Sfoglia per Autore
Modeling Temperature Dependency (6 - 400K) of the Leakage Current Through the SiO2/High-K Stacks
2010 Vandelli, Luca; Padovani, Andrea; Larcher, Luca; G., Bersuker; R. G., Southwick III; W. B., Knowlton
Metal oxide RRAM switching mechanism based on conductive filament microscopic properties
2010 G., Bersuker; D. C., Gilmer; D., Veksler; J., Yum; H., Park; S., Lian; Vandelli, Luca; Padovani, Andrea; Larcher, Luca; K., Mckenna; A., Shluger; V., Iglesias; M., Porti; M., Nafría; W., Taylor; P. D., Kirsch; R., Jammy
Role of Holes and Electrons During Erase of TANOS Memories: Evidences for Dipole Formation and its Impact on Reliability
2010 Vandelli, Luca; Padovani, Andrea; Larcher, Luca; Antonio, Arreghini; Geert Van den, Bosch; Malgorzata, Jurczak; Jan Van, Houdt; Vincenzo Della, Marca; Pavan, Paolo
Experimental assessment of electrons and holes in erase transient of TANOS and TANVaS memories
2010 A., Suhane; A., Arreghini; G., Van den bosch; Vandelli, Luca; Padovani, Andrea; L., Breuil; Larcher, Luca; K., De Meyer; J., Van Houdt
Modeling the charge transport and degradation in HfO 2 dielectric for reliability improvement and life-time predictions in logic and memory devices
2011 Padovani, Andrea; Larcher, Luca; Vandelli, Luca; Pirrotta, Onofrio; Pavan, Paolo
Low Power RRAM with Improved HRS/LRS Uniformity through Efficient Filament Control Using CVS Forming
2011 A., Kalantarian; G., Bersuker; D. C., Gilmer; B., Butcher; Padovani, Andrea; Vandelli, Luca; Larcher, Luca; R., Geer; Y., Nishi; P., Kirsch
A Physical model of the temperature dependence of the current through SiO2/HfO2 stacks
2011 Vandelli, Luca; Padovani, Andrea; Larcher, Luca; R. G., Southwick III; W. B., Knowlton; G., Bersuker
Modeling of the forming operation in HfO2-base resistive switching memories
2011 Vandelli, Luca; Padovani, Andrea; Larcher, Luca; G., Bersuker; D., Gilmer; Pavan, Paolo
A Comprehensive Understanding of the Erase of TANOS Memories Through Charge Separation Experiments and Simulations
2011 Padovani, Andrea; A., Arreghini; Vandelli, Luca; Larcher, Luca; G., Van den Bosh; Pavan, Paolo; J., Van Houdt
A Physics-Based Model of the Dielectric Breakdown in HfO2 for Statistical Reliability Prediction
2011 Vandelli, Luca; G., Bersuker; Padovani, Andrea; J. H., Yum; Larcher, Luca; Pavan, Paolo
Metal oxide resistive memory switching mechanism based on conductive filament properties
2011 G., Bersuker; D. C., Gilmer; D., Veksler; P., Kirsch; Vandelli, Luca; Padovani, Andrea; Larcher, Luca; K., Mckenna; A., Shluger; V., Iglesias; M., Porti; M., Nafría
Grain boundary-driven leakage path formation in HfO2 dielectrics
2011 G., Bersuker; J., Yum; Vandelli, Luca; Padovani, Andrea; Larcher, Luca; V., Iglesias; M., Porti; M., Nafría; K., Mckenna; A., Shluger; P., Kirsch; R., Jammy
Comprehensive physical modeling of forming and switching operations in HfO2 RRAM devices
2011 Vandelli, Luca; Padovani, Andrea; Larcher, Luca; G., Broglia; G., Ori; Montorsi, Monia; G., Bersuker; Pavan, Paolo
Physical modeling of charge transport and degradation in HfO 2 stacks for logic device and memory applications
2011 Larcher, Luca; Padovani, Andrea; Vandelli, Luca; G., Bersuker
Threshold Shift Observed in Resistive Switching in Metal-Oxide-Semiconductor Transistors and the Effect of Forming Gas Anneal
