DI LECCE, Valerio
 Distribuzione geografica
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Continente #
NA - Nord America 2.583
AS - Asia 1.032
EU - Europa 846
SA - Sud America 144
AF - Africa 18
OC - Oceania 1
Totale 4.624
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Nazione #
US - Stati Uniti d'America 2.567
SG - Singapore 339
CN - Cina 326
GB - Regno Unito 298
HK - Hong Kong 158
SE - Svezia 141
BR - Brasile 117
RU - Federazione Russa 84
DE - Germania 79
VN - Vietnam 69
UA - Ucraina 52
TR - Turchia 49
IT - Italia 48
FI - Finlandia 36
FR - Francia 36
BG - Bulgaria 25
KR - Corea 21
IN - India 19
PL - Polonia 13
ZA - Sudafrica 10
CA - Canada 9
AR - Argentina 8
BE - Belgio 8
IQ - Iraq 7
BD - Bangladesh 6
ID - Indonesia 6
EC - Ecuador 5
IE - Irlanda 5
NL - Olanda 5
TW - Taiwan 5
CO - Colombia 4
JP - Giappone 4
AE - Emirati Arabi Uniti 3
BO - Bolivia 3
ES - Italia 3
MA - Marocco 3
MX - Messico 3
PK - Pakistan 3
UZ - Uzbekistan 3
AL - Albania 2
DK - Danimarca 2
GA - Gabon 2
GR - Grecia 2
IL - Israele 2
JM - Giamaica 2
LT - Lituania 2
PA - Panama 2
PE - Perù 2
VE - Venezuela 2
AM - Armenia 1
AT - Austria 1
AU - Australia 1
AZ - Azerbaigian 1
BH - Bahrain 1
CL - Cile 1
EE - Estonia 1
ET - Etiopia 1
IR - Iran 1
JO - Giordania 1
KE - Kenya 1
KG - Kirghizistan 1
LV - Lettonia 1
MN - Mongolia 1
MY - Malesia 1
NO - Norvegia 1
NP - Nepal 1
PS - Palestinian Territory 1
PY - Paraguay 1
RO - Romania 1
SA - Arabia Saudita 1
SR - Suriname 1
TH - Thailandia 1
TN - Tunisia 1
Totale 4.624
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Città #
Santa Clara 286
Fairfield 261
Chandler 211
Singapore 195
Woodbridge 194
Ashburn 192
Southend 178
Hong Kong 158
Houston 141
Ann Arbor 114
Seattle 114
Jacksonville 105
Nyköping 105
Wilmington 101
Hefei 99
Cambridge 92
Dearborn 82
Beijing 58
London 55
Los Angeles 34
San Diego 29
Sofia 25
Princeton 23
Kent 20
New York 20
Council Bluffs 19
Eugene 19
Seoul 19
Ho Chi Minh City 18
Chicago 17
Hanoi 17
Helsinki 17
Izmir 16
Moscow 16
São Paulo 15
Buffalo 14
San Jose 11
Des Moines 9
Munich 9
Shanghai 9
Warsaw 9
Brussels 8
Milan 8
Dallas 7
Frankfurt am Main 7
Bremen 6
Haiphong 6
Modena 6
Salt Lake City 6
Atlanta 5
Bengaluru 5
Dublin 5
Hounslow 5
Johannesburg 5
Redondo Beach 5
Rio de Janeiro 5
Biên Hòa 4
Brooklyn 4
Curitiba 4
Fuzhou 4
Lyon 4
Montreal 4
Norwalk 4
Quito 4
Redwood City 4
Saint Petersburg 4
The Dalles 4
Berlin 3
Boardman 3
Grafing 3
Guangzhou 3
Hải Dương 3
Indiana 3
Jakarta 3
Jinan 3
Nanjing 3
Osasco 3
Parma 3
Queens 3
San Francisco 3
San Mateo 3
Stockholm 3
Taipei 3
Tashkent 3
Tokyo 3
Wroclaw 3
Wuhan 3
Xian 3
Amsterdam 2
Ankara 2
Auburn Hills 2
Baghdad 2
Bangalore 2
Bethnal Green 2
Bexley 2
Bogotá 2
Bordeaux 2
Boston 2
Brasília 2
Calgary 2
Totale 3.346
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Nome #
Comparison of Cu-gate and Ni/Au-gate GaN HEMTs large signal characteristics 260
Evaluation and Numerical Simulations of GaN HEMTs Electrical Degradation 257
Analysis of GaN HEMT Failure Mechanisms During DC and Large-Signal RF Operation 255
The influence of interface states at the Schottky junction on the large signal behavior of copper-gate GaN HEMTs 254
An Investigation of the Electrical Degradation of GaN High-Electron-Mobility Transistors by Numerical Simulations of DC Characteristics and Scattering Parameters 252
Study of GaN HEMTs electrical degradation by means of numerical simulations 251
Experimental and simulated dc degradation of GaN HEMTs by means of gate-drain and gate-source reverse bias stress 245
Experimental and numerical correlation between current-collapse and fe-doping profiles in GaN HEMTs 244
Correlation between DC and rf degradation due to deep levels in AlGaN/GaN HEMTs 243
Metal-oxide barrier extraction by Fowler-Nordheim tunnelling onset in Al2O3-on-GaN MOS diodes 232
Influence of interface states at Schottky junction on the large signal behaviour of Cu-gate standard AlGaN/GaN HEMTs 206
Design of field-plated InP-based HEMTs 203
Trapping phenomena in field-plated high power GaAs pHEMTs 195
Influence of RF drive and switching frequency on degradation mechanisms in GaN HEMTs 184
RF degradation of GaN HEMTs and its correlation with DC stress and I-DLTS measurements 161
Design of GaN HEMTs for Power Switching Operation 160
GaN Hemt Degradation induced by Reverse Gate Bias Stress 156
Study of GaN HEMTs degradation by numerical simulations of scattering parameters 153
Physical and circuit modeling of HfO2 based ferroelectric memories and devices 151
Reverse gate bias stress induced degradation of GaN HEMT 141
Multiscale Modeling of Ferroelectric Memories: Insights into Performances and Reliability 131
Multiscale modeling of neuromorphic computing: From materials to device operations 131
Built-In Bias Generation in Anti-Ferroelectric Stacks: Methods and Device Applications 127
Caratterizzazione e simulazione numerica di HEMT in GaN per applicazioni di potenza e innovative 63
Totale 4.655
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Categoria #
all - tutte 17.932
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 17.932
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/2021245 0 0 0 0 0 0 32 68 20 73 32 20
2021/2022393 9 70 26 9 4 17 25 11 37 27 110 48
2022/2023475 48 71 41 49 43 84 4 64 46 5 11 9
2023/2024240 9 13 19 31 66 14 14 46 8 1 2 17
2024/20251.012 29 8 7 85 193 128 56 95 115 14 106 176
2025/2026861 70 100 146 146 267 116 16 0 0 0 0 0
Totale 4.655