DI LECCE, Valerio
 Distribuzione geografica
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Continente #
NA - Nord America 1.915
EU - Europa 617
AS - Asia 198
SA - Sud America 2
OC - Oceania 1
Totale 2.733
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Nazione #
US - Stati Uniti d'America 1.915
GB - Regno Unito 243
SE - Svezia 127
CN - Cina 80
DE - Germania 63
HK - Hong Kong 60
UA - Ucraina 49
TR - Turchia 47
FI - Finlandia 36
IT - Italia 29
BG - Bulgaria 23
FR - Francia 17
RU - Federazione Russa 14
BE - Belgio 8
IN - India 5
IE - Irlanda 4
SG - Singapore 2
AU - Australia 1
BR - Brasile 1
DK - Danimarca 1
GR - Grecia 1
IL - Israele 1
KR - Corea 1
NL - Olanda 1
NO - Norvegia 1
PE - Perù 1
TW - Taiwan 1
VN - Vietnam 1
Totale 2.733
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Città #
Fairfield 261
Chandler 211
Woodbridge 194
Southend 178
Ashburn 149
Houston 140
Ann Arbor 114
Seattle 114
Jacksonville 105
Nyköping 105
Wilmington 99
Cambridge 92
Dearborn 82
Hong Kong 60
San Diego 29
Beijing 26
Princeton 23
Sofia 23
Eugene 19
Helsinki 17
Izmir 16
New York 10
Des Moines 9
Brussels 8
London 7
Bremen 6
Modena 6
Hounslow 5
Dublin 4
Hefei 4
Norwalk 4
Redwood City 4
Saint Petersburg 4
Berlin 3
Grafing 3
Indiana 3
Jinan 3
Los Angeles 3
Nanjing 3
Parma 3
San Mateo 3
Shanghai 3
Wuhan 3
Xian 3
Auburn Hills 2
Bangalore 2
Bethnal Green 2
Boardman 2
Bordeaux 2
Dongguan 2
Kilburn 2
Milan 2
Savona 2
Simi Valley 2
Trento 2
Americana 1
Amsterdam 1
Ankara 1
Atlanta 1
Baotou 1
Chengdu 1
Chicago 1
Copenhagen 1
Erlanger 1
Fremont 1
Fuzhou 1
Guangzhou 1
Hangzhou 1
Hanoi 1
Heraklion 1
Hyderabad 1
Istanbul 1
Jülich 1
Kemerovo 1
La Verriere 1
Lima 1
Magdeburg 1
Mehr 1
Mont-saint-aignan 1
Nanchang 1
Oslo 1
Padova 1
Palo Alto 1
Perm 1
Perth 1
Pessac-sur-Dordogne 1
Pisa 1
Rome 1
San Francisco 1
Santa Barbara 1
Scuola 1
Sheffield 1
Shenyang 1
Taipei 1
Tianjin 1
Turin 1
Vancouver 1
Verona 1
Zola Predosa 1
Ürümqi 1
Totale 2.228
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Nome #
Study of GaN HEMTs electrical degradation by means of numerical simulations 175
Experimental and simulated dc degradation of GaN HEMTs by means of gate-drain and gate-source reverse bias stress 171
Experimental and numerical correlation between current-collapse and fe-doping profiles in GaN HEMTs 171
Evaluation and Numerical Simulations of GaN HEMTs Electrical Degradation 168
Correlation between DC and rf degradation due to deep levels in AlGaN/GaN HEMTs 168
Metal-oxide barrier extraction by Fowler-Nordheim tunnelling onset in Al2O3-on-GaN MOS diodes 168
An Investigation of the Electrical Degradation of GaN High-Electron-Mobility Transistors by Numerical Simulations of DC Characteristics and Scattering Parameters 167
Analysis of GaN HEMT Failure Mechanisms During DC and Large-Signal RF Operation 164
Comparison of Cu-gate and Ni/Au-gate GaN HEMTs large signal characteristics 162
The influence of interface states at the Schottky junction on the large signal behavior of copper-gate GaN HEMTs 149
Influence of interface states at Schottky junction on the large signal behaviour of Cu-gate standard AlGaN/GaN HEMTs 127
Design of field-plated InP-based HEMTs 113
Trapping phenomena in field-plated high power GaAs pHEMTs 104
Influence of RF drive and switching frequency on degradation mechanisms in GaN HEMTs 101
RF degradation of GaN HEMTs and its correlation with DC stress and I-DLTS measurements 92
GaN Hemt Degradation induced by Reverse Gate Bias Stress 84
Design of GaN HEMTs for Power Switching Operation 84
Study of GaN HEMTs degradation by numerical simulations of scattering parameters 78
Reverse gate bias stress induced degradation of GaN HEMT 77
Physical and circuit modeling of HfO2 based ferroelectric memories and devices 69
Multiscale Modeling of Ferroelectric Memories: Insights into Performances and Reliability 61
Multiscale modeling of neuromorphic computing: From materials to device operations 56
Built-In Bias Generation in Anti-Ferroelectric Stacks: Methods and Device Applications 54
Totale 2.763
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Categoria #
all - tutte 9.923
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 9.923
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2018/2019158 0 0 0 0 0 0 0 0 0 0 98 60
2019/2020559 34 21 21 40 59 89 105 60 58 16 28 28
2020/2021524 37 26 28 34 98 56 32 68 20 73 32 20
2021/2022393 9 70 26 9 4 17 25 11 37 27 110 48
2022/2023475 48 71 41 49 43 84 4 64 46 5 11 9
2023/2024221 9 13 19 31 66 14 14 46 8 1 0 0
Totale 2.763