statistiche ricercatore

Continente	#
NA - Nord America	1.757
AS - Asia	599
EU - Europa	586
SA - Sud America	84
AF - Africa	11
Continente sconosciuto - Info sul continente non disponibili	1
OC - Oceania	1
Totale	3.039

Nazione	#
US - Stati Uniti d'America	1.741
CN - Cina	189
SG - Singapore	186
GB - Regno Unito	175
HK - Hong Kong	103
IT - Italia	94
DE - Germania	80
BR - Brasile	62
SE - Svezia	57
RU - Federazione Russa	40
FI - Finlandia	37
UA - Ucraina	33
VN - Vietnam	32
TR - Turchia	28
FR - Francia	15
AR - Argentina	14
BG - Bulgaria	14
KR - Corea	14
CA - Canada	12
IN - India	9
PT - Portogallo	9
JP - Giappone	8
NL - Olanda	6
ZA - Sudafrica	6
ID - Indonesia	5
BD - Bangladesh	4
IR - Iran	4
AT - Austria	3
BE - Belgio	3
CH - Svizzera	3
IE - Irlanda	3
CO - Colombia	2
EC - Ecuador	2
EG - Egitto	2
ES - Italia	2
LT - Lituania	2
PE - Perù	2
PL - Polonia	2
TW - Taiwan	2
UZ - Uzbekistan	2
AD - Andorra	1
AL - Albania	1
AM - Armenia	1
AU - Australia	1
AZ - Azerbaigian	1
BH - Bahrain	1
CI - Costa d'Avorio	1
CR - Costa Rica	1
CW - ???statistics.table.value.countryCode.CW???	1
CY - Cipro	1
CZ - Repubblica Ceca	1
DK - Danimarca	1
GT - Guatemala	1
IM - Isola di Man	1
IQ - Iraq	1
JO - Giordania	1
KG - Kirghizistan	1
KW - Kuwait	1
KZ - Kazakistan	1
LK - Sri Lanka	1
LU - Lussemburgo	1
MA - Marocco	1
MD - Moldavia	1
MX - Messico	1
PK - Pakistan	1
RO - Romania	1
SA - Arabia Saudita	1
SN - Senegal	1
TH - Thailandia	1
TT - Trinidad e Tobago	1
UY - Uruguay	1
VE - Venezuela	1
Totale	3.039

Nome	#
Combined Effects of LED Lights and chicken manure on Neochloris oleoabundans Growth	429
Progresses in Modeling HfOx RRAM Operations and Variability	291
Leakage current through the poly-crystalline HfO2: trap densities at grains and grain boundaries	272
Experimental and Theoretical Study of Electrode Effects in HfO2 based RRAM	265
A Novel Electronic Nose as Adaptable Device to Judge Microbiological Quality and Safety in Foodstuff	261
Microscopic Modeling of HfOₓ RRAM Operations: From Forming to Switching	234
Microscopic understanding and modeling of HfO2 RRAM device physics	231
Multi-scale modeling of oxygen vacancies assisted charge transport in sub-stoichiometric TiOx for RRAM application	227
Investigation of the role of electrodes on the retention performance of HfOx based RRAM cells by experiments, atomistic simulations and device physical modeling	220
Temperature impact (up to 200 °C) on performance and reliability of HfO2-based RRAMs	210
Controlling Uniformity of RRAM Characteristics via the Forming Process	164
Modeling the charge transport and degradation in HfO 2 dielectric for reliability improvement and life-time predictions in logic and memory devices	144
Controlling uniformity of RRAM characteristics through the forming process	120
Totale	3.068

	Totale	Lug	Ago	Sett	Ott	Nov	Dic	Gen	Feb	Mar	Apr	Mag	Giu
2020/2021	175	0	0	0	0	0	0	21	36	22	43	28	25
2021/2022	305	52	18	17	14	3	28	11	18	21	37	60	26
2022/2023	266	24	46	18	27	26	48	2	35	21	2	11	6
2023/2024	181	6	12	8	20	47	28	23	19	0	4	1	13
2024/2025	600	36	6	4	42	110	78	35	44	64	21	64	96
2025/2026	526	58	27	73	73	204	65	26	0	0	0	0	0
Totale													3.068