2011 W. H., Liu; K. L., Pey; X., Wu; N., Raghavan; Padovani, Andrea; Larcher, Luca; Vandelli, Luca; M., Bosman; T., Kauerauf
Charge transport in high-k stacks for charge-trapping memory applications: A modeling perspective (invited)
2011 Larcher, Luca; Padovani, Andrea; Vandelli, Luca; Pavan, Paolo
Experimental and Theoretical Study of Electrode Effects in HfO2 based RRAM
2011 C., Cagli; J., Buckley; V., Jousseaume; A., Salaun; H., Grampeix; J. F., Nodin; H., Feldis; A., Persico; J., Cluzel; P., Lorenzi; L., Massari; R., Rao; F., Irrera; T., Cabout; F., Aussenac; C., Carabasse; M., Coue; P., Calka; E., Martinez; L., Perniola; P., Blaise; Z., Fang; Y. H., Yu; G., Ghibaudo; D., Deleruyelle; M., Bocquet; C., Muller; Padovani, Andrea; Pirrotta, Onofrio; Vandelli, Luca; Larcher, Luca; G., Reimbold; B., de Salvo
Microscopic understanding and modeling of HfO2 RRAM device physics
2012 Larcher, Luca; Padovani, Andrea; Pirrotta, Onofrio; Vandelli, Luca; G., Bersuker
Evidences for vertical charge dipole formation in charge-trapping memories and its impact on reliability
2012 Padovani, Andrea; A., Arreghini; Vandelli, Luca; Larcher, Luca; G., Van den bosch; J., Van Houdt
Modeling the Effects of Different Forming Conditions on RRAM Conductive Filament Stability
2013 B., Butcher; G., Bersuker; Vandelli, Luca; Padovani, Andrea; Larcher, Luca; A., Kalantarian; R., Geer; D. C., Gilmer
Titolo | Data di pubblicazione | Autore(i) | File |
---|---|---|---|
Modeling Temperature Dependency (6 - 400K) of the Leakage Current Through the SiO2/High-K Stacks | 1-gen-2010 | Vandelli, Luca; Padovani, Andrea; Larcher, Luca; G., Bersuker; R. G., Southwick III; W. B., Knowlton | |
Metal oxide RRAM switching mechanism based on conductive filament microscopic properties | 1-gen-2010 | G., Bersuker; D. C., Gilmer; D., Veksler; J., Yum; H., Park; S., Lian; Vandelli, Luca; Padovani, Andrea; Larcher, Luca; K., Mckenna; A., Shluger; V., Iglesias; M., Porti; M., Nafría; W., Taylor; P. D., Kirsch; R., Jammy | |
Role of Holes and Electrons During Erase of TANOS Memories: Evidences for Dipole Formation and its Impact on Reliability | 1-gen-2010 | Vandelli, Luca; Padovani, Andrea; Larcher, Luca; Antonio, Arreghini; Geert Van den, Bosch; Malgorzata, Jurczak; Jan Van, Houdt; Vincenzo Della, Marca; Pavan, Paolo | |
Experimental assessment of electrons and holes in erase transient of TANOS and TANVaS memories | 1-gen-2010 | A., Suhane; A., Arreghini; G., Van den bosch; Vandelli, Luca; Padovani, Andrea; L., Breuil; Larcher, Luca; K., De Meyer; J., Van Houdt | |
Modeling the charge transport and degradation in HfO 2 dielectric for reliability improvement and life-time predictions in logic and memory devices | 1-gen-2011 | Padovani, Andrea; Larcher, Luca; Vandelli, Luca; Pirrotta, Onofrio; Pavan, Paolo | |
Low Power RRAM with Improved HRS/LRS Uniformity through Efficient Filament Control Using CVS Forming | 1-gen-2011 | A., Kalantarian; G., Bersuker; D. C., Gilmer; B., Butcher; Padovani, Andrea; Vandelli, Luca; Larcher, Luca; R., Geer; Y., Nishi; P., Kirsch | |
A Physical model of the temperature dependence of the current through SiO2/HfO2 stacks | 1-gen-2011 | Vandelli, Luca; Padovani, Andrea; Larcher, Luca; R. G., Southwick III; W. B., Knowlton; G., Bersuker | |
