CHINI, Alessandro

CHINI, Alessandro  

Dipartimento di Ingegneria "Enzo Ferrari"  

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Risultati 1 - 20 di 222 (tempo di esecuzione: 0.01 secondi).
Titolo Data di pubblicazione Autore(i) File
12 W/mm power density AlGaN/GaN HEMTs on sapphire substrate 1-gen-2004 Chini, Alessandro; Buttari, D.; Coffie, R.; Heikman, S.; Keller, S.; Mishra, U. K.
2.1 A/mm current density AlGaN/GaN HEMT 1-gen-2003 Chini, Alessandro; Coffie, R.; Meneghesso, G.; Zanoni, E.; Buttari, D.; Heikman, S.; Keller, S.; Mishra, U. K.
A C-Band High-Dynamic Range GaN HEMT Low-Noise Amplifier 1-gen-2004 Xu, H.; Sanabria, C.; Chini, Alessandro; Keller, S.; Mishra, U. K.; York, R. A.
A comprehensive reliability evaluation of high-performance AlGaN/GaN HEMTs for space applications 1-gen-2016 De Santi, Carlo; Dalcanale, Stefano; Stocco, Antonio; Rampazzo, Fabiana; Gerardin, Simone; Meneghini, Matteo; Meneghesso, Gaudenzio; Chini, Alessandro; Verzellesi, Giovanni; Grünenpütt, Jan; Lambert, Benoit; Schauwecker, Bernd; Blanck, Hervé; Zanoni, Andrew Barnes and E.
A new field-plated GaN HEMT structure with improved power and noise performance 1-gen-2004 Xu, Hongtao; Sanabria, Christopher; Chini, Alessandro; Wei, Yun; Heikman, Sten; Keller, Stacia; Mishra, Umesh K.; York, Robert A.
A novel degradation mechanism of AlGaN/GaN/Silicon heterostructures related to the generation of interface traps 1-gen-2012 Meneghini, M.; Bertin, M.; Dal Santo, G.; Stocco, A.; Chini, Alessandro; Marcon, D.; Malinowski, P. E.; Mura, G.; Musu, E.; Vanzi, M.; Meneghesso, G.; Zanoni, E.
A novel GaN HEMT degradation mechanism observed during HTST test 1-gen-2018 Iucolano, F.; Parisi, A.; Reina, S.; Chini, A.
A Novel Temperature Estimation Technique Exploiting Carrier Emission from Buffer Traps 1-gen-2022 Cioni, Marcello; Zagni, Nicolo; Chini, Alessandro
A novel test methodology for RONand VTHmonitoring in GaN HEMTs during switch-mode operation 1-gen-2017 Iucolano, Ferdinando; Parisi, Antonino; Reina, Santo; Meneghesso, Gaudenzio; Verzellesi, Giovanni; Chini, Alessandro
AlGaN/GaN-Based HEMTs Failure Physics and Reliability: Mechanisms Affecting Gate Edge and Schottky Junction 1-gen-2013 Zanoni, E.; Meneghini, M.; Chini, Alessandro; Marcon, D.; Meneghesso, G.
Alternative Measurement Approach for the Evaluation of Hot-Electron Degradation in p-GaN Gate AlGaN/GaN Power HEMTs 1-gen-2024 Cioni, M.; Giorgino, G.; Chini, A.; Parisi, A.; Cappellini, G.; Miccoli, C.; Castagna, M. E.; Tringali, C.; Iucolano, F.
An Investigation of the Electrical Degradation of GaN High-Electron-Mobility Transistors by Numerical Simulations of DC Characteristics and Scattering Parameters 1-gen-2011 DI LECCE, Valerio; Esposto, Michele; Bonaiuti, Matteo; Fantini, Fausto; Meneghesso, G.; Zanoni, E.; Chini, Alessandro
Analysis of DC and rf degradation of AlGaN/GaN High Electron Mobility Transistors based on pulsed measurements and spectroscopic techniques 1-gen-2010 Zanoni, E.; Chini, Alessandro; Stocco, A.; Rossetto, I.; Meneghini, M.; Rampazzo, F.; Ronchi, N.; Tazzoli, A.; Verzellesi, Giovanni; Meneghesso, G.
Analysis of GaN HEMT Failure Mechanisms During DC and Large-Signal RF Operation 1-gen-2012 Chini, Alessandro; DI LECCE, Valerio; Fantini, Fausto; Meneghesso, G.; Zanoni, E.
Analysis of High-Electric-Field Degradation in AlGaN/GaN HEMTs 1-gen-2007 Faqir, Mustapha; Chini, Alessandro; Verzellesi, Giovanni; Fantini, Fausto; Rampazzo, F.; Meneghesso, G.; Zanoni, E.; Kordos, P.
Analysis of self-oscillating switched-mode circuit for low-voltage energy harvesting 1-gen-2013 Chini, Alessandro
Analytical Model for Power Switching GaN-Based HEMT Design 1-gen-2011 Esposto, Michele; Chini, Alessandro; Rajan, S.
Boost-converter-based solar harvester for low power applications 1-gen-2010 Chini, Alessandro; Soci, F.
Buffer traps in Fe-doped AlGaN/GaN HEMTs: Investigation of the physical properties based on pulsed and transient measurements 1-gen-2014 Meneghini, M.; Rossetto, I.; Bisi, D.; Stocco, A; Chini, Alessandro; Pantellini, A.; Lanzieri, C.; Nanni, A.; Meneghesso, G.; Zanoni, E.
Characterization and Numerical Simulations of High Power Field-Plated pHEMTs 1-gen-2008 Chini, Alessandro; Esposto, Michele; Verzellesi, Giovanni; S., Lavanga; C., Lanzieri; A., Cetronio