An experimental technique based on pulsed I-V measurement for the trap spatial localization within GaN-HEMTs is presented and discussed. By evaluating the dependence of the drain current-collapse versus the gate voltage base-line used for pulsed I-V measurement it is possible to spatially localize trap level responsible for the device performance degradation.
Experimental Technique for Traps Spatial Localization in GaN HEMTs / Chini, Alessandro; Soci, Fabio; Meneghesso, G.; Zanoni, E.. - (2013). (Intervento presentato al convegno 22nd European Workshop on Heterostructure Technology - HETECH 2013 tenutosi a University of Glasgow, Glasgow (UK) nel 9-11 September 2013).
Experimental Technique for Traps Spatial Localization in GaN HEMTs
CHINI, Alessandro;SOCI, FABIO;
2013
Abstract
An experimental technique based on pulsed I-V measurement for the trap spatial localization within GaN-HEMTs is presented and discussed. By evaluating the dependence of the drain current-collapse versus the gate voltage base-line used for pulsed I-V measurement it is possible to spatially localize trap level responsible for the device performance degradation.
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