SOCI, FABIO
 Distribuzione geografica
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Continente #
NA - Nord America 1.504
EU - Europa 439
AS - Asia 224
OC - Oceania 2
Continente sconosciuto - Info sul continente non disponibili 1
Totale 2.170
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Nazione #
US - Stati Uniti d'America 1.502
GB - Regno Unito 176
CN - Cina 87
SE - Svezia 60
HK - Hong Kong 55
IT - Italia 52
UA - Ucraina 41
DE - Germania 40
FI - Finlandia 33
SG - Singapore 29
TR - Turchia 25
BG - Bulgaria 17
TW - Taiwan 10
FR - Francia 8
JP - Giappone 5
IN - India 4
KR - Corea 4
NL - Olanda 4
RU - Federazione Russa 4
AU - Australia 2
CA - Canada 2
ID - Indonesia 2
IR - Iran 2
LT - Lituania 2
AM - Armenia 1
ES - Italia 1
EU - Europa 1
PT - Portogallo 1
Totale 2.170
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Città #
Fairfield 207
Woodbridge 163
Chandler 152
Southend 149
Ashburn 125
Houston 109
Seattle 92
Dearborn 85
Wilmington 75
Cambridge 70
Jacksonville 70
Ann Arbor 64
Hong Kong 54
Nyköping 47
Beijing 28
Modena 22
Singapore 21
Helsinki 18
Eugene 16
Princeton 16
Sofia 16
San Diego 14
Boardman 13
Shanghai 13
Izmir 11
Redwood City 9
New York 8
Norwalk 6
Nanjing 5
Tulare 5
Paris 4
Taipei 4
Berlin 3
Bristol 3
Guangzhou 3
Indiana 3
Nanchang 3
Roermond 3
Jakarta 2
Kilburn 2
Kish 2
Kunming 2
London 2
Makuharihongo 2
Milan 2
Rende 2
Rome 2
San Jose 2
Segrate 2
Shenzhen 2
Southwark 2
Tainan City 2
Tokyo 2
Turin 2
Acton 1
Aveiro 1
Bangalore 1
Baotou 1
Bologna 1
Bremen 1
Chennai 1
Delhi 1
Dongguan 1
Duncan 1
Gothenburg 1
Guastalla 1
Hanover 1
Hebei 1
Heze 1
Hsinchu 1
Jiaxing 1
Jinan 1
Lanciano 1
Las Rozas de Madrid 1
Leawood 1
Lecce 1
Magdeburg 1
Mehr 1
Messina 1
Mountain View 1
Ningbo 1
Novellara 1
Novokuznetsk 1
Ottawa 1
Padova 1
Parma 1
Port Pirie 1
Reggio Nell'emilia 1
Santa Barbara 1
Seongnam 1
Shenyang 1
Siegen 1
Sydney 1
Toronto 1
Trieste 1
Waltham 1
Washington 1
Xian 1
Yellow Springs 1
Yerevan 1
Totale 1.787
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Nome #
Effects of buffer compensation strategies on the electrical performance and RF reliability of AlGaN/GaN HEMTs 201
Hot-Electron Degradation of AlGaN/GaN High-Electron Mobility Transistors During RF Operation: Correlation With GaN Buffer Design 194
Field plate related reliability improvements in GaN-on-Si HEMTs 178
Experimental and numerical correlation between current-collapse and fe-doping profiles in GaN HEMTs 172
Influence of properties of Si3N4 passivation layer on the electrical characteristics of Normally-off AlGaN/GaN HEMT 169
Traps localization and analysis in GaN HEMTs 165
Impact of field-plate geometry on the reliability of GaN-on-SiC HEMTs 165
Influence of device self-heating on trap activation energy extraction 164
Impact of Hot Electrons on the Reliability of AlGaN/GaN High Electron Mobility Transistors 130
PARASITIC EFFECTS OF BUFFER DESIGN ON STATIC AND DYNAMIC PARAMETERS OF ALGAN/GAN HIGH ELECTRON MOBILITY TRANSISTORS 119
Deep levels characterization in GaN HEMTs - Part II: Experimental and numerical evaluation of self-heating effects on the extraction of traps activation energy 119
Threshold voltage shift investigation and oxide trap profile extraction in AlGaN/GaN MIS-HEMTs 96
Effect of Gate Field-Plate Geometry on On-Resistance in AlGan/GaN HEMTs for Power Applications 91
DC and Pulsed Characterization of GaN-based Single- and Double- Heterostructure Devices 91
Experimental Technique for Traps Spatial Localization in GaN HEMTs 87
Correlation between Drain Current Transient and Double-Pulse Measurements in AlGaN/GaN HEMT Trap Analysis 87
Totale 2.228
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Categoria #
all - tutte 7.599
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 7.599
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2019/2020474 29 15 20 27 41 92 95 48 51 17 32 7
2020/2021407 43 8 29 20 33 41 44 39 14 99 21 16
2021/2022288 13 22 45 6 1 13 23 15 22 19 75 34
2022/2023327 24 40 22 36 26 55 2 37 59 5 13 8
2023/2024216 6 14 16 24 50 7 5 60 5 3 3 23
2024/202527 27 0 0 0 0 0 0 0 0 0 0 0
Totale 2.228