Unpassivated GaN/AlGaN/GaN HEMTs on SiC substrate both with intentionally undoped and doped structures with an extremely weak current collapse in the 50ns range have been presented. The characterization with gate-lag techniques did not shown relevant DC to RF dispersion and preliminary RF output power measurements lead to expect good RF performances.
Experimental and simulated gate lag transients in unpassivated GaN/AlGaN/GaN HEMTs / R., Pierobon; F., Rampazzo; G., Meneghesso; E., Zanoni; J., Bernat; M., Marso; P., Kordos; Basile, Alberto Francesco; Verzellesi, Giovanni. - STAMPA. - (2004). (Intervento presentato al convegno European Workshop on Heterostructure Technology tenutosi a Koutouloufari (Crete, Greece) nel Oct. 2004).
Experimental and simulated gate lag transients in unpassivated GaN/AlGaN/GaN HEMTs
BASILE, Alberto Francesco;VERZELLESI, Giovanni
2004
Abstract
Unpassivated GaN/AlGaN/GaN HEMTs on SiC substrate both with intentionally undoped and doped structures with an extremely weak current collapse in the 50ns range have been presented. The characterization with gate-lag techniques did not shown relevant DC to RF dispersion and preliminary RF output power measurements lead to expect good RF performances.
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