In this paper, a study of the dependence of the transconductance gm on the trap concentration and on the length of the trapping region is carried out by means of numerical simulations, and particular attention is dedicated to the correlation between gm and the device AC performance by simulation of scattering parameters.
Study of GaN HEMTs degradation by numerical simulations of scattering parameters / DI LECCE, Valerio; Esposto, Michele; Bonaiuti, M.; Meneghesso, G.; Zanoni, E.; Fantini, Fausto; Chini, Alessandro. - (2010). (Intervento presentato al convegno 19th European Workshop on Heterostructure Technology - HETECH 2010 tenutosi a Fodele, Crete nel 18-20 October 2010).
Study of GaN HEMTs degradation by numerical simulations of scattering parameters
DI LECCE, Valerio;ESPOSTO, Michele;FANTINI, Fausto;CHINI, Alessandro
2010
Abstract
In this paper, a study of the dependence of the transconductance gm on the trap concentration and on the length of the trapping region is carried out by means of numerical simulations, and particular attention is dedicated to the correlation between gm and the device AC performance by simulation of scattering parameters.
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