The proposed constant voltage forming (CVF) is shown to increase the resistances of the low resistance and high resistance states while reducing their variability. By forcing the forming in all devices to occur at the same predefined voltage,the CVF method eliminates a major cause of the device-to-device variation associated with the randomness of the forming voltage values. Moreover,both experiments and simulations show that CVF at lower voltages suppresses the parasitic overshoot current,resulting in a more controlled and smaller filament cross-section and lower operation currents.
Controlling Uniformity of RRAM Characteristics via the Forming Process / A., Kalantarian; G., Bersuker; D. C., Gilmer; D., Veksler; B., Butcher; Padovani, Andrea; Pirrotta, Onofrio; Larcher, Luca; P., Kirsch; Y., Nishi. - ELETTRONICO. - (2012), pp. 6C.4.1-6C.4.5. ((Intervento presentato al convegno IEEE International Reliability Physics Symposium tenutosi a Anaheim (CA), USA nel Aprile 15-19, 2012.
Controlling Uniformity of RRAM Characteristics via the Forming Process
PADOVANI, ANDREA;PIRROTTA, Onofrio;LARCHER, Luca;
2012-01-01
Abstract
The proposed constant voltage forming (CVF) is shown to increase the resistances of the low resistance and high resistance states while reducing their variability. By forcing the forming in all devices to occur at the same predefined voltage,the CVF method eliminates a major cause of the device-to-device variation associated with the randomness of the forming voltage values. Moreover,both experiments and simulations show that CVF at lower voltages suppresses the parasitic overshoot current,resulting in a more controlled and smaller filament cross-section and lower operation currents.
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