BASILE, Alberto Francesco
 Distribuzione geografica
Continente #
NA - Nord America 1.067
EU - Europa 413
AS - Asia 118
Totale 1.598
Nazione #
US - Stati Uniti d'America 1.066
GB - Regno Unito 183
SE - Svezia 97
CN - Cina 49
DE - Germania 40
TR - Turchia 35
UA - Ucraina 31
HK - Hong Kong 24
IT - Italia 19
FI - Finlandia 13
BG - Bulgaria 12
RU - Federazione Russa 7
JP - Giappone 4
FR - Francia 3
AT - Austria 2
KR - Corea 2
NL - Olanda 2
BE - Belgio 1
CA - Canada 1
CH - Svizzera 1
IE - Irlanda 1
IL - Israele 1
IN - India 1
PL - Polonia 1
SG - Singapore 1
TW - Taiwan 1
Totale 1.598
Città #
Fairfield 162
Southend 141
Chandler 121
Woodbridge 110
Houston 109
Ashburn 88
Jacksonville 70
Seattle 53
Dearborn 51
Nyköping 48
Cambridge 47
Wilmington 42
Izmir 26
Ann Arbor 24
Hong Kong 24
Beijing 22
Des Moines 22
Eugene 12
Grafing 12
Princeton 12
San Diego 12
Sofia 12
Redwood City 8
Boardman 3
Kunming 3
London 3
Nanjing 3
New York 3
Tokyo 3
Acton 2
Bologna 2
Chicago 2
Chiswick 2
Guangzhou 2
Hounslow 2
La Spezia 2
Los Angeles 2
Modena 2
Moscow 2
Norwalk 2
Vienna 2
Berkeley 1
Brussels 1
Castelfranco Emilia 1
Changchun 1
Chengdu 1
Dongguan 1
Dublin 1
Fukui 1
Gatchina 1
Hefei 1
Helsinki 1
Huzhou 1
Jerusalem 1
Jinhua 1
Kilburn 1
Lausanne 1
Nanchang 1
Orlando 1
Padova 1
Perm 1
Prescot 1
Shenyang 1
Tolentino 1
Toronto 1
Verona 1
Wuhan 1
Totale 1.296
Nome #
Light sensitivity of current DLTS and its implications on the physics of DC-to-RF dispersion in AlGaAs-GaAs HFETs 194
Hot-electron-stress degradation in unpassivated GaN/AlGaN/GaN HEMTs on SiC 177
Impact of temperature on surface-trap-induced gate-lag effects in GaAs heterostructure FETs 146
The impact of light on current DLTS and gate-lag transients of AlGaAs-GaAs HFETs 145
Experimental/numerical investigation of the physical mechanisms behind dc-to-RF dispersion effects in GaAs-based HFET’s 138
Experimental and numerical assessment of gate-lag phenomena in AlGaAs-GaAs heterostructure field-effect transistors (FETs) 136
Experimental and numerical analysis of gate- and drain-lag phenomena in AlGaAs/InGaAs PHEMTs 134
Origin of hole-like peaks in current deep level transient spectroscopy of n-channel AlGaAs/GaAs heterostructure field-effect transistors 131
Energetic and spatial localisation of deep-level traps responsible for DC-to-RF dispersion effects in AlGaAs-GaAs HFETs 129
Measurements and simulations of hot-carrier degradation effects in AlGaAs/GaAs HFETs 99
Experimental and simulated gate lag transients in unpassivated GaN/AlGaN/GaN HEMTs 97
Light sensitivity of gate lag and current DLTS as a tool to investigate the origin of dc-to-RF dispersion effects in GaAs heterostructure FETs 88
Totale 1.614
Categoria #
all - tutte 5.404
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 5.404


Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2018/2019125 0 0 0 0 0 0 0 0 0 0 65 60
2019/2020414 27 33 15 39 38 51 70 33 44 22 16 26
2020/2021264 28 8 19 27 30 13 25 26 26 35 10 17
2021/2022212 7 35 14 15 4 17 14 4 16 20 41 25
2022/2023270 36 40 12 34 12 67 4 22 21 4 6 12
2023/202492 7 5 5 18 23 5 5 22 1 1 0 0
Totale 1.614