Stacks: Methods and Device Applications 172
Multiscale modeling of neuromorphic computing: From materials to device operations 168
Caratterizzazione e simulazione numerica di HEMT in GaN per applicazioni di potenza e innovative 101
Totale 5.603
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Categoria #
all - tutte 21.330
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 21.330
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2021/2022314 0 0 26 9 4 17 25 11 37 27 110 48
2022/2023475 48 71 41 49 43 84 4 64 46 5 11 9
2023/2024240 9 13 19 31 66 14 14 46 8 1 2 17
2024/20251.012 29 8 7 85 193 128 56 95 115 14 106 176
2025/20261.626 70 100 146 146 267 116 209 86 165 167 109 45
2026/2027183 47 89 47 0 0 0 0 0 0 0 0 0
Totale 5.603