SOCI, FABIO
 Distribuzione geografica
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Continente #
NA - Nord America 1.662
EU - Europa 461
AS - Asia 283
OC - Oceania 2
Continente sconosciuto - Info sul continente non disponibili 1
Totale 2.409
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Nazione #
US - Stati Uniti d'America 1.660
GB - Regno Unito 176
CN - Cina 105
SG - Singapore 67
SE - Svezia 62
IT - Italia 56
HK - Hong Kong 55
DE - Germania 43
UA - Ucraina 41
FI - Finlandia 33
TR - Turchia 25
BG - Bulgaria 17
RU - Federazione Russa 16
TW - Taiwan 10
FR - Francia 8
IN - India 7
JP - Giappone 5
NL - Olanda 5
KR - Corea 4
AU - Australia 2
CA - Canada 2
ID - Indonesia 2
IR - Iran 2
LT - Lituania 2
AM - Armenia 1
ES - Italia 1
EU - Europa 1
PT - Portogallo 1
Totale 2.409
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Città #
Fairfield 207
Woodbridge 163
Chandler 152
Southend 149
Santa Clara 145
Ashburn 128
Houston 109
Seattle 92
Dearborn 85
Wilmington 75
Cambridge 70
Jacksonville 70
Ann Arbor 64
Singapore 56
Hong Kong 54
Nyköping 47
Beijing 28
Modena 22
Helsinki 18
Eugene 16
Princeton 16
Sofia 16
San Diego 14
Boardman 13
Shanghai 13
Izmir 11
Redwood City 9
New York 8
Norwalk 6
Nanjing 5
Tulare 5
Milan 4
Novosibirsk 4
Paris 4
Taipei 4
Bengaluru 3
Berlin 3
Bristol 3
Guangzhou 3
Indiana 3
Munich 3
Nanchang 3
Roermond 3
Jakarta 2
Kilburn 2
Kish 2
Kunming 2
London 2
Makuharihongo 2
Rende 2
Rome 2
San Jose 2
Segrate 2
Shenzhen 2
Southwark 2
St Petersburg 2
Tainan City 2
Tokyo 2
Turin 2
Acton 1
Aveiro 1
Bangalore 1
Baotou 1
Bologna 1
Bremen 1
Catania 1
Chengdu 1
Chennai 1
Delhi 1
Dongguan 1
Duncan 1
Fuzhou 1
Gothenburg 1
Guastalla 1
Hanover 1
Hebei 1
Heze 1
Hsinchu 1
Jiaxing 1
Jinan 1
Lanciano 1
Las Rozas de Madrid 1
Leawood 1
Lecce 1
Magdeburg 1
Mehr 1
Messina 1
Moscow 1
Mountain View 1
Newark 1
Ningbo 1
Novellara 1
Novokuznetsk 1
Ottawa 1
Padova 1
Parma 1
Port Pirie 1
Reggio Nell'emilia 1
Santa Barbara 1
Seongnam 1
Totale 1.979
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Nome #
Effects of buffer compensation strategies on the electrical performance and RF reliability of AlGaN/GaN HEMTs 221
Hot-Electron Degradation of AlGaN/GaN High-Electron Mobility Transistors During RF Operation: Correlation With GaN Buffer Design 210
Field plate related reliability improvements in GaN-on-Si HEMTs 196
Experimental and numerical correlation between current-collapse and fe-doping profiles in GaN HEMTs 187
Traps localization and analysis in GaN HEMTs 182
Influence of properties of Si3N4 passivation layer on the electrical characteristics of Normally-off AlGaN/GaN HEMT 182
Impact of field-plate geometry on the reliability of GaN-on-SiC HEMTs 179
Influence of device self-heating on trap activation energy extraction 177
Impact of Hot Electrons on the Reliability of AlGaN/GaN High Electron Mobility Transistors 142
PARASITIC EFFECTS OF BUFFER DESIGN ON STATIC AND DYNAMIC PARAMETERS OF ALGAN/GAN HIGH ELECTRON MOBILITY TRANSISTORS 135
Deep levels characterization in GaN HEMTs - Part II: Experimental and numerical evaluation of self-heating effects on the extraction of traps activation energy 131
Threshold voltage shift investigation and oxide trap profile extraction in AlGaN/GaN MIS-HEMTs 110
DC and Pulsed Characterization of GaN-based Single- and Double- Heterostructure Devices 106
Correlation between Drain Current Transient and Double-Pulse Measurements in AlGaN/GaN HEMT Trap Analysis 106
Effect of Gate Field-Plate Geometry on On-Resistance in AlGan/GaN HEMTs for Power Applications 102
Experimental Technique for Traps Spatial Localization in GaN HEMTs 101
Totale 2.467
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Categoria #
all - tutte 8.607
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 8.607
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2019/2020342 0 0 0 0 0 92 95 48 51 17 32 7
2020/2021407 43 8 29 20 33 41 44 39 14 99 21 16
2021/2022288 13 22 45 6 1 13 23 15 22 19 75 34
2022/2023327 24 40 22 36 26 55 2 37 59 5 13 8
2023/2024216 6 14 16 24 50 7 5 60 5 3 3 23
2024/2025266 29 13 18 49 137 20 0 0 0 0 0 0
Totale 2.467