ESPOSTO, Michele
 Distribuzione geografica
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Continente #
NA - Nord America 2.393
AS - Asia 931
EU - Europa 839
SA - Sud America 142
AF - Africa 14
OC - Oceania 2
Totale 4.321
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Nazione #
US - Stati Uniti d'America 2.378
CN - Cina 315
GB - Regno Unito 313
SG - Singapore 294
SE - Svezia 146
HK - Hong Kong 144
BR - Brasile 112
RU - Federazione Russa 79
DE - Germania 76
UA - Ucraina 55
VN - Vietnam 51
TR - Turchia 49
FI - Finlandia 39
FR - Francia 36
IT - Italia 30
IN - India 24
KR - Corea 23
BG - Bulgaria 21
BE - Belgio 10
PL - Polonia 10
AR - Argentina 9
BD - Bangladesh 7
EC - Ecuador 7
CA - Canada 6
IE - Irlanda 6
ZA - Sudafrica 6
MX - Messico 5
CO - Colombia 4
IQ - Iraq 4
NL - Olanda 4
UZ - Uzbekistan 4
AE - Emirati Arabi Uniti 3
JP - Giappone 3
MA - Marocco 3
AL - Albania 2
AU - Australia 2
BO - Bolivia 2
DK - Danimarca 2
GR - Grecia 2
ID - Indonesia 2
JM - Giamaica 2
KE - Kenya 2
LT - Lituania 2
LV - Lettonia 2
PE - Perù 2
PK - Pakistan 2
PY - Paraguay 2
TW - Taiwan 2
VE - Venezuela 2
EE - Estonia 1
EG - Egitto 1
ES - Italia 1
IR - Iran 1
JO - Giordania 1
KG - Kirghizistan 1
NO - Norvegia 1
PA - Panama 1
PH - Filippine 1
RO - Romania 1
SO - Somalia 1
SR - Suriname 1
SV - El Salvador 1
TN - Tunisia 1
UY - Uruguay 1
Totale 4.321
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Città #
Fairfield 251
Santa Clara 246
Chandler 201
Southend 198
Ashburn 187
Woodbridge 166
Singapore 162
Houston 157
Hong Kong 144
Ann Arbor 122
Hefei 119
Jacksonville 118
Seattle 102
Nyköping 95
Dearborn 89
Wilmington 87
Cambridge 75
Beijing 53
London 49
Los Angeles 30
Seoul 22
San Diego 21
Sofia 21
Council Bluffs 20
Eugene 20
Izmir 20
Kent 20
Princeton 20
Helsinki 19
New York 19
Ho Chi Minh City 16
Chicago 15
São Paulo 14
Moscow 13
Des Moines 12
Buffalo 11
Hanoi 11
Brussels 10
Lyon 9
Bremen 7
Salt Lake City 7
Shanghai 7
Dublin 6
Munich 6
Warsaw 6
Bengaluru 5
Frankfurt am Main 5
Grafing 5
Haiphong 5
Milan 5
Saint Petersburg 5
San Francisco 5
Boisar 4
Guangzhou 4
Johannesburg 4
Quito 4
Redwood City 4
Rio de Janeiro 4
Tashkent 4
Atlanta 3
Bexley 3
Boardman 3
Brasília 3
Brooklyn 3
Columbus 3
Da Nang 3
Dallas 3
Dongguan 3
Fuzhou 3
Manchester 3
Modena 3
Montreal 3
Nanded 3
Norwalk 3
Orem 3
San Mateo 3
Tokyo 3
Wroclaw 3
Americana 2
Amsterdam 2
Auburn Hills 2
Bangalore 2
Birmingham 2
Bogotá 2
Bordeaux 2
Boston 2
Buenos Aires 2
Calgary 2
Casablanca 2
Catalão 2
Changsha 2
Curitiba 2
Dhaka 2
Guiyang 2
Handan 2
Hounslow 2
Hải Dương 2
Ibirité 2
Indaiatuba 2
Indiana 2
Totale 3.167
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Nome #
Characterization and Numerical Simulations of High Power Field-Plated pHEMTs 296
Analytical Model for Power Switching GaN-Based HEMT Design 290
Evaluation of GaN HEMT degradation by means of pulsed I-V, leakage and DLTS measurements 266
Comparison of Cu-gate and Ni/Au-gate GaN HEMTs large signal characteristics 259
Evaluation and Numerical Simulations of GaN HEMTs Electrical Degradation 253
The influence of interface states at the Schottky junction on the large signal behavior of copper-gate GaN HEMTs 253
An Investigation of the Electrical Degradation of GaN High-Electron-Mobility Transistors by Numerical Simulations of DC Characteristics and Scattering Parameters 251
Study of GaN HEMTs electrical degradation by means of numerical simulations 249
Experimental and simulated dc degradation of GaN HEMTs by means of gate-drain and gate-source reverse bias stress 242
Correlation between DC and rf degradation due to deep levels in AlGaN/GaN HEMTs 240
Influence of Device Self-Heating on the Activation Energy Extraction During Current-DLTS Measurement 210
Influence of interface states at Schottky junction on the large signal behaviour of Cu-gate standard AlGaN/GaN HEMTs 204
Design of field-plated InP-based HEMTs 201
Trapping phenomena in field-plated high power GaAs pHEMTs 194
Influence of RF drive and switching frequency on degradation mechanisms in GaN HEMTs 180
RF degradation of GaN HEMTs and its correlation with DC stress and I-DLTS measurements 161
Design of GaN HEMTs for Power Switching Operation 157
GaN Hemt Degradation induced by Reverse Gate Bias Stress 153
Study of GaN HEMTs degradation by numerical simulations of scattering parameters 151
Reverse gate bias stress induced degradation of GaN HEMT 139
Totale 4.349
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Categoria #
all - tutte 14.967
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 14.967
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/2021265 0 0 0 0 0 35 46 55 15 76 17 21
2021/2022364 10 80 24 16 1 15 22 6 32 30 86 42
2022/2023444 46 66 39 52 42 79 4 53 38 4 10 11
2023/2024201 7 10 20 26 57 10 13 36 8 1 2 11
2024/2025940 31 7 6 71 172 111 55 85 124 16 103 159
2025/2026716 69 95 138 120 214 80 0 0 0 0 0 0
Totale 4.349