statistiche ricercatore

Continente	#
NA - Nord America	1.394
AS - Asia	583
EU - Europa	510
SA - Sud America	53
AF - Africa	4
Continente sconosciuto - Info sul continente non disponibili	1
Totale	2.545

Nazione	#
US - Stati Uniti d'America	1.380
CN - Cina	216
GB - Regno Unito	210
SG - Singapore	176
SE - Svezia	104
HK - Hong Kong	77
DE - Germania	47
BR - Brasile	44
TR - Turchia	37
UA - Ucraina	34
IT - Italia	31
VN - Vietnam	29
KR - Corea	26
FI - Finlandia	22
RU - Federazione Russa	22
BG - Bulgaria	13
CA - Canada	8
JP - Giappone	8
FR - Francia	7
AR - Argentina	6
PL - Polonia	6
NL - Olanda	5
BD - Bangladesh	3
IN - India	3
AT - Austria	2
LK - Sri Lanka	2
LT - Lituania	2
PA - Panama	2
ZA - Sudafrica	2
AM - Armenia	1
AZ - Azerbaigian	1
BE - Belgio	1
CH - Svizzera	1
CO - Colombia	1
CR - Costa Rica	1
CU - Cuba	1
EC - Ecuador	1
ES - Italia	1
GT - Guatemala	1
IE - Irlanda	1
IL - Israele	1
KE - Kenya	1
KG - Kirghizistan	1
LA - Repubblica Popolare Democratica del Laos	1
LU - Lussemburgo	1
MA - Marocco	1
MX - Messico	1
PK - Pakistan	1
PY - Paraguay	1
TW - Taiwan	1
Totale	2.545

Nome	#
Light sensitivity of current DLTS and its implications on the physics of DC-to-RF dispersion in AlGaAs-GaAs HFETs	290
Hot-electron-stress degradation in unpassivated GaN/AlGaN/GaN HEMTs on SiC	248
Impact of temperature on surface-trap-induced gate-lag effects in GaAs heterostructure FETs	233
Experimental and numerical assessment of gate-lag phenomena in AlGaAs-GaAs heterostructure field-effect transistors (FETs)	224
Experimental and numerical analysis of gate- and drain-lag phenomena in AlGaAs/InGaAs PHEMTs	221
Energetic and spatial localisation of deep-level traps responsible for DC-to-RF dispersion effects in AlGaAs-GaAs HFETs	219
Origin of hole-like peaks in current deep level transient spectroscopy of n-channel AlGaAs/GaAs heterostructure field-effect transistors	212
Experimental/numerical investigation of the physical mechanisms behind dc-to-RF dispersion effects in GaAs-based HFET’s	207
The impact of light on current DLTS and gate-lag transients of AlGaAs-GaAs HFETs	205
Experimental and simulated gate lag transients in unpassivated GaN/AlGaN/GaN HEMTs	176
Measurements and simulations of hot-carrier degradation effects in AlGaAs/GaAs HFETs	175
Light sensitivity of gate lag and current DLTS as a tool to investigate the origin of dc-to-RF dispersion effects in GaAs heterostructure FETs	151
Totale	2.561

	Totale	Lug	Ago	Sett	Ott	Nov	Dic	Gen	Feb	Mar	Apr	Mag	Giu
2020/2021	152	0	0	0	0	0	13	25	26	26	35	10	17
2021/2022	212	7	35	14	15	4	17	14	4	16	20	41	25
2022/2023	270	36	40	12	34	12	67	4	22	21	4	6	12
2023/2024	108	7	5	5	18	23	5	5	22	1	1	1	15
2024/2025	541	31	2	5	44	99	79	39	37	44	10	82	69
2025/2026	390	45	62	49	72	102	60	0	0	0	0	0	0
Totale													2.561