Sfoglia per Autore
Random telegraph noise (RTN) in scaled RRAM devices
2013 D., Veksler; G., Bersuker; Vandelli, Luca; Padovani, Andrea; Larcher, Luca; A., Muraviev; B., Chakrabarti; E., Vogel; D. C., Gilmer; P. D., Kirsch
Connecting the physical and electrical properties of Hafnia-based RRAM
2013 B., Butcher; G., Bersuker; D., Gilmer; P., Kirsch; Larcher, Luca; Padovani, Andrea; Vandelli, Luca; R., Geer; P. D., Kirsch
Modeling the Effects of Different Forming Conditions on RRAM Conductive Filament Stability
2013 B., Butcher; G., Bersuker; Vandelli, Luca; Padovani, Andrea; Larcher, Luca; A., Kalantarian; R., Geer; D. C., Gilmer
Microscopic Modeling of Electrical Stress -Induced Breakdown in Poly-Crystalline Hafnium Oxide Dielectrics
2013 Vandelli, Luca; Padovani, Andrea; Larcher, Luca; G., Bersuker
Defect density evaluation in a high-k MOSFET gate stack combining experimental and modeling methods
2014 Puglisi, Francesco Maria; Veksler, D.; Matthews, K.; Bersuker, G.; Larcher, Luca; Padovani, Andrea; Vandelli, Luca; Pavan, Paolo
A Charge-Trapping Model for the Fast Component of Positive Bias Temperature Instability (PBTI) in High-k Gate-Stacks
2014 Vandelli, Luca; Larcher, Luca; Veksler, Dmitry; Padovani, Andrea; Bersuker, Gennadi; Matthews, Kenneth
Progresses in Modeling HfOx RRAM Operations and Variability
2014 Larcher, Luca; Pirrotta, Onofrio; Puglisi, Francesco Maria; Padovani, Andrea; Pavan, Paolo; Vandelli, Luca
A Compact Model of Program Window in HfOx RRAM Devices for Conductive Filament Characteristics Analysis
2014 Larcher, Luca; Puglisi, Francesco Maria; Pavan, Paolo; Padovani, Andrea; Vandelli, Luca; Bersuker, Gennadi
SrTiOx for sub-20 nm DRAM technology nodes - Characterization and modeling
2015 Kaczer, B.; Larcher, Luca; Vandelli, Luca; Reisinger, H.; Popovici, M.; Clima, S.; Ji, Z.; Joshi, S.; Swerts, J.; Redolfi, A.; Afanas'Ev, V. V.; Jurczak, M.
A microscopic physical description of RTN current fluctuations in HfOx RRAM
2015 Puglisi, Francesco Maria; Pavan, Paolo; Vandelli, Luca; Padovani, Andrea; Bertocchi, Matteo; Larcher, Luca
Substrate and temperature influence on the trap density distribution in high-k III-V MOSFETs
2015 Sereni, G.; Vandelli, L.; Cavicchioli, R.; Larcher, L.; Veksler, D.; Bersuker, G.
Microscopic Modeling of HfOₓ RRAM Operations: From Forming to Switching
2015 Padovani, Andrea; Larcher, Luca; Pirrotta, Onofrio; Vandelli, Luca; Bersuker, Gennadi
A novel technique exploiting C-V, G-V and I-V simulations to investigate defect distribution and native oxide in high-κ dielectrics for III-V MOSFETs
2015 Sereni, Gabriele; Larcher, Luca; Vandelli, Luca; Veksler, D.; Kim, T.; Koh, D.; Bersuker, Gennadi
Cross-correlation of electrical measurements via physics-based device simulations: Linking electrical and structural characteristics
