GaN HEMT degradation induced by reverse gate bias stress methods has been investigated by means of experimental measurements. Experimental data will be presented and discussed.
Reverse gate bias stress induced degradation of GaN HEMT / Zanoni, E.; Meneghini, M.; Tazzoli, A.; Ronchi, N.; Stocco, A.; DI LECCE, Valerio; Esposto, Michele; Chini, Alessandro; Meneghesso, G.. - (2009), pp. 219-220. ( 36th International Symposium on Compound Semiconductors (ISCS 2009) Santa Barbara, CA (USA) August 30–September 2, 2009).
Reverse gate bias stress induced degradation of GaN HEMT
DI LECCE, Valerio;ESPOSTO, Michele;CHINI, Alessandro;
2009
Abstract
GaN HEMT degradation induced by reverse gate bias stress methods has been investigated by means of experimental measurements. Experimental data will be presented and discussed.
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