DI LECCE, Valerio
 Distribuzione geografica
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Continente #
EU - Europa 5
NA - Nord America 3
AS - Asia 1
Totale 9
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Nazione #
IT - Italia 4
US - Stati Uniti d'America 3
CN - Cina 1
DE - Germania 1
Totale 9
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Città #
Modena 4
Ashburn 2
Cedar Knolls 1
Dresden 1
Hangzhou 1
Totale 9
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Nome #
Built-In Bias Generation in Anti-Ferroelectric Stacks: Methods and Device Applications, file 55dd4c50-5579-4828-97aa-a0efac3fef66 5
Influence of interface states at Schottky junction on the large signal behaviour of Cu-gate standard AlGaN/GaN HEMTs, file e31e124b-b8a1-987f-e053-3705fe0a095a 1
Influence of RF drive and switching frequency on degradation mechanisms in GaN HEMTs, file e31e124b-bcd2-987f-e053-3705fe0a095a 1
Design of GaN HEMTs for Power Switching Operation, file e31e124b-bf35-987f-e053-3705fe0a095a 1
Study of GaN HEMTs degradation by numerical simulations of scattering parameters, file e31e124b-bfec-987f-e053-3705fe0a095a 1
Totale 9
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Categoria #
all - tutte 217
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 217
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2022/20232 0 0 0 0 0 0 0 0 0 1 1 0
2023/20243 0 0 0 1 0 0 0 0 0 2 0 0
Totale 9