2015 Padovani, A.; Larcher, L.; Vandelli, L.; Bertocchi, M.; Cavicchioli, R.; Veksler, D.; Bersuker, G.
A New Physical Method Based on CV--GV Simulations for the Characterization of the Interfacial and Bulk Defect Density in High-k/III--V MOSFETs
2015 Sereni, Gabriele; Vandelli, Luca; Veksler, Dmitry; Larcher, Luca
Electrical defect spectroscopy and reliability prediction through a novel simulation-based methodology
2016 Larcher, Luca; Sereni, Gabriele; Padovani, Andrea; Vandelli, Luca
Defect spectroscopy and engineering for nanoscale electron device applications: A novel simulation-based methodology
2016 Larcher, Luca; Sereni, Gabriele; Vandelli, Luca
Multiscale modeling of electron-ion interactions for engineering novel electronic device and materials
2016 Larcher, Luca; Puglisi, Francesco Maria; Padovani, Andrea; Vandelli, Luca; Pavan, Paolo
Titolo | Data di pubblicazione | Autore(i) | File |
---|---|---|---|
Random telegraph noise (RTN) in scaled RRAM devices | 1-gen-2013 | D., Veksler; G., Bersuker; Vandelli, Luca; Padovani, Andrea; Larcher, Luca; A., Muraviev; B., Chakrabarti; E., Vogel; D. C., Gilmer; P. D., Kirsch | |
Connecting the physical and electrical properties of Hafnia-based RRAM | 1-gen-2013 | B., Butcher; G., Bersuker; D., Gilmer; P., Kirsch; Larcher, Luca; Padovani, Andrea; Vandelli, Luca; R., Geer; P. D., Kirsch | |
Modeling the Effects of Different Forming Conditions on RRAM Conductive Filament Stability | 1-gen-2013 | B., Butcher; G., Bersuker; Vandelli, Luca; Padovani, Andrea; Larcher, Luca; A., Kalantarian; R., Geer; D. C., Gilmer | |
Microscopic Modeling of Electrical Stress -Induced Breakdown in Poly-Crystalline Hafnium Oxide Dielectrics | 1-gen-2013 | Vandelli, Luca; Padovani, Andrea; Larcher, Luca; G., Bersuker | |
Defect density evaluation in a high-k MOSFET gate stack combining experimental and modeling methods | 1-gen-2014 | Puglisi, Francesco Maria; Veksler, D.; Matthews, K.; Bersuker, G.; Larcher, Luca; Padovani, Andrea; Vandelli, Luca; Pavan, Paolo | |
A Charge-Trapping Model for the Fast Component of Positive Bias Temperature Instability (PBTI) in High-k Gate-Stacks | 1-gen-2014 | Vandelli, Luca; Larcher, Luca; Veksler, Dmitry; Padovani, Andrea; Bersuker, Gennadi; Matthews, Kenneth | |
Progresses in Modeling HfOx RRAM Operations and Variability | 1-gen-2014 | Larcher, Luca; Pirrotta, Onofrio; Puglisi, Francesco Maria; Padovani, Andrea; Pavan, Paolo; Vandelli, Luca | |
A Compact Model of Program Window in HfOx RRAM Devices for Conductive Filament Characteristics Analysis | 1-gen-2014 | Larcher, Luca; Puglisi, Francesco Maria; Pavan, Paolo; Padovani, Andrea; Vandelli, Luca; Bersuker, Gennadi | |
SrTiO<inf>x</inf> for sub-20 nm DRAM technology nodes - Characterization and modeling | 1-gen-2015 | Kaczer, B.; Larcher, Luca; Vandelli, Luca; Reisinger, H.; Popovici, M.; Clima, S.; Ji, Z.; Joshi, S.; Swerts, J.; Redolfi, A.; Afanas'Ev, V. V.; Jurczak, M. | |
A microscopic physical description of RTN current fluctuations in HfOx RRAM | 1-gen-2015 | Puglisi, Francesco Maria; Pavan, Paolo; Vandelli, Luca; Padovani, Andrea; Bertocchi, Matteo; Larcher, Luca | |
Substrate and temperature influence on the trap density distribution in high-k III-V MOSFETs | 1-gen-2015 | Sereni, G.; Vandelli, L.; Cavicchioli, R.; Larcher, L.; Veksler, D.; Bersuker, G. | |
Microscopic Modeling of HfOₓ RRAM Operations: From Forming to Switching | 1-gen-2015 | Padovani, Andrea; Larcher, Luca; Pirrotta, Onofrio; Vandelli, Luca; Bersuker, Gennadi | |
A novel technique exploiting C-V, G-V and I-V simulations to investigate defect distribution and native oxide in high-κ dielectrics for III-V MOSFETs | 1-gen-2015 | Sereni, Gabriele; Larcher, Luca; Vandelli, Luca; Veksler, D.; Kim, T.; Koh, D.; Bersuker, Gennadi | |
Cross-correlation of electrical measurements via physics-based device simulations: Linking electrical and structural characteristics | 1-gen-2015 | Padovani, A.; Larcher, L.; Vandelli, L.; Bertocchi, M.; Cavicchioli, R.; Veksler, D.; Bersuker, G. | |
A New Physical Method Based on CV--GV Simulations for the Characterization of the Interfacial and Bulk Defect Density in High-k/III--V MOSFETs | 1-gen-2015 | Sereni, Gabriele; Vandelli, Luca; Veksler, Dmitry; Larcher, Luca | |
Electrical defect spectroscopy and reliability prediction through a novel simulation-based methodology | 1-gen-2016 | Larcher, Luca; Sereni, Gabriele; Padovani, Andrea; Vandelli, Luca | |
Defect spectroscopy and engineering for nanoscale electron device applications: A novel simulation-based methodology | 1-gen-2016 | Larcher, Luca; Sereni, Gabriele; Vandelli, Luca | |
Multiscale modeling of electron-ion interactions for engineering novel electronic device and materials | 1-gen-2016 | Larcher, Luca; Puglisi, Francesco Maria; Padovani, Andrea; Vandelli, Luca; Pavan, Paolo |
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