SOCI, FABIO
 Distribuzione geografica
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Continente #
NA - Nord America 2.120
AS - Asia 951
EU - Europa 686
SA - Sud America 132
Continente sconosciuto - Info sul continente non disponibili 60
AF - Africa 14
OC - Oceania 2
Totale 3.965
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Nazione #
US - Stati Uniti d'America 2.096
SG - Singapore 291
CN - Cina 248
GB - Regno Unito 216
VN - Vietnam 132
HK - Hong Kong 125
BR - Brasile 107
SE - Svezia 87
IT - Italia 81
RU - Federazione Russa 76
DE - Germania 52
UA - Ucraina 44
FI - Finlandia 40
FR - Francia 40
IN - India 35
TR - Turchia 28
BG - Bulgaria 17
KR - Corea 15
TW - Taiwan 12
IQ - Iraq 10
JP - Giappone 10
AR - Argentina 9
CA - Canada 9
NL - Olanda 9
BD - Bangladesh 6
ID - Indonesia 6
MX - Messico 6
ZA - Sudafrica 6
EC - Ecuador 5
AE - Emirati Arabi Uniti 4
CO - Colombia 4
PA - Panama 4
PK - Pakistan 4
PL - Polonia 4
VE - Venezuela 4
UZ - Uzbekistan 3
AT - Austria 2
AU - Australia 2
CH - Svizzera 2
CL - Cile 2
DK - Danimarca 2
DZ - Algeria 2
ES - Italia 2
IR - Iran 2
KZ - Kazakistan 2
LT - Lituania 2
PT - Portogallo 2
SK - Slovacchia (Repubblica Slovacca) 2
AM - Armenia 1
AZ - Azerbaigian 1
BH - Bahrain 1
BY - Bielorussia 1
CR - Costa Rica 1
CZ - Repubblica Ceca 1
DO - Repubblica Dominicana 1
EG - Egitto 1
EU - Europa 1
GA - Gabon 1
GE - Georgia 1
GR - Grecia 1
HN - Honduras 1
HR - Croazia 1
HU - Ungheria 1
IL - Israele 1
JM - Giamaica 1
JO - Giordania 1
KG - Kirghizistan 1
KH - Cambogia 1
KN - Saint Kitts e Nevis 1
LA - Repubblica Popolare Democratica del Laos 1
LK - Sri Lanka 1
MA - Marocco 1
MU - Mauritius 1
MY - Malesia 1
NG - Nigeria 1
NP - Nepal 1
OM - Oman 1
PE - Perù 1
QA - Qatar 1
RS - Serbia 1
SA - Arabia Saudita 1
SN - Senegal 1
SY - Repubblica araba siriana 1
TH - Thailandia 1
TM - Turkmenistan 1
Totale 3.906
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Città #
Fairfield 207
Santa Clara 203
Ashburn 198
Singapore 171
Woodbridge 163
Chandler 152
Southend 149
Hong Kong 122
Houston 111
Seattle 94
San Jose 90
Dearborn 85
Wilmington 76
Jacksonville 71
Cambridge 70
Ann Arbor 64
Beijing 59
Nyköping 47
London 37
Ho Chi Minh City 34
Hanoi 30
Helsinki 25
Modena 24
Hefei 23
Los Angeles 21
Council Bluffs 20
The Dalles 20
Milan 18
Princeton 17
Shanghai 17
Eugene 16
Kent 16
Sofia 16
New York 15
Bengaluru 14
San Diego 14
Boardman 13
Buffalo 11
Izmir 11
Lauterbourg 11
Seoul 11
Da Nang 9
Redwood City 9
Moscow 8
Novosibirsk 8
Brooklyn 7
Haiphong 7
Belo Horizonte 6
Dallas 6
Frankfurt am Main 6
Norwalk 6
Tokyo 6
Munich 5
Nanjing 5
Paris 5
Salt Lake City 5
São Paulo 5
Tulare 5
Wallingford 5
Baghdad 4
Brasília 4
Changsha 4
Chennai 4
Chicago 4
Denver 4
Hải Dương 4
Jakarta 4
Orem 4
Rio de Janeiro 4
Rome 4
Taipei 4
Berlin 3
Biên Hòa 3
Bristol 3
Guangzhou 3
Indiana 3
Johannesburg 3
Nanchang 3
Panama City 3
Porto Alegre 3
Roermond 3
Roubaix 3
St Petersburg 3
Stockholm 3
Tampa 3
Araruama 2
Bologna 2
Boston 2
Can Tho 2
Caracas 2
Chengdu 2
Dalian 2
Delhi 2
Fortaleza 2
Fuzhou 2
Guarulhos 2
Hai Bà Trưng 2
Hsinchu 2
Karachi 2
Kilburn 2
Totale 2.799
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Nome #
Effects of buffer compensation strategies on the electrical performance and RF reliability of AlGaN/GaN HEMTs 323
Hot-Electron Degradation of AlGaN/GaN High-Electron Mobility Transistors During RF Operation: Correlation With GaN Buffer Design 296
Influence of properties of Si3N4 passivation layer on the electrical characteristics of Normally-off AlGaN/GaN HEMT 288
Traps localization and analysis in GaN HEMTs 284
Experimental and numerical correlation between current-collapse and fe-doping profiles in GaN HEMTs 283
Field plate related reliability improvements in GaN-on-Si HEMTs 282
Impact of field-plate geometry on the reliability of GaN-on-SiC HEMTs 273
Influence of device self-heating on trap activation energy extraction 269
Deep levels characterization in GaN HEMTs - Part II: Experimental and numerical evaluation of self-heating effects on the extraction of traps activation energy 246
PARASITIC EFFECTS OF BUFFER DESIGN ON STATIC AND DYNAMIC PARAMETERS OF ALGAN/GAN HIGH ELECTRON MOBILITY TRANSISTORS 237
Impact of Hot Electrons on the Reliability of AlGaN/GaN High Electron Mobility Transistors 225
Correlation between Drain Current Transient and Double-Pulse Measurements in AlGaN/GaN HEMT Trap Analysis 212
DC and Pulsed Characterization of GaN-based Single- and Double- Heterostructure Devices 197
Threshold voltage shift investigation and oxide trap profile extraction in AlGaN/GaN MIS-HEMTs 191
Effect of Gate Field-Plate Geometry on On-Resistance in AlGan/GaN HEMTs for Power Applications 181
Experimental Technique for Traps Spatial Localization in GaN HEMTs 178
Totale 3.965
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Categoria #
all - tutte 14.105
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 14.105
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2021/2022275 0 22 45 6 1 13 23 15 22 19 75 34
2022/2023327 24 40 22 36 26 55 2 37 59 5 13 8
2023/2024216 6 14 16 24 50 7 5 60 5 3 3 23
2024/2025674 29 13 18 49 137 88 36 70 71 11 63 89
2025/20261.040 48 43 82 56 211 63 167 57 128 97 40 48
2026/202750 37 13 0 0 0 0 0 0 0 0 0 0
Totale 3.965