ESPOSTO, Michele
 Distribuzione geografica
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Continente #
NA - Nord America 2.645
AS - Asia 1.284
EU - Europa 903
SA - Sud America 169
Continente sconosciuto - Info sul continente non disponibili 28
AF - Africa 23
OC - Oceania 2
Totale 5.054
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Nazione #
US - Stati Uniti d'America 2.616
SG - Singapore 433
CN - Cina 330
GB - Regno Unito 314
VN - Vietnam 165
HK - Hong Kong 154
SE - Svezia 146
BR - Brasile 124
RU - Federazione Russa 80
DE - Germania 77
FR - Francia 58
IT - Italia 56
UA - Ucraina 55
TR - Turchia 51
FI - Finlandia 43
KR - Corea 37
IN - India 35
BG - Bulgaria 23
IQ - Iraq 16
BD - Bangladesh 14
BE - Belgio 14
AR - Argentina 11
MX - Messico 11
PL - Polonia 10
CO - Colombia 9
ZA - Sudafrica 9
CA - Canada 8
EC - Ecuador 8
UZ - Uzbekistan 7
IE - Irlanda 6
AE - Emirati Arabi Uniti 5
NL - Olanda 5
PH - Filippine 5
PK - Pakistan 5
JP - Giappone 4
UY - Uruguay 4
CL - Cile 3
EG - Egitto 3
JM - Giamaica 3
JO - Giordania 3
MA - Marocco 3
SA - Arabia Saudita 3
TN - Tunisia 3
TW - Taiwan 3
VE - Venezuela 3
AL - Albania 2
AU - Australia 2
BO - Bolivia 2
DK - Danimarca 2
GR - Grecia 2
ID - Indonesia 2
KE - Kenya 2
LT - Lituania 2
LV - Lettonia 2
PE - Perù 2
PY - Paraguay 2
AM - Armenia 1
AT - Austria 1
AZ - Azerbaigian 1
BB - Barbados 1
BH - Bahrain 1
BS - Bahamas 1
CI - Costa d'Avorio 1
CR - Costa Rica 1
DZ - Algeria 1
EE - Estonia 1
ES - Italia 1
GE - Georgia 1
GT - Guatemala 1
IR - Iran 1
KG - Kirghizistan 1
KH - Cambogia 1
KW - Kuwait 1
LB - Libano 1
LK - Sri Lanka 1
MY - Malesia 1
NO - Norvegia 1
PA - Panama 1
PT - Portogallo 1
QA - Qatar 1
RO - Romania 1
SO - Somalia 1
SR - Suriname 1
SV - El Salvador 1
TT - Trinidad e Tobago 1
Totale 5.026
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Città #
Singapore 258
Santa Clara 253
Fairfield 251
Ashburn 250
Chandler 201
Southend 198
Woodbridge 166
Houston 157
Hong Kong 152
Ann Arbor 122
Hefei 119
Jacksonville 118
Seattle 102
Nyköping 95
Dearborn 89
Wilmington 87
San Jose 81
Cambridge 75
Beijing 60
Ho Chi Minh City 52
London 49
Hanoi 42
Seoul 36
Los Angeles 31
Council Bluffs 29
Helsinki 23
Sofia 22
New York 21
San Diego 21
Chicago 20
Eugene 20
Izmir 20
Kent 20
Princeton 20
Lauterbourg 18
The Dalles 18
São Paulo 15
Moscow 13
Brussels 12
Des Moines 12
Buffalo 11
Da Nang 11
Dallas 11
Lyon 9
Milan 8
Orem 8
San Francisco 8
Bremen 7
Haiphong 7
Salt Lake City 7
Shanghai 7
Bogotá 6
Dublin 6
Johannesburg 6
Miano 6
Munich 6
Tashkent 6
Warsaw 6
Atlanta 5
Baghdad 5
Bengaluru 5
Frankfurt am Main 5
Grafing 5
Quito 5
Saint Petersburg 5
Boisar 4
Brasília 4
Brooklyn 4
Columbus 4
Guangzhou 4
Modena 4
Redwood City 4
Rio de Janeiro 4
Rome 4
Wallingford 4
Amman 3
Bexley 3
Boardman 3
Bordeaux 3
Boston 3
Dongguan 3
Erbil 3
Fortaleza 3
Fuzhou 3
Ha Long 3
Kingston 3
Manchester 3
Mexico City 3
Montreal 3
Mumbai 3
Nanded 3
Norwalk 3
Phoenix 3
San Mateo 3
Taipei 3
Thái Bình 3
Thái Nguyên 3
Tokyo 3
Turin 3
Wroclaw 3
Totale 3.634
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Nome #
Analytical Model for Power Switching GaN-Based HEMT Design 337
Characterization and Numerical Simulations of High Power Field-Plated pHEMTs 323
Evaluation of GaN HEMT degradation by means of pulsed I-V, leakage and DLTS measurements 311
The influence of interface states at the Schottky junction on the large signal behavior of copper-gate GaN HEMTs 297
Evaluation and Numerical Simulations of GaN HEMTs Electrical Degradation 295
Experimental and simulated dc degradation of GaN HEMTs by means of gate-drain and gate-source reverse bias stress 295
Comparison of Cu-gate and Ni/Au-gate GaN HEMTs large signal characteristics 288
An Investigation of the Electrical Degradation of GaN High-Electron-Mobility Transistors by Numerical Simulations of DC Characteristics and Scattering Parameters 281
Study of GaN HEMTs electrical degradation by means of numerical simulations 277
Correlation between DC and rf degradation due to deep levels in AlGaN/GaN HEMTs 273
Influence of interface states at Schottky junction on the large signal behaviour of Cu-gate standard AlGaN/GaN HEMTs 244
Design of field-plated InP-based HEMTs 233
Influence of Device Self-Heating on the Activation Energy Extraction During Current-DLTS Measurement 233
Trapping phenomena in field-plated high power GaAs pHEMTs 221
Influence of RF drive and switching frequency on degradation mechanisms in GaN HEMTs 219
RF degradation of GaN HEMTs and its correlation with DC stress and I-DLTS measurements 196
Design of GaN HEMTs for Power Switching Operation 193
GaN Hemt Degradation induced by Reverse Gate Bias Stress 186
Study of GaN HEMTs degradation by numerical simulations of scattering parameters 183
Reverse gate bias stress induced degradation of GaN HEMT 169
Totale 5.054
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Categoria #
all - tutte 17.534
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 17.534
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2021/2022354 0 80 24 16 1 15 22 6 32 30 86 42
2022/2023444 46 66 39 52 42 79 4 53 38 4 10 11
2023/2024201 7 10 20 26 57 10 13 36 8 1 2 11
2024/2025940 31 7 6 71 172 111 55 85 124 16 103 159
2025/20261.376 69 95 138 120 214 111 184 74 137 128 69 37
2026/202745 34 11 0 0 0 0 0 0 0 0 0 0
Totale 5.054