On-resistance (RDSon) degradation is a well-known issue in AlGaN/GaN HEMTs technology for power applications [1,2], and is usually observed when the device is rapidly switched from off- to on-state condition. The introduction of field-plate terminals has proven to be a viable solution in order to mitigate the off-state electric fields and consequently improve the dynamic on-resistance behavior [2]. In this work the effect of different field-plate geometry will be investigated. Moreover, by using different characterization techniques, some insights on the trapping mechanisms causing the RDSon degradation will also be presented.
Effect of Gate Field-Plate Geometry on On-Resistance in AlGan/GaN HEMTs for Power Applications / Soci, Fabio; Pozzovivo, G.; Silvestri, M.; Curatola, G.; Detzel, T.; Haeberlen, O.; Chini, Alessandro. - (2014). (Intervento presentato al convegno 23rd European Workshop on Heterostructure Technology - HETECH 2014 tenutosi a Justus Liebig University, Giessen, Germany nel 12-15 October 2014).
Effect of Gate Field-Plate Geometry on On-Resistance in AlGan/GaN HEMTs for Power Applications
SOCI, FABIO;CHINI, Alessandro
2014
Abstract
On-resistance (RDSon) degradation is a well-known issue in AlGaN/GaN HEMTs technology for power applications [1,2], and is usually observed when the device is rapidly switched from off- to on-state condition. The introduction of field-plate terminals has proven to be a viable solution in order to mitigate the off-state electric fields and consequently improve the dynamic on-resistance behavior [2]. In this work the effect of different field-plate geometry will be investigated. Moreover, by using different characterization techniques, some insights on the trapping mechanisms causing the RDSon degradation will also be presented.
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