ESPOSTO, Michele
 Distribuzione geografica
Continente #
NA - Nord America 1.830
EU - Europa 643
AS - Asia 216
SA - Sud America 3
OC - Oceania 2
Totale 2.694
Nazione #
US - Stati Uniti d'America 1.830
GB - Regno Unito 259
SE - Svezia 133
CN - Cina 82
DE - Germania 63
HK - Hong Kong 54
UA - Ucraina 54
TR - Turchia 47
FI - Finlandia 39
SG - Singapore 26
IT - Italia 25
BG - Bulgaria 20
FR - Francia 17
RU - Federazione Russa 14
BE - Belgio 10
IN - India 6
IE - Irlanda 5
AU - Australia 2
BR - Brasile 2
DK - Danimarca 1
GR - Grecia 1
NL - Olanda 1
NO - Norvegia 1
PE - Perù 1
VN - Vietnam 1
Totale 2.694
Città #
Fairfield 251
Chandler 201
Southend 198
Woodbridge 166
Houston 156
Ashburn 152
Ann Arbor 122
Jacksonville 118
Seattle 102
Nyköping 95
Dearborn 89
Wilmington 87
Cambridge 75
Hong Kong 54
Beijing 27
San Diego 21
Eugene 20
Izmir 20
Princeton 20
Sofia 20
Helsinki 19
Singapore 14
Des Moines 12
Brussels 10
New York 9
Bremen 7
Hefei 6
London 6
Chicago 5
Dublin 5
Grafing 5
Saint Petersburg 5
Redwood City 4
Boardman 3
Dongguan 3
Guangzhou 3
Los Angeles 3
Milan 3
Modena 3
Norwalk 3
San Mateo 3
Auburn Hills 2
Bangalore 2
Bordeaux 2
Hounslow 2
Indiana 2
Jinan 2
Nanjing 2
Parma 2
Rome 2
Savona 2
Shenyang 2
Simi Valley 2
Trento 2
Xian 2
Americana 1
Amsterdam 1
Atlanta 1
Bengaluru 1
Büdelsdorf 1
Chengdu 1
Copenhagen 1
Hangzhou 1
Hanoi 1
Hebei 1
Heraklion 1
Hyderabad 1
Istanbul 1
Jiaxing 1
Kemerovo 1
Kilburn 1
La Verriere 1
Lima 1
Magdeburg 1
Mont-saint-aignan 1
Nanchang 1
Oslo 1
Padova 1
Palo Alto 1
Perth 1
Pessac-sur-Dordogne 1
San Francisco 1
Shanghai 1
Tianjin 1
Turin 1
Verona 1
Wuhan 1
Yiwu 1
Zola Predosa 1
Totale 2.187
Nome #
Characterization and Numerical Simulations of High Power Field-Plated pHEMTs 195
Analytical Model for Power Switching GaN-Based HEMT Design 181
Study of GaN HEMTs electrical degradation by means of numerical simulations 176
Evaluation of GaN HEMT degradation by means of pulsed I-V, leakage and DLTS measurements 175
Experimental and simulated dc degradation of GaN HEMTs by means of gate-drain and gate-source reverse bias stress 173
Evaluation and Numerical Simulations of GaN HEMTs Electrical Degradation 170
Correlation between DC and rf degradation due to deep levels in AlGaN/GaN HEMTs 170
An Investigation of the Electrical Degradation of GaN High-Electron-Mobility Transistors by Numerical Simulations of DC Characteristics and Scattering Parameters 169
Comparison of Cu-gate and Ni/Au-gate GaN HEMTs large signal characteristics 163
The influence of interface states at the Schottky junction on the large signal behavior of copper-gate GaN HEMTs 151
Influence of interface states at Schottky junction on the large signal behaviour of Cu-gate standard AlGaN/GaN HEMTs 129
Influence of Device Self-Heating on the Activation Energy Extraction During Current-DLTS Measurement 120
Design of field-plated InP-based HEMTs 115
Trapping phenomena in field-plated high power GaAs pHEMTs 106
Influence of RF drive and switching frequency on degradation mechanisms in GaN HEMTs 102
RF degradation of GaN HEMTs and its correlation with DC stress and I-DLTS measurements 92
Design of GaN HEMTs for Power Switching Operation 90
GaN Hemt Degradation induced by Reverse Gate Bias Stress 86
Study of GaN HEMTs degradation by numerical simulations of scattering parameters 80
Reverse gate bias stress induced degradation of GaN HEMT 79
Totale 2.722
Categoria #
all - tutte 9.008
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 9.008


Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2019/2020618 36 30 25 52 64 94 110 62 62 21 31 31
2020/2021464 39 27 25 42 66 35 46 55 15 76 17 21
2021/2022364 10 80 24 16 1 15 22 6 32 30 86 42
2022/2023444 46 66 39 52 42 79 4 53 38 4 10 11
2023/2024201 7 10 20 26 57 10 13 36 8 1 2 11
2024/202529 29 0 0 0 0 0 0 0 0 0 0 0
Totale 2.722