statistiche ricercatore

Continente	#
NA - Nord America	1.472
AS - Asia	695
EU - Europa	538
SA - Sud America	68
AF - Africa	10
Continente sconosciuto - Info sul continente non disponibili	1
Totale	2.784

Nazione	#
US - Stati Uniti d'America	1.450
CN - Cina	222
GB - Regno Unito	211
SG - Singapore	210
SE - Svezia	104
HK - Hong Kong	81
VN - Vietnam	60
BR - Brasile	50
DE - Germania	50
TR - Turchia	37
UA - Ucraina	35
IT - Italia	33
KR - Corea	32
FI - Finlandia	26
RU - Federazione Russa	24
FR - Francia	18
BG - Bulgaria	13
CA - Canada	12
IN - India	11
JP - Giappone	10
AR - Argentina	9
BD - Bangladesh	8
NL - Olanda	7
PL - Polonia	6
IQ - Iraq	4
MX - Messico	4
PK - Pakistan	4
CO - Colombia	3
ZA - Sudafrica	3
AT - Austria	2
AZ - Azerbaigian	2
EC - Ecuador	2
ES - Italia	2
LK - Sri Lanka	2
LT - Lituania	2
MA - Marocco	2
NP - Nepal	2
OM - Oman	2
PA - Panama	2
TN - Tunisia	2
AM - Armenia	1
AO - Angola	1
BE - Belgio	1
CH - Svizzera	1
CR - Costa Rica	1
CU - Cuba	1
CY - Cipro	1
EG - Egitto	1
GE - Georgia	1
GT - Guatemala	1
HN - Honduras	1
IE - Irlanda	1
IL - Israele	1
KE - Kenya	1
KG - Kirghizistan	1
LA - Repubblica Popolare Democratica del Laos	1
LU - Lussemburgo	1
MY - Malesia	1
PE - Perù	1
PT - Portogallo	1
PY - Paraguay	1
SA - Arabia Saudita	1
TW - Taiwan	1
UY - Uruguay	1
VE - Venezuela	1
Totale	2.784

Nome	#
Light sensitivity of current DLTS and its implications on the physics of DC-to-RF dispersion in AlGaAs-GaAs HFETs	308
Hot-electron-stress degradation in unpassivated GaN/AlGaN/GaN HEMTs on SiC	263
Impact of temperature on surface-trap-induced gate-lag effects in GaAs heterostructure FETs	255
Experimental and numerical assessment of gate-lag phenomena in AlGaAs-GaAs heterostructure field-effect transistors (FETs)	253
Energetic and spatial localisation of deep-level traps responsible for DC-to-RF dispersion effects in AlGaAs-GaAs HFETs	242
Origin of hole-like peaks in current deep level transient spectroscopy of n-channel AlGaAs/GaAs heterostructure field-effect transistors	241
Experimental and numerical analysis of gate- and drain-lag phenomena in AlGaAs/InGaAs PHEMTs	241
Experimental/numerical investigation of the physical mechanisms behind dc-to-RF dispersion effects in GaAs-based HFET’s	222
The impact of light on current DLTS and gate-lag transients of AlGaAs-GaAs HFETs	220
Experimental and simulated gate lag transients in unpassivated GaN/AlGaN/GaN HEMTs	193
Measurements and simulations of hot-carrier degradation effects in AlGaAs/GaAs HFETs	192
Light sensitivity of gate lag and current DLTS as a tool to investigate the origin of dc-to-RF dispersion effects in GaAs heterostructure FETs	170
Totale	2.800

	Totale	Lug	Ago	Sett	Ott	Nov	Dic	Gen	Feb	Mar	Apr	Mag	Giu
2020/2021	62	0	0	0	0	0	0	0	0	0	35	10	17
2021/2022	212	7	35	14	15	4	17	14	4	16	20	41	25
2022/2023	270	36	40	12	34	12	67	4	22	21	4	6	12
2023/2024	108	7	5	5	18	23	5	5	22	1	1	1	15
2024/2025	541	31	2	5	44	99	79	39	37	44	10	82	69
2025/2026	629	45	62	49	72	102	61	67	26	103	42	0	0
Totale													2.800