DI LECCE, Valerio
 Distribuzione geografica
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Continente #
NA - Nord America 3.210
AS - Asia 1.448
EU - Europa 951
SA - Sud America 172
Continente sconosciuto - Info sul continente non disponibili 31
AF - Africa 30
OC - Oceania 1
Totale 5.843
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Nazione #
US - Stati Uniti d'America 3.160
SG - Singapore 503
CN - Cina 349
GB - Regno Unito 308
VN - Vietnam 182
HK - Hong Kong 176
SE - Svezia 141
BR - Brasile 129
IT - Italia 96
RU - Federazione Russa 85
DE - Germania 83
FR - Francia 62
UA - Ucraina 52
TR - Turchia 50
FI - Finlandia 43
KR - Corea 41
IN - India 33
BD - Bangladesh 26
BG - Bulgaria 26
CA - Canada 18
IQ - Iraq 18
PL - Polonia 13
ZA - Sudafrica 13
MX - Messico 12
AR - Argentina 10
PK - Pakistan 10
CO - Colombia 9
BE - Belgio 8
EC - Ecuador 7
NL - Olanda 7
AE - Emirati Arabi Uniti 6
ID - Indonesia 6
JP - Giappone 6
TW - Taiwan 6
IE - Irlanda 5
JM - Giamaica 5
PH - Filippine 5
UZ - Uzbekistan 4
BO - Bolivia 3
CH - Svizzera 3
CL - Cile 3
CR - Costa Rica 3
EG - Egitto 3
ES - Italia 3
GA - Gabon 3
IL - Israele 3
MA - Marocco 3
MY - Malesia 3
TN - Tunisia 3
UY - Uruguay 3
VE - Venezuela 3
AL - Albania 2
AT - Austria 2
AZ - Azerbaigian 2
BH - Bahrain 2
BS - Bahamas 2
DK - Danimarca 2
GR - Grecia 2
HN - Honduras 2
JO - Giordania 2
KE - Kenya 2
LB - Libano 2
LT - Lituania 2
PA - Panama 2
PE - Perù 2
PY - Paraguay 2
RO - Romania 2
SA - Arabia Saudita 2
TH - Thailandia 2
TT - Trinidad e Tobago 2
AM - Armenia 1
AU - Australia 1
BB - Barbados 1
CI - Costa d'Avorio 1
DZ - Algeria 1
EE - Estonia 1
ET - Etiopia 1
GP - Guadalupe 1
GT - Guatemala 1
IR - Iran 1
KG - Kirghizistan 1
KH - Cambogia 1
KW - Kuwait 1
LV - Lettonia 1
MN - Mongolia 1
NO - Norvegia 1
NP - Nepal 1
PR - Porto Rico 1
PS - Palestinian Territory 1
PT - Portogallo 1
SR - Suriname 1
TL - Timor Orientale 1
Totale 5.812
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Città #
Ashburn 338
Santa Clara 305
Singapore 297
Fairfield 261
Chandler 211
Woodbridge 194
Southend 178
Hong Kong 174
Houston 141
San Jose 124
Seattle 118
Ann Arbor 114
Jacksonville 105
Nyköping 105
Council Bluffs 102
Wilmington 102
Hefei 99
Cambridge 92
Dearborn 82
Beijing 65
London 55
Ho Chi Minh City 53
Hanoi 50
Seoul 38
Los Angeles 35
San Diego 30
New York 28
Sofia 25
Helsinki 24
Princeton 23
Chicago 21
Kent 20
Dallas 19
Eugene 19
Lauterbourg 19
The Dalles 19
Milan 17
Izmir 16
Moscow 16
Buffalo 15
São Paulo 15
Columbus 11
Shanghai 10
Da Nang 9
Des Moines 9
Haiphong 9
Munich 9
Warsaw 9
Baghdad 8
Brussels 8
Frankfurt am Main 8
Modena 8
Biên Hòa 7
Johannesburg 7
Orem 7
Atlanta 6
Bremen 6
Miano 6
Quito 6
Salt Lake City 6
Wallingford 6
Bengaluru 5
Bogotá 5
Brooklyn 5
Dublin 5
Hounslow 5
Kingston 5
Newark 5
Oakland 5
Queens 5
Redondo Beach 5
Rio de Janeiro 5
Rome 5
Saint Augustine 5
San Francisco 5
Berlin 4
Curitiba 4
Fuzhou 4
Lyon 4
Montreal 4
Mumbai 4
Norwalk 4
Redwood City 4
Saint Petersburg 4
Taipei 4
Tokyo 4
Turin 4
Washington 4
Amsterdam 3
Boardman 3
Bordeaux 3
Boston 3
Brasília 3
Campinas 3
Erbil 3
Gilbert 3
Grafing 3
Guangzhou 3
Hyderabad 3
Hải Dương 3
Totale 4.077
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Nome #
Analysis of GaN HEMT Failure Mechanisms During DC and Large-Signal RF Operation 336
Experimental and simulated dc degradation of GaN HEMTs by means of gate-drain and gate-source reverse bias stress 309
The influence of interface states at the Schottky junction on the large signal behavior of copper-gate GaN HEMTs 308
Experimental and numerical correlation between current-collapse and fe-doping profiles in GaN HEMTs 305
Evaluation and Numerical Simulations of GaN HEMTs Electrical Degradation 304
An Investigation of the Electrical Degradation of GaN High-Electron-Mobility Transistors by Numerical Simulations of DC Characteristics and Scattering Parameters 304
Comparison of Cu-gate and Ni/Au-gate GaN HEMTs large signal characteristics 303
Correlation between DC and rf degradation due to deep levels in AlGaN/GaN HEMTs 289
Study of GaN HEMTs electrical degradation by means of numerical simulations 285
Metal-oxide barrier extraction by Fowler-Nordheim tunnelling onset in Al2O3-on-GaN MOS diodes 283
Influence of interface states at Schottky junction on the large signal behaviour of Cu-gate standard AlGaN/GaN HEMTs 256
Design of field-plated InP-based HEMTs 243
Trapping phenomena in field-plated high power GaAs pHEMTs 230
Influence of RF drive and switching frequency on degradation mechanisms in GaN HEMTs 228
RF degradation of GaN HEMTs and its correlation with DC stress and I-DLTS measurements 212
GaN Hemt Degradation induced by Reverse Gate Bias Stress 204
Design of GaN HEMTs for Power Switching Operation 203
Study of GaN HEMTs degradation by numerical simulations of scattering parameters 195
Multiscale Modeling of Ferroelectric Memories: Insights into Performances and Reliability 195
Physical and circuit modeling of HfO2 based ferroelectric memories and devices 187
Built-In Bias Generation in Anti-Ferroelectric Stacks: Methods and Device Applications 184
Multiscale modeling of neuromorphic computing: From materials to device operations 180
Reverse gate bias stress induced degradation of GaN HEMT 179
Caratterizzazione e simulazione numerica di HEMT in GaN per applicazioni di potenza e innovative 121
Totale 5.843
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Categoria #
all - tutte 22.389
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 22.389
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2021/2022279 0 0 0 0 4 17 25 11 37 27 110 48
2022/2023475 48 71 41 49 43 84 4 64 46 5 11 9
2023/2024240 9 13 19 31 66 14 14 46 8 1 2 17
2024/20251.012 29 8 7 85 193 128 56 95 115 14 106 176
2025/20261.626 70 100 146 146 267 116 209 86 165 167 109 45
2026/2027423 47 89 121 160 6 0 0 0 0 0 0 0
Totale 5.843