Correlation between Drain Current Transient and Double-Pulse Measurements in AlGaN/GaN HEMT Trap Analysis

Trap characterization represents an important step towards the improvement of the performances and reliability of GaN-based HEMT devices. Double-pulsed measurements and long drain current transient analysis are effective methods to gather complementary information on traps identification and localization: activation energy and time constant of the traps may be extrapolated through drain current transients measurements [1-3]; on the other hand, the analysis of the dynamic VTH shift and gm peak reduction, based on double-pulsed measurements, allows to understand whether the trap states are located below the gate (VTH shift) or in drain-gate access region (gm peak reduction) [4]. The aim of this work is to experimentally investigate the correlation between these two characterization techniques by applying them to a series of identical devices and comparing results on individual samples.