Modeling of the forming operation in HfO2-base resistive switching memories | 1-gen-2011 | Vandelli, Luca; Padovani, Andrea; Larcher, Luca; G., Bersuker; D., Gilmer; Pavan, Paolo | |
A Comprehensive Understanding of the Erase of TANOS Memories Through Charge Separation Experiments and Simulations | 1-gen-2011 | Padovani, Andrea; A., Arreghini; Vandelli, Luca; Larcher, Luca; G., Van den Bosh; Pavan, Paolo; J., Van Houdt | |
A Physics-Based Model of the Dielectric Breakdown in HfO2 for Statistical Reliability Prediction | 1-gen-2011 | Vandelli, Luca; G., Bersuker; Padovani, Andrea; J. H., Yum; Larcher, Luca; Pavan, Paolo | |
Metal oxide resistive memory switching mechanism based on conductive filament properties | 1-gen-2011 | G., Bersuker; D. C., Gilmer; D., Veksler; P., Kirsch; Vandelli, Luca; Padovani, Andrea; Larcher, Luca; K., Mckenna; A., Shluger; V., Iglesias; M., Porti; M., Nafría | |
Grain boundary-driven leakage path formation in HfO2 dielectrics | 1-gen-2011 | G., Bersuker; J., Yum; Vandelli, Luca; Padovani, Andrea; Larcher, Luca; V., Iglesias; M., Porti; M., Nafría; K., Mckenna; A., Shluger; P., Kirsch; R., Jammy | |
Comprehensive physical modeling of forming and switching operations in HfO2 RRAM devices | 1-gen-2011 | Vandelli, Luca; Padovani, Andrea; Larcher, Luca; G., Broglia; G., Ori; Montorsi, Monia; G., Bersuker; Pavan, Paolo | |
Physical modeling of charge transport and degradation in HfO 2 stacks for logic device and memory applications | 1-gen-2011 | Larcher, Luca; Padovani, Andrea; Vandelli, Luca; G., Bersuker | |
Threshold Shift Observed in Resistive Switching in Metal-Oxide-Semiconductor Transistors and the Effect of Forming Gas Anneal | 1-gen-2011 | W. H., Liu; K. L., Pey; X., Wu; N., Raghavan; Padovani, Andrea; Larcher, Luca; Vandelli, Luca; M., Bosman; T., Kauerauf | |
Charge transport in high-k stacks for charge-trapping memory applications: A modeling perspective (invited) | 1-gen-2011 | Larcher, Luca; Padovani, Andrea; Vandelli, Luca; Pavan, Paolo | |
Experimental and Theoretical Study of Electrode Effects in HfO2 based RRAM | 1-gen-2011 | C., Cagli; J., Buckley; V., Jousseaume; A., Salaun; H., Grampeix; J. F., Nodin; H., Feldis; A., Persico; J., Cluzel; P., Lorenzi; L., Massari; R., Rao; F., Irrera; T., Cabout; F., Aussenac; C., Carabasse; M., Coue; P., Calka; E., Martinez; L., Perniola; P., Blaise; Z., Fang; Y. H., Yu; G., Ghibaudo; D., Deleruyelle; M., Bocquet; C., Muller; Padovani, Andrea; Pirrotta, Onofrio; Vandelli, Luca; Larcher, Luca; G., Reimbold; B., de Salvo | |
Microscopic understanding and modeling of HfO2 RRAM device physics | 1-gen-2012 | Larcher, Luca; Padovani, Andrea; Pirrotta, Onofrio; Vandelli, Luca; G., Bersuker | |
Evidences for vertical charge dipole formation in charge-trapping memories and its impact on reliability | 1-gen-2012 | Padovani, Andrea; A., Arreghini; Vandelli, Luca; Larcher, Luca; G., Van den bosch; J., Van Houdt | |
Modeling the Effects of Different Forming Conditions on RRAM Conductive Filament Stability | 1-gen-2013 | B., Butcher; G., Bersuker; Vandelli, Luca; Padovani, Andrea; Larcher, Luca; A., Kalantarian; R., Geer; D. C., Gilmer |
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