ESPOSTO, Michele
 Distribuzione geografica
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Continente #
NA - Nord America 2.103
EU - Europa 667
AS - Asia 287
SA - Sud America 4
OC - Oceania 2
Totale 3.063
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Nazione #
US - Stati Uniti d'America 2.102
GB - Regno Unito 259
SE - Svezia 133
CN - Cina 102
SG - Singapore 73
DE - Germania 63
HK - Hong Kong 54
UA - Ucraina 54
TR - Turchia 47
FI - Finlandia 39
RU - Federazione Russa 33
IT - Italia 26
BG - Bulgaria 20
FR - Francia 18
BE - Belgio 10
IN - India 8
IE - Irlanda 6
AU - Australia 2
BR - Brasile 2
GR - Grecia 2
NL - Olanda 2
TW - Taiwan 2
BO - Bolivia 1
DK - Danimarca 1
NO - Norvegia 1
PA - Panama 1
PE - Perù 1
VN - Vietnam 1
Totale 3.063
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Città #
Fairfield 251
Santa Clara 245
Chandler 201
Southend 198
Woodbridge 166
Ashburn 158
Houston 156
Ann Arbor 122
Jacksonville 118
Seattle 102
Nyköping 95
Dearborn 89
Wilmington 87
Cambridge 75
Singapore 56
Hong Kong 54
Beijing 27
San Diego 21
Eugene 20
Izmir 20
Princeton 20
Sofia 20
Helsinki 19
Des Moines 12
Brussels 10
New York 9
Moscow 8
Bremen 7
Dublin 6
Hefei 6
London 6
Chicago 5
Grafing 5
Saint Petersburg 5
Los Angeles 4
Redwood City 4
Bengaluru 3
Boardman 3
Dongguan 3
Guangzhou 3
Milan 3
Modena 3
Norwalk 3
San Mateo 3
Auburn Hills 2
Bangalore 2
Bordeaux 2
Hounslow 2
Indiana 2
Jinan 2
Nanjing 2
Parma 2
Rome 2
Savona 2
Shenyang 2
Simi Valley 2
Taipei 2
Trento 2
Xian 2
Americana 1
Amsterdam 1
Athens 1
Atlanta 1
Büdelsdorf 1
Chengdu 1
Copenhagen 1
Hangzhou 1
Hanoi 1
Hebei 1
Heraklion 1
Hyderabad 1
Istanbul 1
Jiaxing 1
Kemerovo 1
Kilburn 1
La Paz 1
La Verriere 1
Lima 1
Magdeburg 1
Mont-saint-aignan 1
Nanchang 1
Oslo 1
Padova 1
Palo Alto 1
Paris 1
Perth 1
Pessac-sur-Dordogne 1
San Francisco 1
Shanghai 1
Tianjin 1
Turin 1
Verona 1
Wuhan 1
Yiwu 1
Zola Predosa 1
Totale 2.497
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Nome #
Characterization and Numerical Simulations of High Power Field-Plated pHEMTs 211
Analytical Model for Power Switching GaN-Based HEMT Design 200
Study of GaN HEMTs electrical degradation by means of numerical simulations 195
Evaluation of GaN HEMT degradation by means of pulsed I-V, leakage and DLTS measurements 193
Experimental and simulated dc degradation of GaN HEMTs by means of gate-drain and gate-source reverse bias stress 190
Correlation between DC and rf degradation due to deep levels in AlGaN/GaN HEMTs 189
Evaluation and Numerical Simulations of GaN HEMTs Electrical Degradation 188
An Investigation of the Electrical Degradation of GaN High-Electron-Mobility Transistors by Numerical Simulations of DC Characteristics and Scattering Parameters 187
Comparison of Cu-gate and Ni/Au-gate GaN HEMTs large signal characteristics 182
The influence of interface states at the Schottky junction on the large signal behavior of copper-gate GaN HEMTs 169
Influence of interface states at Schottky junction on the large signal behaviour of Cu-gate standard AlGaN/GaN HEMTs 148
Influence of Device Self-Heating on the Activation Energy Extraction During Current-DLTS Measurement 137
Design of field-plated InP-based HEMTs 134
Trapping phenomena in field-plated high power GaAs pHEMTs 126
Influence of RF drive and switching frequency on degradation mechanisms in GaN HEMTs 121
RF degradation of GaN HEMTs and its correlation with DC stress and I-DLTS measurements 111
Design of GaN HEMTs for Power Switching Operation 109
GaN Hemt Degradation induced by Reverse Gate Bias Stress 105
Study of GaN HEMTs degradation by numerical simulations of scattering parameters 100
Reverse gate bias stress induced degradation of GaN HEMT 96
Totale 3.091
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Categoria #
all - tutte 10.755
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 10.755
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2019/2020317 0 0 0 0 0 0 110 62 62 21 31 31
2020/2021464 39 27 25 42 66 35 46 55 15 76 17 21
2021/2022364 10 80 24 16 1 15 22 6 32 30 86 42
2022/2023444 46 66 39 52 42 79 4 53 38 4 10 11
2023/2024201 7 10 20 26 57 10 13 36 8 1 2 11
2024/2025398 31 7 6 71 172 111 0 0 0 0 0 0
Totale 3.091